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    Electricaly erasable and programmable read only memory with a discharge device
    3.
    发明授权
    Electricaly erasable and programmable read only memory with a discharge device 失效
    电解可编程只读存储器与放电器件

    公开(公告)号：US5138575A

    公开(公告)日：1992-08-11

    申请号：US448470

    申请日：1989-12-11

    申请人： Taiji Ema ,  Masahiro Nakahara

    发明人： Taiji Ema ,  Masahiro Nakahara

    IPC分类号： G11C16/04 ,  G11C16/28

    CPC分类号： G11C16/28 ,  G11C16/0433

    摘要： An electrically erasable and programmable read only memory includes a memory cell array having a plurality of memory cells coupled to bit lines and word lines. Each of the memory cells includes a select transistor controlled by one of the word lines, a memory transistor of the enhancement type coupled to one of the bit lines through the select transistor and having a control gate, and a drive transistor having a gate coupled to the one of the word lines and applying a control gate voltage supplied through a program line to the control gate of the memory transistor. Further, the electrically erasable and programmable read only memory includes a select device for selecting at least one of the bit lines and one of the word lines on the basis of an address supplied from an external device, and a sense amplifier for outputting data stored in the memory cell array. Also provided is a discharging device which discharges the drain regions and the control gates of the memory transistors after a predetermined time has passed from a transition of the address and application of the control gate voltage.

    Surface discharge plasma display panel
    5.
    发明授权
    Surface discharge plasma display panel 失效
    表面放电等离子体显示面板

    公开(公告)号：US06531819B1

    公开(公告)日：2003-03-11

    申请号：US09481324

    申请日：2000-01-11

    申请人： Masahiro Nakahara ,  Yoshikazu Kanazawa ,  Ryuji Tazume ,  Shinichi Nomura ,  Mitsuhiro Moriyama ,  Yukinori Miyazaki

    发明人： Masahiro Nakahara ,  Yoshikazu Kanazawa ,  Ryuji Tazume ,  Shinichi Nomura ,  Mitsuhiro Moriyama ,  Yukinori Miyazaki

    IPC分类号： H01J1749

    CPC分类号： H01J11/12 ,  H01J11/24 ,  H01J11/28 ,  H01J2211/245

    摘要： A plasma display panel of a surface discharge type is disclosed, which can positively generate the discharge for display while suppressing the power consumption even when the number of the electrodes is increased for attaining the high definition. A plurality of display electrode pairs are arranged in proximity with each other inside of a pair of substrates opposed to each other with a discharge gap formed therebetween. Each display electrode includes a main pattern extending in one direction, independent discharge patterns each formed for each luminous area corresponding to a display cell, and a plurality of auxiliary patterns for electrically connecting the main pattern and the discharge patterns to each other. The auxiliary patterns are higher in conductivity than the discharge patterns.

    摘要翻译： 公开了一种表面放电型的等离子体显示面板，即使增加电极的数量以达到高清晰度，也能够在抑制功耗的同时积极地产生显示放电。 多个显示电极对在彼此相对的一对基板的内部彼此靠近地布置，其间形成有放电间隙。 每个显示电极包括沿一个方向延伸的主图案，对于与显示单元相对应的每个发光区域形成的独立放电图案，以及用于将主图案和放电图案彼此电连接的多个辅助图案。 辅助图案的电导率高于放电图案。

    Ceramic member for semiconductor manufacturing equipment
    6.
    发明授权
    Ceramic member for semiconductor manufacturing equipment 有权
    半导体制造设备用陶瓷件

    公开(公告)号：US07022636B2

    公开(公告)日：2006-04-04

    申请号：US10263460

    申请日：2002-10-02

    申请人： Toshiyuki Hamada ,  Masahiro Nakahara

    发明人： Toshiyuki Hamada ,  Masahiro Nakahara

    IPC分类号： C04B35/505 ,  C04B35/111

    CPC分类号： C04B35/117 ,  C04B35/44 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/658 ,  C04B2235/72 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692

