公开(公告)号：US08411281B2

公开(公告)日：2013-04-02

申请号：US13301988

申请日：2011-11-22

申请人： Tomoki Tanemura ,  Yukihiro Takeuchi ,  Takao Iwaki ,  Megumi Suzuki

发明人： Tomoki Tanemura ,  Yukihiro Takeuchi ,  Takao Iwaki ,  Megumi Suzuki

IPC分类号： G01B9/02

CPC分类号： G01J3/26

摘要： A Fabry-Perot interferometer includes a fixed mirror structure and a movable mirror structure. The fixed mirror structure has a fixed mirror in a spectral region. The movable mirror structure includes a membrane spaced from the fixed mirror structure. The membrane has a movable mirror in the spectral region and multiple springs arranged one inside the other around the spectral region. A spring constant of the inner spring is less than a spring constant of the outer spring. One of the fixed mirror structure and the membrane has multiple electrodes, and the other of the fixed mirror structure and the membrane has at least one electrode that is paired with the electrodes to form opposing electrode pairs arranged one inside the other around the spectral region. The number of the opposing electrode pairs is equal to the number of the springs.

摘要翻译： 法布里 - 珀罗干涉仪包括固定镜结构和可移动镜结构。 固定镜结构在光谱区域具有固定的反射镜。 可移动镜结构包括与固定镜结构间隔开的膜。 膜在光谱区域具有可移动反射镜，并且在光谱区域周围布置有多个弹簧。 内弹簧的弹簧常数小于外弹簧的弹簧常数。 固定镜结构和膜中的一个具有多个电极，固定镜结构和膜中的另一个具有至少一个与电极成对的电极，以在光谱区域周围形成相对的电极对。 相对电极对的数量等于弹簧的数量。

公开(公告)号：US20110227040A1

公开(公告)日：2011-09-22

申请号：US13043842

申请日：2011-03-09

申请人： Takao IWAKI ,  Hiroyuki Wado ,  Yukihiro Takeuchi

发明人： Takao IWAKI ,  Hiroyuki Wado ,  Yukihiro Takeuchi

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： G01K7/226 ,  G01K7/223

摘要： A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with temperature. The quantum well structural part includes a plurality of semiconductor layers made of the elements. The semiconductor layers include a plurality of quantum barrier layers and a quantum well layer disposed between the quantum barrier layers. When the semiconductor substrate has a lattice constant “a,” each of the quantum barrier layers has a lattice constant “b,” and the quantum well layer has a lattice constant “c,” the semiconductor substrate, the quantum barrier layers, and the quantum well layer satisfy a relationship of b

摘要翻译： 温度传感器包括半导体衬底和设置在半导体衬底上的量子阱结构部分。 半导体衬底由多个元件制成。 量子阱结构部分具有随温度变化的电阻值。 量子阱结构部分包括由元件制成的多个半导体层。 半导体层包括多个量子势垒层和设置在量子势垒层之间的量子阱层。 当半导体衬底具有晶格常数“a”时，每个量子势垒层具有晶格常数“b”，并且量子阱层具有晶格常数“c”，半导体衬底，量子势垒层和 量子阱层满足b

公开(公告)号：US06701782B2

公开(公告)日：2004-03-09

申请号：US10199116

申请日：2002-07-22

申请人： Takao Iwaki ,  Toshimasa Yamamoto ,  Hiroyuki Wado ,  Yukihiro Takeuchi

发明人： Takao Iwaki ,  Toshimasa Yamamoto ,  Hiroyuki Wado ,  Yukihiro Takeuchi

IPC分类号： G01F168

CPC分类号： G01F1/692

摘要： A flow sensor, which includes a diaphragm, is made such that the diaphragm is flat or outwardly deformed to allow fluid flow rate measurements at higher flow rates. The diaphragm is made of an upper set of insulating films, electric devices, and a lower set of insulating films. The component layers of the diaphragm are formed such that the average stress in the upper set of insulating films is more compressive than the average stress in the lower set of insulating films.

