摘要:
A semiconductor integrated circuit device capable of securely preventing the output from becoming indefinite even when power is turned ON or OFF or even in a transient state in which the power voltage varies abruptly. In the semiconductor integrated circuit device, a protection circuit compares the power voltage from a first power supply terminal with a reference voltage, detects power ON, power OFF and abrupt power voltage variation, and outputs a reset command signal so that the output at the output terminal has a high impedance at the time of power ON, power OFF and abrupt power voltage variation.
摘要:
On a semiconductor chip in a semiconductor integrated circuit, a plurality of circuit cells each of which has a pad are formed along a first chip side of the semiconductor chip. Among the plurality of circuit cells, one or more circuit cells at least in the vicinity of an end portion on the first chip side are arranged having a steplike shift in a direction apart from the first chip side with decreasing distance from the center portion to the end portion on the first chip side.
摘要:
A driver circuit is provided for preventing generation of a pass-through current in a CMOS output unit even if a power supply voltage VDD supplied from a low voltage power supply drops below a recommended operating power supply voltage. The driver circuit includes a level shift unit having PMOS transistors and NMOS transistors, and a CMOS output unit having a PMOS transistor and an NMOS transistor. The source, drain and gate of one PMOS transistor are respectively connected to a high voltage power supply, a first contact and a second contact. The source, drain and gate of a second PMOS transistor are respectively connected to a high voltage power supply, the second contact and the first contact. The source of one NMOS transistor is grounded, the drain thereof is connected to the first contact, and the gate thereof receives a low voltage signal. The source of a second NMOS transistor is grounded, the drain thereof is connected to the second contact, and the gate thereof receives a low voltage signal. In this driver circuit, the driving current of the one PMOS transistor is higher than the driving current of the one NMOS transistor.
摘要:
The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要:
In a semiconductor integrated circuit device of the present invention, temperature increase of a bonding wire can be suppressed even when conductive leads are short-circuited with each other, and reliability of the semiconductor integrated circuit device is improved. The conductive leads of a resin package for supplying a power supply section of a semiconductor integrated circuit chip with power from an external power supply are connected with bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires. Furthermore, the conductive leads connected to a GND for supplying the power supply section of the semiconductor integrated circuit chip with a grounding potential are connected with the bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires.
摘要:
A circuit for generating a ternary signal that receives a binary input-control signal and a binary reset signal and outputs a ternary signal. The circuit includes first to third transistors, each source terminal thereof is respectively connected to the three power supplies, and a sequential circuit that outputs control signals controlling the transistors. The sequential circuit outputs control signals that make the first and the third transistors be switched in a complementary manner in an initial state, and make the second and the third transistors be switched in a state that it is released from the initial state.
摘要:
The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要:
The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.
摘要:
A circuit for generating a ternary signal that receives a binary input-control signal and a binary reset signal and outputs a ternary signal. The circuit includes first to third transistors, each source terminal thereof is respectively connected to the three power supplies, and a sequential circuit that outputs control signals controlling the transistors. The sequential circuit outputs control signals that make the first and the third transistors be switched in a complementary manner in an initial state, and make the second and the third transistors be switched in a state that it is released from the initial state.
摘要:
On a semiconductor chip in a semiconductor integrated circuit, a plurality of circuit cells each of which has a pad are formed along a first chip side of the semiconductor chip. Among the plurality of circuit cells, one or more circuit cells at least in the vicinity of an end portion on the first chip side are arranged having a steplike shift in a direction apart from the first chip side with decreasing distance from the center portion to the end portion on the first chip side.