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    Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
    3.
    发明申请
    Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations 审中-公开
    使用致密流体/化学配方去除图案化硅/二氧化硅上的颗粒污染

    公开(公告)号：US20060019850A1

    公开(公告)日：2006-01-26

    申请号：US11224214

    申请日：2005-09-12

    申请人： Michael Korzenski ,  Chongying Xu ,  Thomas Baum

    发明人： Michael Korzenski ,  Chongying Xu ,  Thomas Baum

    IPC分类号： C11D7/32

    CPC分类号： C11D1/004 ,  B08B7/0021 ,  C11D1/83 ,  C11D3/042 ,  C11D3/046 ,  C11D3/201 ,  C11D3/2034 ,  C11D3/24 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02101

    摘要： A cleaning composition for cleaning particulate contamination from small dimensions on microelectronic device substrates. The cleaning composition contains dense CO2 (preferably supercritical CO2 (SCCO2)), alcohol, fluoride source, anionic surfactant source, non-ionic surfactant source, and optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the microelectronic device substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

    摘要翻译： 一种用于从微电子器件基底上的小尺寸清洁颗粒污染物的清洁组合物。 清洁组合物含有致密的CO 2（优选超临界CO 2（SCCO 2 2）），醇，氟化物源，阴离子表面活性剂源， 离子表面活性剂源和任选的羟基添加剂。 这种清洁组合物克服了作为清洁试剂的SCCO 2 N的固有缺陷，即SCCO 2的非极性特征，并且其不溶于物质如无机物 盐和极性有机化合物，其存在于晶片衬底上的颗粒污染中，并且必须从微电子器件衬底移除以进行有效的清洁。 清洁组合物能够对Si / SiO 2基体上具有颗粒污染物的基材进行无损伤，无残留的清洗。

    Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
    4.
    发明申请
    Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal 审中-公开
    超临界二氧化碳/化学制剂用于灰化和未镀铝的蚀刻后残留物去除

    公开(公告)号：US20060073998A1

    公开(公告)日：2006-04-06

    申请号：US11273637

    申请日：2005-11-14

    申请人： Michael Korzenski ,  Eliodor Ghenciu ,  Chongying Xu ,  Thomas Baum

    发明人： Michael Korzenski ,  Eliodor Ghenciu ,  Chongying Xu ,  Thomas Baum

    IPC分类号： C23G1/00 ,  C11D7/32

    CPC分类号： H01L21/02071 ,  C11D7/08 ,  C11D7/10 ,  C11D7/261 ,  C11D7/264 ,  C11D7/265 ,  C11D7/28 ,  C11D7/32 ,  C11D7/3245 ,  C11D7/50 ,  C11D7/5022 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/32138

    摘要： A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

    摘要翻译： 蚀刻后残留物清洁组合物，用于从半导体衬底上的小尺寸清洁灰化或未沉淀的铝/ SiN / Si后蚀刻残留物。 清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源，铝离子络合剂和任选的缓蚀剂。 这样的清洁组合物克服了SCCO2作为清洗剂的固有缺陷，即SCCO2的非极性特征及其与溶解残留物中存在的物质如无机盐和极性有机化合物无关，并且与SCCO2的非极性相关 必须从半导体衬底去除以进行有效的清洁。 清洁组合物能够对其上具有灰化或未镀铝/ SiN / Si蚀刻后残留物的基材进行无损伤，无残留的清洁。

    REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS
    6.
    发明申请
    REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS 有权
    使用超临界流体/化学配方去除MEMS功能层

    公开(公告)号：US20070111533A1

    公开(公告)日：2007-05-17

    申请号：US11620902

    申请日：2007-01-08

    申请人： Michael Korzenski ,  Thomas Baum ,  Chongying Xu ,  Eliodor Ghenciu

    发明人： Michael Korzenski ,  Thomas Baum ,  Chongying Xu ,  Eliodor Ghenciu

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02101 ,  B81C1/00476 ,  H01L21/31105 ,  H01L21/32131

    摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

    摘要翻译： 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。

    Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
    7.
    发明申请
    Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 失效
    使用超临界流体/化学配方去除MEMS牺牲层

    公开(公告)号：US20050118813A1

    公开(公告)日：2005-06-02

    申请号：US10782355

    申请日：2004-02-19

    申请人： Michael Korzenski ,  Thomas Baum ,  Chongying Xu ,  Eliodor Ghenciu

    发明人： Michael Korzenski ,  Thomas Baum ,  Chongying Xu ,  Eliodor Ghenciu

    IPC分类号： B08B7/00 ,  B81B3/00 ,  H01L21/306 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： B81C1/00936 ,  B08B7/0021 ,  B81C2201/0108 ,  B81C2201/117 ,  H01L21/02063

    摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

    摘要翻译： 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。

    Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
    8.
    发明申请
    Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products 审中-公开
    用于在制造集成电路产品期间干燥图案化晶片的组合物和方法

    公开(公告)号：US20060065294A1

    公开(公告)日：2006-03-30

    申请号：US11272165

    申请日：2005-11-10

    申请人： Chongying Xu ,  Michael Korzenski ,  Thomas Baum ,  Alexander Borovik ,  Eliodor Ghenciu

    发明人： Chongying Xu ,  Michael Korzenski ,  Thomas Baum ,  Alexander Borovik ,  Eliodor Ghenciu

    IPC分类号： B08B3/00

    CPC分类号： H01L21/02101

    摘要： Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

    摘要翻译： 图案化晶片的干燥以实现从图案化晶片去除水而不会使其图案结构塌陷或劣化的方式实现。 干燥是在本发明的一个方面进行的，其中含有超临界流体的组合物和至少一种与水发生化学反应以形成比水更可溶于超临界流体的反应产物的水反应剂。 描述了使用超临界流体干燥图案化晶片的各种方法，其避免超临界流体（例如超临界CO 2）的（低水溶性）缺陷。

    Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
    10.
    发明申请
    Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate 有权
    用于蚀刻后去除沉积在基底上的光致抗蚀剂和/或牺牲抗反射材料的组合物和方法

    公开(公告)号：US20050197265A1

    公开(公告)日：2005-09-08

    申请号：US10792038

    申请日：2004-03-03

    申请人： Melissa Rath ,  David Bernhard ,  David Minsek ,  Michael Korzenski ,  Thomas Baum

    发明人： Melissa Rath ,  David Bernhard ,  David Minsek ,  Michael Korzenski ,  Thomas Baum

    IPC分类号： A61K31/44 ,  C11D1/62 ,  G03F7/32

    CPC分类号： C11D3/044 ,  C11D3/30 ,  C11D3/3947 ,  C11D7/06 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425

    摘要： A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

    摘要翻译： 用于从其上具有这种材料的基材去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的组合物和方法。 组合物包括碱性组分，例如与碱金属或碱土金属碱组合的季铵碱，或与氧化剂组合的强碱。 该组合物可以在水性介质中使用，例如与螯合剂，表面活性剂和/或共溶剂物质一起使用，以在集成电路的制造中实现高效去除光致抗蚀剂和/或SARC材料，而不会对金属物质产生不利影响 在基底上，例如铜，铝和/或钴合金，并且不损坏在半导体结构中使用的SiOC基电介质材料。