公开(公告)号：US07998296B2

公开(公告)日：2011-08-16

申请号：US12230238

申请日：2008-08-26

申请人： Tony Ricci ,  Jim Tappan ,  Keith Comendant

发明人： Tony Ricci ,  Jim Tappan ,  Keith Comendant

IPC分类号： B32B37/00

CPC分类号： H01L21/76251 ,  H01L21/68757 ,  H01L21/68785

摘要： A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions the provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.

摘要翻译： 一种保护适于在等离子体处理系统中使用的衬底支撑体中的接合层的方法。 该方法包括以下步骤：用基板材料将基板支撑件的上部构件附接到基板支撑件的下部构件。 粘合剂被施加到上部构件的外周和下部构件的上周边，并且保护环围绕上部构件的外周和下部构件的上周边定位。 保护环最初是以提供机械稳定性和可加工性的尺寸制造的。 然后将保护环加工成与衬底支撑应用的设计一致的最终尺寸的精确组合。

公开(公告)号：US20080314508A1

公开(公告)日：2008-12-25

申请号：US12230238

申请日：2008-08-26

申请人： Tony Ricci ,  Jim Tappan ,  Keith Comendant

发明人： Tony Ricci ,  Jim Tappan ,  Keith Comendant

IPC分类号： B32B38/10

CPC分类号： H01L21/76251 ,  H01L21/68757 ,  H01L21/68785

摘要： A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.

公开(公告)号：US07431788B2

公开(公告)日：2008-10-07

申请号：US11183849

申请日：2005-07-19

申请人： Anthony Ricci ,  Jim Tappan ,  Keith Comendant

发明人： Anthony Ricci ,  Jim Tappan ,  Keith Comendant

IPC分类号： B32B37/00

CPC分类号： H01L21/76251 ,  H01L21/68757 ,  H01L21/68785

摘要： A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.

摘要翻译： 一种保护适于在等离子体处理系统中使用的衬底支撑体中的接合层的方法。 该方法包括以下步骤：用基板材料将基板支撑件的上部构件附接到基板支撑件的下部构件。 粘合剂被施加到上部构件的外周和下部构件的上周边，并且保护环围绕上部构件的外周和下部构件的上周边定位。 保护环最初由具有提供机械稳定性和可加工性的尺寸制成。 然后将保护环加工成与衬底支撑应用的设计一致的最终尺寸的精确组合。

公开(公告)号：US20070131350A1

公开(公告)日：2007-06-14

申请号：US11183849

申请日：2005-07-19

申请人： Anthony Ricci ,  Jim Tappan ,  Keith Comendant

发明人： Anthony Ricci ,  Jim Tappan ,  Keith Comendant

IPC分类号： B32B37/00

CPC分类号： H01L21/76251 ,  H01L21/68757 ,  H01L21/68785

摘要： A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.

摘要翻译： 一种保护适于在等离子体处理系统中使用的衬底支撑体中的接合层的方法。 该方法包括以下步骤：用基板材料将基板支撑件的上部构件附接到基板支撑件的下部构件。 粘合剂被施加到上部构件的外周和下部构件的上周边，并且保护环围绕上部构件的外周和下部构件的上周边定位。 保护环最初由具有提供机械稳定性和可加工性的尺寸制成。 然后将保护环加工成与衬底支撑应用的设计一致的最终尺寸的精确组合。

公开(公告)号：US09318349B2

公开(公告)日：2016-04-19

申请号：US13950040

申请日：2013-07-24

申请人： Leonard J. Sharpless ,  Keith Comendant

发明人： Leonard J. Sharpless ,  Keith Comendant

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/465 ,  H01J37/21 ,  H01J37/32 ,  H01L21/67 ,  C03C15/00 ,  C03C17/00 ,  H01L21/4763

CPC分类号： H01L21/465 ,  C03C15/00 ,  C03C17/001 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/4763 ,  H01L21/67109

摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.

摘要翻译： 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场以产生用于处理衬底的等离子体的感应线圈; 以及联接到所述底部件的优化的顶部件，所述顶部件还构造成用于加热和冷却系统。 其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。

公开(公告)号：US08503151B2

公开(公告)日：2013-08-06

申请号：US12570263

申请日：2009-09-30

申请人： Keith Comendant

发明人： Keith Comendant

IPC分类号： H01H9/30 ,  H01H73/18

CPC分类号： H01L21/67069

摘要： A dielectric arrestor insert for use in a chamber wafer processing system having a gas input line, an arrestor housing and a wafer processing space. The input line is able to provide gas to the arrestor housing. The arrestor housing is able to house the dielectric arrestor insert. The dielectric arrestor insert comprises a gas entry portion, a non-linear channel and a gas exit portion. The gas entry portion is arranged to receive the gas from the input line. The non-linear channel is arranged to deliver the gas from the gas entry portion to the gas exit portion. The gas exit portion is arranged to deliver the gas from the non-linear channel to the wafer processing space.

