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    Silicon source reagent compositions, and method of making and using same for microelectronic device structure
    4.
    发明申请
    Silicon source reagent compositions, and method of making and using same for microelectronic device structure 审中-公开
    硅源试剂组合物，以及制造和使用它们用于微电子器件结构的方法

    公开(公告)号：US20060148271A1

    公开(公告)日：2006-07-06

    申请号：US11363904

    申请日：2006-02-28

    申请人： Alexander Borovik ,  Ziyun Wang ,  Chongying Xu ,  Thomas Baum ,  Brian Benac ,  Bryan Hendrix ,  Jeffrey Roeder

    发明人： Alexander Borovik ,  Ziyun Wang ,  Chongying Xu ,  Thomas Baum ,  Brian Benac ,  Bryan Hendrix ,  Jeffrey Roeder

    IPC分类号： H01L21/469

    CPC分类号： H01L21/28185 ,  C07F7/003 ,  C07F7/025 ,  C07F7/10 ,  C23C14/08 ,  C23C14/083 ,  C23C16/401 ,  C23C16/405 ,  H01L21/02142 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/3125 ,  H01L21/31604 ,  H01L21/3185 ,  H01L29/517 ,  H01L29/518

    摘要： A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4−x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity. Also described is a method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 ppm halogen.

    摘要翻译： 一种使用式M（NR 1，R 2）2 x的金属茂化合物在基片上形成栅极电介质薄膜的CVD方法，其中M 选自Zr，Hf，Y，La，镧系元素，Ta，Ti，Al; N是氮; R 1和R 2各自相同或不同，并且独立地选自H，芳基，全氟芳基，C 1 -C 8烷基，C 1 全氟烷基，烷基甲硅烷基，x是金属M上的氧化态; 和式H x Si（NR 1，R 2）4-x N的氨基硅烷化合物，其中H 是氢; x为0〜3; 硅是硅; N是氮; R 1和R 2各自相同或不同，并且独立地选自H，芳基，全氟芳基，C 1 -C 8烷基和C 1 -C 8烷基， C 1 -C 8全氟烷基。 与标准的SiO 2栅极电介质材料相比，这些栅极电介质材料提供低水平的碳和卤化物杂质。 还描述了通过氨基硅烷前体化合物与胺源试剂化合物在包含至少一种活化溶剂组分的溶剂介质中反应合成氨基硅烷源试剂组合物的方法，得到具有小于1000ppm卤素的氨基硅烷源试剂组合物 。

    Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
    7.
    发明申请
    Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing 有权
    半导体制造中阻挡材料的MOCVD的前体组成和工艺

    公开(公告)号：US20050042888A1

    公开(公告)日：2005-02-24

    申请号：US10643110

    申请日：2003-08-18

    申请人： Jeffrey Roeder ,  Chongying Xu ,  Bryan Hendrix ,  Thomas Baum

    发明人： Jeffrey Roeder ,  Chongying Xu ,  Bryan Hendrix ,  Thomas Baum

    IPC分类号： B05D3/02 ,  C07F7/10 ,  C07F9/00 ,  C07F11/00 ,  C23C16/34 ,  H01L21/285 ,  H01L21/31 ,  H01L21/469 ,  H01L21/768

    CPC分类号： C23C16/45553 ,  C07F7/10 ,  C07F9/005 ,  C07F11/005 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76841

    摘要： Metalorganic precursors of the formula: (R1R2N)a-bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a-1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1-C4 alkyl, C3-C6 cycloalkyl, and RO3Si, where each R0 can be the same or different and each R0 is independently selected from H and C1-C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).

    摘要翻译： 下式的金属有机前体：（R1R2N）a-bMXb其中：M是前体金属中心，选自Ta，Ti，W，Nb，Si，Al和B; a是等于M的化合价数; 1 <= b <=（A-1）; R 1和R 2可以彼此相同或不同，并且各自独立地选自H，C 1 -C 4烷基，C 3 -C 6环烷基和R 3 Si，其中每个R 0可以是 相同或不同，每个R 0独立地选自H和C 1 -C 4烷基; X选自氯，氟，溴和碘。 这种配方的前体可用于制造微电子器件结构中的导电阻挡材料的化学气相沉积（MOCVD），例如通过在含有氮的表面官能团的基底上的原子层化学气相沉积。 进一步描述了在低温下，例如使用原子层化学气相沉积（ALCVD）在衬底上形成Si 3 N 4的方法。