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    Polishing Liquid for Cmp Process and Polishing Method
    1.
    发明申请
    Polishing Liquid for Cmp Process and Polishing Method 审中-公开
    抛光液用于Cmp工艺和抛光方法

    公开(公告)号：US20070269987A1

    公开(公告)日：2007-11-22

    申请号：US10552606

    申请日：2004-05-07

    申请人： Tomoharu Nakano ,  Fumihiro Nakajima ,  Tadakazu Miyazaki ,  Duncan Brown ,  Matthew Healy

    发明人： Tomoharu Nakano ,  Fumihiro Nakajima ,  Tadakazu Miyazaki ,  Duncan Brown ,  Matthew Healy

    IPC分类号： H01L21/321

    CPC分类号： C09G1/02 ,  H01L21/31053

    摘要： An abrasive liquid for CMP process characterized by comprising an abrasive material, an aqueous solvent and an addition agent, and containing abrasive particles having a particle diameter of 20 to 80 nm by 15 weight % or more on the basis of the weight of the abrasive liquid; and a method of polishing by using the abrasive liquid are appropriate for the processing of flattening the surface of a device wafer on which at least a silicon oxide film is formed, and take effect of being capable of stably performing superior abrasive properties such as flattening properties, low flaw properties and high washing properties, and then are the most appropriate for the processing of flattening the surface of a semiconductor device comprising a layer insulation film or an element separation film, a magnetic head and a substrate for a liquid crystal display in the semiconductor industry.

    摘要翻译： 一种用于CMP工艺的磨料液体，其特征在于包括研磨材料，水性溶剂和添加剂，并且基于研磨液的重量，包含粒径为20至80nm至15重量％或更多的磨料颗粒 ; 并且通过使用研磨液的研磨方法适用于对至少形成有氧化硅膜的器件晶片的表面进行平坦化处理，并且能够稳定地进行优异的研磨性能如扁平化性能 低缺陷特性和高洗涤性，最适合用于对包含层间绝缘膜或元件分离膜，磁头和液晶显示器用基板的半导体器件的表面进行平坦化处理 半导体行业。