    摘要： There is provided a ceramic member for semiconductor manufacturing equipment which is formed of an alumina-based sinter containing an yttrium-aluminum-garnet at the amount of 3 to 50 wt %, silicon oxide at the amount of not more than 0.2 wt %, preferably 0.1 wt %, and the balance substantially alumina, wherein the sinter has dielectric loss of not more than 4×10−4 particularly 2.5×10−4 or less in the frequency range of 10 MHz to 5 GHz. Such a member may be formed of a ceramic sinter including an aluminum phase having mean crystal grain size in a range of 2 to 10 μm and a yttrium-aluminum-garnet phase having a mean crystal grain size in a range of 1.5 to 5 μm, wherein the ratio of the mean crystal grain size of the alumina phase to that of the yttrium-aluminum-garnet phase is larger than 1 and smaller than 7.

    摘要翻译： 提供了一种用于半导体制造设备的陶瓷构件，其由含有3至50重量％的钇铝石榴石的氧化铝基烧结体形成，氧化硅的量不超过0.2重量％ 0.1重量％，余量基本上为氧化铝，其中烧结体在10的频率范围内的介电损耗不大于4×10 -4，特别是2.5×10 -4 -4以下 MHz至5 GHz。 这种构件可以由包括平均晶粒尺寸在2至10μm的铝相和具有1.5至5μm的平均晶粒尺寸的钇铝 - 石榴石相的铝相的陶瓷烧结体形成， 其中氧化铝相的平均结晶粒径与钇 - 铝 - 石榴石相的平均晶粒尺寸比大于1且小于7。

    Ceramic member resistant to halogen-plasma corrosion
    9.
    发明授权
    Ceramic member resistant to halogen-plasma corrosion 失效
    陶瓷构件耐卤素等离子体腐蚀

    公开(公告)号：US06383964B1

    公开(公告)日：2002-05-07

    申请号：US09450162

    申请日：1999-11-29

    申请人： Masahiro Nakahara ,  Yumiko Itoh

    发明人： Masahiro Nakahara ,  Yumiko Itoh

    IPC分类号： C04B35505

    CPC分类号： C04B35/18 ,  C04B35/117

    摘要： The present invention is to provide ceramic members for being used as members constituting a processing chamber for etching or cleaning semiconductor substrates or wafers by halogen plasma. A ceramic member includes at least 10% by volume of a compound of yttrium-aluminum-garnet (YAG) phase and not more than 90% by volume of at least an oxide phase selected from aluminum oxide, yttrium oxide and aluminum nitride. Particularly, the ceramic member contains yttrium within a range of 35 to 80 mole % in terms of yttrium oxide Y2O3 and aluminum within a range of 20 to 65 mole % in terms of aluminum oxide Al2O3 to form a mixture of YAG phase with yttria phase, producing ceramic material having high corrosion resistance to halogenous gas and its plasma. Such ceramic material may be well applicable to members to be exposed by the halogen plasma, for example, a chamber wall, a wafer stage, a clamp ring, a shower head, which are used in systems for etching and cleaning semiconductor wafers. A ceramic member of the invention can also be composed of YAG and alumina or aluminum nitride, showing high thermal conductivity enough to prevent a deposit of the reaction products of halide over the whole members in the chamber by external heating.

    摘要翻译： 本发明提供陶瓷构件，用作构成用于通过卤素等离子体蚀刻或清洗半导体衬底或晶片的处理室的构件。 陶瓷构件包括至少10体积％的钇 - 铝 - 石榴石（YAG）相的化合物和不大于90体积％的至少一种选自氧化铝，氧化钇和氮化铝的氧化物相。 特别地，陶瓷构件以氧化钇Y 2 O 3换算为35〜80摩尔％的范围，铝氧化铝为20〜65摩尔％的铝，形成YAG相与氧化钇相的混合物， 生产对卤素气体及其等离子体具有高耐腐蚀性的陶瓷材料。 这种陶瓷材料可以很好地应用于被卤素等离子体暴露的构件，例如用于蚀刻和清洁半导体晶片的系统中的室壁，晶片台，夹紧环，淋浴头。 本发明的陶瓷构件也可以由YAG和氧化铝或氮化铝组成，显示出高的导热性，足以防止卤化物的反应产物通过外部加热沉积在室中的整个构件上。