摘要:
A solid-state image sensor of the present invention has optical units separating incident light into a plurality of color lights, each of which separates the incident light into one of the color lights; light receptors corresponding to the color lights, each of which is formed in a semiconductor substrate and converts one of the color lights separated by the optical units; and antireflection films, each of which reduces light reflection on a surface of the light receptor.
摘要:
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要:
An apparatus for controlling pivoting of a forklift rear axle. A hydraulic damper is arranged between a rear axle and a forklift body. The damper includes two oil chambers. The oil chambers are connected to a first passage and a second passage. A two-way switch valve is arranged between the oil chambers. The valve permits the flow of oil between the oil chambers and allows pivoting of the rear axle when opened. The valve restricts the flow of oil between the oil chambers and prohibits pivoting of the rear axle, thereby locking the rear axle when closed. When the rear axle is released from a locked state, the valve repeats a valve cycle, which includes opening and closing the valve, to regulate the amount of fluid that flows between the chambers. The valve is then kept in an opened state. This prevents shock that may be produced by sudden tilting of the body when the rear axle is released from a locked state.
摘要:
A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.