摘要翻译： 包括隔膜的流量传感器被制成使得隔膜是平坦的或向外变形的，以允许在较高流速下进行流体流速测量。 隔膜由上一组绝缘膜，电气设备和下一组绝缘膜制成。 隔膜的部件层形成为使得上部绝缘膜中的平均应力比下部绝缘膜中的平均应力更大的压缩。

公开(公告)号：US06786089B2

公开(公告)日：2004-09-07

申请号：US10253502

申请日：2002-09-25

申请人： Koichi Goto ,  Yukihiro Takeuchi ,  Takao Iwaki ,  Yasushi Goka

发明人： Koichi Goto ,  Yukihiro Takeuchi ,  Takao Iwaki ,  Yasushi Goka

IPC分类号： G01L168

CPC分类号： G01F15/12 ,  G01F1/6842 ,  G01F5/00

摘要： An airflow meter has a member that defines a bypass passage. The bypass passage has a sensing passage in which a sensor tip is disposed. The sensing passage is restricted in at least a lateral direction that is a direction perpendicular to both a longitudinal direction of the sensing passage and a perpendicular direction perpendicular to the surface of the sensor tip. This arrangement defines relatively wider distance in the perpendicular direction on the sensor tip.

摘要翻译： 气流计具有限定旁路通道的构件。 旁通通道具有传感器尖端设置在其中的感测通道。 感测通道至少沿垂直于感测通道的纵向方向的方向和垂直于传感器尖端表面的垂直方向的横向限制。 这种布置在传感器顶端上沿垂直方向限定相对更宽的距离。

公开(公告)号：US07107846B2

公开(公告)日：2006-09-19

申请号：US11265281

申请日：2005-11-03

申请人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

发明人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

摘要翻译： 电容型加速度传感器包括半导体基板，通过弹簧部分支撑在基板上的重量部分，与重物部分一体化的可动电极以及与该基板悬臂连接的固定电极。 根据加速度，可移动电极与可动电极的相对表面一起移动。 可动电极的相对表面面对固定电极的相对表面，以提供电容器。 电容器的电容根据可动电极的位移而变化，使得外部电路作为电容变化来检测加速度。 可移动和固定电极的每个相对表面具有用于增加电容变化的凹凸部分。

公开(公告)号：US20060194332A1

公开(公告)日：2006-08-31

申请号：US11410093

申请日：2006-04-25

申请人： Hiroyuki Wado ,  Makiko Sugiura ,  Yukihiro Takeuchi ,  Takao Iwaki

发明人： Hiroyuki Wado ,  Makiko Sugiura ,  Yukihiro Takeuchi ,  Takao Iwaki

IPC分类号： G01N33/00

CPC分类号： G01N27/124

摘要： A more reliable gas sensor includes a support film formed on a surface of a substrate and a heater electrode. Surrounding the heater electrode is a heater electrical insulation layer 4. Detection electrodes are formed above the electrical insulation layer. A flat insulating layer is formed over the heater insulation layer, and surfaces of the detection electrodes are exposed and flush with the upper surface of the flat insulating layer. A sensitive film is formed above the flat insulating layer in contact with the surfaces of the detection electrodes. A hollow cavity is formed in the substrate.

摘要翻译： 更可靠的气体传感器包括形成在基板的表面上的支撑膜和加热器电极。 加热器电极周围是加热器电绝缘层4。 检测电极形成在电绝缘层的上方。 在加热器绝缘层之上形成平坦的绝缘层，并且检测电极的表面暴露并与平坦绝缘层的上表面齐平。 敏感膜形成在与检测电极的表面接触的平坦绝缘层的上方。 在基板中形成中空腔。

公开(公告)号：US07004026B2

公开(公告)日：2006-02-28

申请号：US10703461

申请日：2003-11-10

申请人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

发明人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

公开(公告)号：US20060053890A1

公开(公告)日：2006-03-16

申请号：US11265281

申请日：2005-11-03

申请人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

发明人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

公开(公告)号：US20070251915A1

公开(公告)日：2007-11-01

申请号：US11783434

申请日：2007-04-10

申请人： Junji Oohara ,  Hisaya Katoh ,  Toshiyuki Morishita ,  Yukihiro Takeuchi

发明人： Junji Oohara ,  Hisaya Katoh ,  Toshiyuki Morishita ,  Yukihiro Takeuchi

IPC分类号： B29D11/00

CPC分类号： G02B3/06 ,  G02B6/124 ,  G03F7/0005

摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.

摘要翻译： 一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个 的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。 此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。

公开(公告)号：US20050054153A1

公开(公告)日：2005-03-10

申请号：US10936539

申请日：2004-09-09

申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

IPC分类号： B81C1/00 ,  H01L21/306 ,  H01L29/80 ,  H05K3/06

CPC分类号： B81C1/00619 ,  B81C2201/0112

摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。