公开(公告)号：US06667498B2

公开(公告)日：2003-12-23

申请号：US10163698

申请日：2002-06-05

申请人： Toshiki Makimoto ,  Kazuhide Kumakura ,  Naoki Kobayashi

发明人： Toshiki Makimoto ,  Kazuhide Kumakura ,  Naoki Kobayashi

IPC分类号： H01L310328

CPC分类号： H01L33/32 ,  H01L29/2003 ,  H01L29/66318 ,  H01L29/7371

摘要： A transistor structure is implemented which can achieve high current gain by causing electrons injected from an emitter to reach a collector. An InGaN graded layer, which is interposed between a p-type InGaN layer and an n-type GaN layer, includes an In composition that varies from 0% to 10%. A bandgap of the thin film structure is gradually reduced from the substrate side to the surface side. An AlN buffer layer is grown on an SiC substrate by 100 nm thick, followed by growing a Si-doped GaN layer used for forming an ohmic electrode. A Si-doped GaN layer (n-type GaN layer) is grown thereon, followed by growing an InGaN layer whose In composition is varied, and by growing, an Mg-doped InGaN (p-type GaN layer), thereby fabricating a heterojunction diode.

公开(公告)号：US20050224831A1

公开(公告)日：2005-10-13

申请号：US10516380

申请日：2004-01-06

申请人： Toshiki Makimoto ,  Kazuhide Kumakura ,  Naoki Kobayashi

发明人： Toshiki Makimoto ,  Kazuhide Kumakura ,  Naoki Kobayashi

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L29/20 ,  H01L29/737 ,  H01L33/00

CPC分类号： H01L29/66318 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/7371

摘要： A nitride semiconductor structure is provided which greatly improves ohmic characteristics by repairing process damage by regrowing an indium-containing p-type nitride semiconductor on a p-type nitride semiconductor having the process damage. In addition, a nitride semiconductor bipolar transistor is provided which can greatly improve its current gain and offset voltage. The structure includes an indium-containing p-type nitride semiconductor layer on a p-type nitride semiconductor processed by etching. The bipolar transistor, which has a base layer composed of a p-type nitride semiconductor, has an indium-containing p-type InGaN base layer regrown on a surface of a p-type InGaN base layer exposed by etching an emitter layer.

摘要翻译： 提供了一种氮化物半导体结构，其通过在具有工艺损伤的p型氮化物半导体上重新生长含铟p型氮化物半导体来修复工艺损伤而极大地改善欧姆特性。 此外，提供可以大大提高其电流增益和偏移电压的氮化物半导体双极晶体管。 该结构包括通过蚀刻处理的p型氮化物半导体上的含铟p型氮化物半导体层。 具有由p型氮化物半导体构成的基极层的双极晶体管在通过蚀刻发射极层而露出的p型InGaN基底层的表面上再生长含有铟的p型InGaN基极层。

公开(公告)号：US07804106B2

公开(公告)日：2010-09-28

申请号：US10516380

申请日：2004-01-06

申请人： Toshiki Makimoto ,  Kazuhide Kumakura ,  Naoki Kobayashi

发明人： Toshiki Makimoto ,  Kazuhide Kumakura ,  Naoki Kobayashi

IPC分类号： H01L33/00

CPC分类号： H01L29/66318 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/7371

摘要： A nitride semiconductor structure is provided which greatly improves ohmic characteristics by repairing process damage by regrowing an indium-containing p-type nitride semiconductor on a p-type nitride semiconductor having the process damage. In addition, a nitride semiconductor bipolar transistor is provided which can greatly improve its current gain and offset voltage. The structure includes an indium-containing p-type nitride semiconductor layer on a p-type nitride semiconductor processed by etching. The bipolar transistor, which has a base layer composed of a p-type nitride semiconductor, has an indium-containing p-type InGaN base layer regrown on a surface of a p-type InGaN base layer exposed by etching an emitter layer.

