公开(公告)号：US20090220692A1

公开(公告)日：2009-09-03

申请号：US11817717

申请日：2006-02-20

申请人： Toshio Takagi ,  Hiroshi Kaneko ,  Teruo Iwata ,  Tamaki Takeyama ,  Akinobu Kakimoto

发明人： Toshio Takagi ,  Hiroshi Kaneko ,  Teruo Iwata ,  Tamaki Takeyama ,  Akinobu Kakimoto

IPC分类号： C23C16/06 ,  B05C11/00 ,  C23C16/00

CPC分类号： H01J37/32935 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45544 ,  H01J37/3244 ,  H01J37/32568

摘要： A method of processing a substrate by a substrate processing apparatus is disclosed. The substrate processing apparatus includes a processing container including a first space where a first processing gas or a second processing gas is supplied onto the substrate and a second space formed around the first space; a first exhaust unit configured to evacuate the first space; and a second exhaust unit configured to evacuate the second space. The method includes a first step of supplying the first processing gas into the first space; a second step of discharging the first processing gas from the first space; a third step of supplying the second processing gas into the first space; and a fourth step of discharging the second processing gas from the first space; wherein the pressure in the second space is adjusted by a pressure-adjusting gas supplied into the second space.

摘要翻译： 公开了一种通过衬底处理装置处理衬底的方法。 基板处理装置包括处理容器，该处理容器包括第一处理气体或第二处理气体供给到基板上的第一空间和形成在第一空间周围的第二空间; 第一排气单元，其构造成排空所述第一空间; 以及第二排气单元，其构造成抽空第二空间。 该方法包括将第一处理气体供应到第一空间中的第一步骤; 从第一空间排出第一处理气体的第二步骤; 将第二处理气体供给到第一空间的第三步骤; 以及从所述第一空间排出所述第二处理气体的第四步骤; 其中所述第二空间中的压力通过供应到所述第二空间中的压力调节气体来调节。

公开(公告)号：US20100224620A1

公开(公告)日：2010-09-09

申请号：US12279953

申请日：2007-02-07

申请人： Kazuo Shibata ,  Hiroo Kawasaki ,  Teruo Iwata ,  Manabu Amikura

发明人： Kazuo Shibata ,  Hiroo Kawasaki ,  Teruo Iwata ,  Manabu Amikura

IPC分类号： H05B3/68

CPC分类号： H05B3/145 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/283 ,  H05B2203/002 ,  H05B2203/003 ,  H05B2203/014 ,  H05B2203/016 ,  H05B2203/037

摘要： [Problem to be Solved] To provide a plane heater including a carbon wire heating element which has an arrangement pattern allowing a heating surface to be a substantially uniform heating temperature plane.[Means to Solve Problem] Surface arrangement densities of a carbon wire heating element CW are different in an inner area and an outer area located in the periphery. The surface arrangement density in the above-mentioned outer area is denser than the surface arrangement density in the inner area. A power supply terminal unit 8 having connection wires for supplying electricity to the above-mentioned heating element CW is arranged in the center on the back side of the above-mentioned silica glass plate-like member 2. The connection wires 4a and 4b connected with the carbon wire heating element in the above-mentioned inner area are connected with the carbon wire heating element CW in the inner area in the center of the above-mentioned silica glass plate-like member. The connection wires 3a and 3b connected with the carbon wire heating element in the above-mentioned outer area are extended from the center of the above-mentioned silica glass plate-like member toward the outer area, and are connected with the carbon wire heating element CW in the outer area, without intersecting the carbon wire heating element CW in the above-mentioned inner area.

摘要翻译： [待解决的问题]提供一种具有碳线加热元件的平面加热器，其具有允许加热表面为基本上均匀的加热温度平面的布置图案。 解决问题的手段碳丝加热元件CW的表面排列密度在内部区域和位于周边的外部区域不同。 上述外部区域中的表面排列密度比内部区域中的表面排列密度更致密。 具有用于向上述加热元件CW供电的连接线的电源端子单元8布置在上述石英玻璃板状构件2的背面的中心。连接线4a和4b与 上述内部区域中的碳丝加热元件与上述石英玻璃板状构件的中心的内部区域中的碳线加热元件CW连接。 与上述外部区域中的碳丝加热元件连接的连接线3a和3b从上述石英玻璃板状构件的中心向外部区域延伸，并与碳线加热元件 CW在外部区域中，而不与上述内部区域中的碳线加热元件CW相交。