摘要翻译： 一种用于具有气体输入管线，避雷器壳体和晶片处理空间的室晶片处理系统中的介电抑制器插入件。 输入线能够向避雷器壳体提供气体。 避雷器壳体能够容纳介电避雷器插入物。 介电抑制器插件包括气体入口部分，非线性通道和气体出口部分。 气体入口部分被布置成从输入管线接收气体。 非线性通道布置成将气体从气体入口部分输送到气体出口部分。 气体出口部分布置成将气体从非线性通道输送到晶片处理空间。

公开(公告)号：US20120043022A1

公开(公告)日：2012-02-23

申请号：US12861769

申请日：2010-08-23

申请人： Leonard J. Sharpless ,  Keith Comendant

发明人： Leonard J. Sharpless ,  Keith Comendant

IPC分类号： C23F1/08 ,  C23C16/50

CPC分类号： H01L21/465 ,  C03C15/00 ,  C03C17/001 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/4763 ,  H01L21/67109

摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system. The top piece coupled to the bottom piece and at least partially covered by the cover, the top piece comprising a first shelf, a second shelf, and a wall; the wall being disposed between the first shelf and the second shelf; a cavity being formed between the first shelf and the second shelf, and between the wall and a portion of the cover; the heating and cooling system being disposed inside the cavity; Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the top piece, and the top piece substantially complies with a set of SEMI ergonomic safety standards for a part handled by a single person.

摘要翻译： 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场的感应线圈，以便产生用于处理衬底的等离子体。 等离子体处理系统还包括至少覆盖感应线圈和加热和冷却系统的盖。 所述顶部件联接到所述底部件并且至少部分地被所述盖子覆盖，所述顶部件包括第一搁板，第二搁板和壁; 所述壁布置在所述第一搁架和所述第二搁架之间; 在所述第一搁板和所述第二搁板之间以及所述壁与所述盖的一部分之间形成空腔; 所述加热和冷却系统设置在所述空腔内; 其中，加热和冷却系统通过顶部件基本上与电磁场屏蔽，并且顶部件基本上符合由单个人处理的部件的一组SEMI符合人体工程学的安全标准。

公开(公告)号：US08051556B2

公开(公告)日：2011-11-08

申请号：US12232673

申请日：2008-09-22

申请人： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

发明人： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

IPC分类号： C23C14/50 ,  C23C16/46 ,  H01L21/00

CPC分类号： H01L21/6833 ,  H01J37/32724 ,  H01J2237/20 ,  H01L21/67103 ,  H01L21/6831 ,  H01L2221/683 ,  H05B3/26 ,  Y10T29/49146 ,  Y10T29/53252 ,  Y10T279/23

摘要： An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

摘要翻译： 用于控制基板的温度的装置具有温度控制的基座，加热器，金属板，电介质材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。 该粘合剂层具有机械柔性，并具有设计用于平衡加热器的热能和外部工艺的物理性能，以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。 介电材料层形成静电夹持机构并支撑基板。

公开(公告)号：US07973539B1

公开(公告)日：2011-07-05

申请号：US13030015

申请日：2011-02-17

申请人： Jaehyun Kim ,  Arthur H. Sato ,  Keith Comendant ,  Qing Liu ,  Feiyang Wu

发明人： Jaehyun Kim ,  Arthur H. Sato ,  Keith Comendant ,  Qing Liu ,  Feiyang Wu

IPC分类号： G01R35/00 ,  G01R31/00

CPC分类号： G01R27/2641 ,  G01R27/2694 ,  G01R35/005

摘要： A method is disclosed for calibrating a capacitance of an apparatus for measuring dielectric properties of a part. The apparatus includes an electrically grounded chamber, a lower electrode disposed within the chamber and connected to a radiofrequency (RF) transmission rod, an electrically grounded upper electrode disposed within the chamber above the lower electrode, and a variable capacitor connected to control transmission of RF power through the RF transmission rod to the lower electrode. A method is also disclosed for determining a capacitance of a part through use of the apparatus. A method is also disclosed for determining a dielectric constant of a part through use of the apparatus. A method is also disclosed for determining a loss tangent of a part through use of the apparatus.

摘要翻译： 公开了一种用于校准用于测量零件的介电特性的装置的电容的方法。 该设备包括电接地室，设置在室内的下电极并连接到射频（RF）传输杆，设置在下电极上方的室内的电接地上电极，以及连接到控制RF 通过RF传输杆向下电极供电。 还公开了一种通过使用该装置来确定零件的电容的方法。 还公开了一种通过使用该装置来确定部件的介电常数的方法。 还公开了一种通过使用该装置来确定零件的损耗角正切的方法。

公开(公告)号：US07939784B2

公开(公告)日：2011-05-10

申请号：US12362139

申请日：2009-01-29

申请人： Robert Steger ,  Keith Comendant

发明人： Robert Steger ,  Keith Comendant

IPC分类号： B23K10/00

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  Y10T279/23

摘要： A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

摘要翻译： 调整静电卡盘（ESC）支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度，其中每个部位与给定的电池相关联，从测量中确定任何部分面积的减小 建议每个电池，并根据建议的分数还原从每个电池中的支撑组件表面去除材料，以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性，或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此，热导率调节可以通过包括限定单元结构，确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔，布线，激光加工或砂粒加工可以实现材料去除。