摘要翻译： 提供了一种氮化物半导体结构，其通过在具有工艺损伤的p型氮化物半导体上重新生长含铟p型氮化物半导体来修复工艺损伤而极大地改善欧姆特性。 此外，提供可以大大提高其电流增益和偏移电压的氮化物半导体双极晶体管。 该结构包括通过蚀刻处理的p型氮化物半导体上的含铟p型氮化物半导体层。 具有由p型氮化物半导体构成的基极层的双极晶体管在通过蚀刻发射极层而露出的p型InGaN基底层的表面上再生长含有铟的p型InGaN基极层。

公开(公告)号：US07244520B2

公开(公告)日：2007-07-17

申请号：US10532782

申请日：2004-08-11

申请人： Kazuhide Kumakura ,  Masanobu Hiroki ,  Toshiki Makimoto

发明人： Kazuhide Kumakura ,  Masanobu Hiroki ,  Toshiki Makimoto

IPC分类号： B32B9/00

CPC分类号： C30B29/403 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02658 ,  Y10T428/12569 ,  Y10T428/12625 ,  Y10T428/12875 ,  Y10T428/24

摘要： A substrate for growth of nitride semiconductor capable of obtaining a high-quality nitride semiconductor crystal layer is provided. A substrate for growth of nitride semiconductor for growth of a nitride semiconductor layer on a sapphire substrate (1) according to one embodiment of the invention is provided with an Al2O3 layer (2) as separately provided on the sapphire substrate (1), an AlON layer (3) which is the first layer, and an AlN layer (4) which is the second layer. With respect to the first layer and the second layer, the AlON layer (3) and the AlN layer (4) are deposited on the Al2O3 layer (2) in this order.

摘要翻译： 提供了能够获得高质量氮化物半导体晶体层的氮化物半导体的生长用衬底。 根据本发明的一个实施方案，用于在蓝宝石衬底（1）上生长氮化物半导体层的氮化物半导体生长用衬底设置有Al 2 O 3 3 单独设置在蓝宝石衬底（1）上的层（2），作为第一层的AlON层（3）和作为第二层的AlN层（4）。 对于第一层和第二层，AlON层（3）和AlN层（4）沉积在Al 2 O 3层（2）上， 按此顺序

公开(公告)号：US09219111B2

公开(公告)日：2015-12-22

申请号：US14235765

申请日：2012-09-05

申请人： Yasuyuki Kobayashi ,  Kazuhide Kumakura ,  Tetsuya Akasaka ,  Toshiki Makimoto

发明人： Yasuyuki Kobayashi ,  Kazuhide Kumakura ,  Tetsuya Akasaka ,  Toshiki Makimoto

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/15 ,  H01L29/16 ,  H01L33/32 ,  C30B25/18 ,  C30B29/40 ,  H01L29/778 ,  H01L29/20 ,  H01L33/12 ,  H01L33/16

CPC分类号： H01L29/04 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/15 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32

摘要： A nitride semiconductor structure of the present invention is obtained by growing an h- or t-BN thin film (12) and a wurtzite-structure AlxGa1-xN (x>0) thin film (14) as buffer layers and forming a single-crystal wurtzite-structure AlGaInBN thin film (13) thereon. While GaN, AlGaN, AlN, and the like have the wurtzite structure with sp3 bonds, h-BN or t-BN has the graphite structure with sp2 bonds, and has a completely different crystal structure. Accordingly, it has heretofore not been considered that a wurtzite-structure AlGaInBN thin film can be grown on a graphite-structure h-BN thin film. However, when a wurtzite-structure AlxGa1-xN (x>0) thin film (14) is formed as a buffer layer on a graphite-structure boron nitride thin film (12), a wurtzite-structure AlGaInBN (13) nitride semiconductor structure such as GaN can be grown on the buffer layer.

摘要翻译： 通过将h-或t-BN薄膜（12）和纤锌矿结构Al x Ga 1-x N（x> 0）薄膜（14）作为缓冲层生长，并形成单层结构，获得本发明的氮化物半导体结构。 水晶纤锌矿结构AlGaInBN薄膜（13）。 虽然GaN，AlGaN，AlN等具有带sp3键的纤锌矿结构，但是h-BN或t-BN具有具有sp2键的石墨结构，并且具有完全不同的晶体结构。 因此，迄今为止尚未考虑在石墨结构的h-BN薄膜上生长纤锌矿型AlGaInBN薄膜。 然而，当在石墨结构氮化硼薄膜（12）上形成纤锌矿结构Al x Ga 1-x N（x> 0）薄膜（14）作为缓冲层时，具有纤锌矿结构的AlGaInBN（13）氮化物半导体结构 例如可以在缓冲层上生长GaN。

