公开(公告)号：US20100279510A1

公开(公告)日：2010-11-04

申请号：US12526471

申请日：2008-02-05

申请人： Toshihisa Nozawa ,  Kotaro Miyatani ,  Toshiyasu Hori ,  Shigekazu Hirose

发明人： Toshihisa Nozawa ,  Kotaro Miyatani ,  Toshiyasu Hori ,  Shigekazu Hirose

IPC分类号： H01L21/3065

CPC分类号： H01L23/53238 ,  H01J37/32091 ,  H01L21/02063 ,  H01L21/02307 ,  H01L21/0273 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76814 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.

摘要翻译： 通过等离子体蚀刻形成在基板上的添加氟的碳膜的蚀刻方法包括：利用含氧处理气体的等离子体蚀刻含氟碳膜的第一步骤，以及蚀刻氟 - 添加碳膜与含氟处理气体的等离子体。

公开(公告)号：US08383519B2

公开(公告)日：2013-02-26

申请号：US12526471

申请日：2008-02-05

申请人： Toshihisa Nozawa ,  Kotaro Miyatani ,  Toshiyasu Hori ,  Shigekazu Hirose

发明人： Toshihisa Nozawa ,  Kotaro Miyatani ,  Toshiyasu Hori ,  Shigekazu Hirose

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L23/53238 ,  H01J37/32091 ,  H01L21/02063 ,  H01L21/02307 ,  H01L21/0273 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76814 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.

摘要翻译： 通过等离子体蚀刻形成在基板上的添加氟的碳膜的蚀刻方法包括：利用含氧处理气体的等离子体蚀刻含氟碳膜的第一步骤，以及蚀刻氟 - 添加碳膜与含氟处理气体的等离子体。

公开(公告)号：US09117764B2

公开(公告)日：2015-08-25

申请号：US13819038

申请日：2011-07-29

申请人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

发明人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

IPC分类号： H01L21/302 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20

CPC分类号： H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

摘要翻译： 在作为被处理基板的硅基板上形成氟碳层（步骤A）。 在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。 然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。 使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。 接下来，除去作为掩模的抗蚀剂层（步骤E）。 之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步​​骤F）。 由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

公开(公告)号：US20130157468A1

公开(公告)日：2013-06-20

申请号：US13819038

申请日：2011-07-29

申请人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

发明人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.