公开(公告)号：US20060051554A1

公开(公告)日：2006-03-09

申请号：US10532782

申请日：2004-08-11

申请人： Kazuhide Kumakura ,  Masanobu Hiroki ,  Toshiki Makimoto

发明人： Kazuhide Kumakura ,  Masanobu Hiroki ,  Toshiki Makimoto

IPC分类号： B32B15/08 ,  C03C27/02 ,  B32B15/01 ,  B32B5/00

CPC分类号： C30B29/403 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02658 ,  Y10T428/12569 ,  Y10T428/12625 ,  Y10T428/12875 ,  Y10T428/24

摘要： A substrate for growth of nitride semiconductor capable of obtaining a high-quality nitride semiconductor crystal layer is provided. A substrate for growth of nitride semiconductor for growth of a nitride semiconductor layer on a sapphire substrate (1) according to one embodiment of the invention is provided with an Al2O3 layer (2) as separately provided on the sapphire substrate (1), an AlON layer (3) which is the first layer, and an AlN layer (4) which is the second layer. With respect to the first layer and the second layer, the AlON layer (3) and the AlN layer (4) are deposited on the Al2O3 layer (2) in this order.

摘要翻译： 提供了能够获得高质量氮化物半导体晶体层的氮化物半导体的生长用衬底。 根据本发明的一个实施方案，用于在蓝宝石衬底（1）上生长氮化物半导体层的氮化物半导体生长用衬底设置有Al 2 O 3 3 单独设置在蓝宝石衬底（1）上的层（2），作为第一层的AlON层（3）和作为第二层的AlN层（4）。 对于第一层和第二层，AlON层（3）和AlN层（4）沉积在Al 2 O 3层（2）上， 按此顺序

公开(公告)号：US20140145147A1

公开(公告)日：2014-05-29

申请号：US14235765

申请日：2012-09-05

申请人： Yasuyuki Kobayashi ,  Kazuhide Kumakura ,  Tetsuya Akasaka ,  Toshiki Makimoto

发明人： Yasuyuki Kobayashi ,  Kazuhide Kumakura ,  Tetsuya Akasaka ,  Toshiki Makimoto

IPC分类号： H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L21/02 ,  H01L29/15

CPC分类号： H01L29/04 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/15 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32

摘要： A nitride semiconductor structure of the present invention is obtained by growing an h- or t-BN thin film (12) and a wurtzite-structure AlxGa1-xN (x>0) thin film (14) as buffer layers and forming a single-crystal wurtzite-structure AlGaInBN thin film (13) thereon. While GaN, AlGaN, AlN, and the like have the wurtzite structure with sp3 bonds, h-BN or t-BN has the graphite structure with sp2 bonds, and has a completely different crystal structure. Accordingly, it has heretofore not been considered that a wurtzite-structure AlGaInBN thin film can be grown on a graphite-structure h-BN thin film. However, when a wurtzite-structure AlxGa1-xN (x>0) thin film (14) is formed as a buffer layer on a graphite-structure boron nitride thin film (12), a wurtzite-structure AlGaInBN (13) nitride semiconductor structure such as GaN can be grown on the buffer layer.

摘要翻译： 通过将h-或t-BN薄膜（12）和纤锌矿结构Al x Ga 1-x N（x> 0）薄膜（14）作为缓冲层生长，并形成单层结构，获得本发明的氮化物半导体结构。 水晶纤锌矿结构AlGaInBN薄膜（13）。 虽然GaN，AlGaN，AlN等具有带sp3键的纤锌矿结构，但是h-BN或t-BN具有具有sp2键的石墨结构，并且具有完全不同的晶体结构。 因此，迄今为止尚未考虑在石墨结构的h-BN薄膜上生长纤锌矿型AlGaInBN薄膜。 然而，当在石墨结构氮化硼薄膜（12）上形成纤锌矿结构Al x Ga 1-x N（x> 0）薄膜（14）作为缓冲层时，具有纤锌矿结构的AlGaInBN（13）氮化物半导体结构 例如可以在缓冲层上生长GaN。