公开(公告)号：US20070212485A1

公开(公告)日：2007-09-13

申请号：US11797740

申请日：2007-05-07

申请人： Teruo Iwata

发明人： Teruo Iwata

IPC分类号： C23C16/52

CPC分类号： C23C16/52 ,  C23C16/4481

摘要： A deposition apparatus supplies a reactive gas obtained by vaporizing a liquid material at a vaporizer 30 into a chamber 10 via a processing-gas pipe 40 and forms a thin film on a semiconductor wafer W due to a thermal decomposition of the reactive gas. The deposition apparatus is provided, in the processing-gas pipe 40, with a crystal gauge 51 detecting a pressure Pq under the influence of mist in the reactive gas and a capacitance manometer 52 detecting a pressure Pg under no influence of the mist. The apparatus further includes a gasification monitor 50 detecting a quantity of mist in the reactive gas on the basis of a difference ΔP between the pressure Pq and the pressure Pg measured by the crystal gauge 51 and the capacitance manometer 52 in order to prevent deposition defects due to the mist in the reactive gas.

公开(公告)号：US20060280868A1

公开(公告)日：2006-12-14

申请号：US11452247

申请日：2006-06-14

申请人： Yoshitake Kato ,  Teruo Iwata

发明人： Yoshitake Kato ,  Teruo Iwata

IPC分类号： C23C16/00 ,  G06F19/00 ,  B05C11/00

CPC分类号： C23C16/4404 ,  C23C16/52

摘要： A method for treating a vapor deposition apparatus, a method for depositing a thin film, a vapor deposition apparatus and a computer program product are disclosed for providing a reduced cleaning frequency. Accumulated material is deposited on an interior wall of a chamber of a vapor deposition unit during deposition of a thin film. While the deposition of the thin film is repeated, a gas is emitted from the accumulated material to deteriorate an uniformity in the film thickness of the thin film. The method involves depositing an amorphous film to cover the accumulated material before any influence of the accumulated material deposited on the interior wall of the chamber on the thickness of the thin film is evident. Gas emission from the accumulated material can be prevented by covering the accumulated material with the amorphous film. This configuration provides a thin film having an improved uniformity of thickness.

摘要翻译： 公开了一种用于处理蒸镀装置的方法，沉积薄膜的方法，蒸镀装置和计算机程序产品，用于提供降低的清洗频率。 在沉积薄膜期间，积聚的材料沉积在气相沉积单元的室的内壁上。 当重复沉积薄膜时，从积聚的材料发出气体，从而使薄膜的膜厚均匀化。 在沉积在室内壁上的累积材料对薄膜厚度的任何影响是明显的之前，该方法包括沉积非晶膜以覆盖积聚的材料。 可以通过用非晶膜覆盖积累的材料来防止来自积聚的材料的气体排放。 这种构造提供了具有改善的厚度均匀性的薄膜。

公开(公告)号：US5382311A

公开(公告)日：1995-01-17

申请号：US168367

申请日：1993-12-17

申请人： Kenji Ishikawa ,  Mitsuaki Komino ,  Tadashi Mitui ,  Teruo Iwata ,  Izumi Arai ,  Yoshifumi Tahara

发明人： Kenji Ishikawa ,  Mitsuaki Komino ,  Tadashi Mitui ,  Teruo Iwata ,  Izumi Arai ,  Yoshifumi Tahara

IPC分类号： C23C16/458 ,  H01L21/683 ,  H01L21/00

CPC分类号： C23C16/466 ,  C23C16/4586 ,  H01L21/6831

摘要： A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

摘要翻译： 用于半导体晶片的等离子体蚀刻装置包括设置在真空处理室中的基座。 在基座的安装面形成有用于使传热气体流动的槽。 该槽包括沿着安装表面的周边边缘形成的环形槽部分，并且垂直延伸穿过基座的气体路径连接到环形槽部分。 片状静电卡盘气密地粘附在基座的安装面上以覆盖凹槽。 在静电卡盘中形成有多个通孔，这些孔沿着槽的上方配置。 传热气体通过气路，凹槽和通孔供应在静电卡盘和半导体晶片之间。 传热气体有助于从布置在基座下方的液氮源将冷转移到晶片。

公开(公告)号：US5240556A

公开(公告)日：1993-08-31

申请号：US893018

申请日：1992-06-03

申请人： Yoshio Ishikawa ,  Junichi Arami ,  Towl Ikeda ,  Teruo Iwata

发明人： Yoshio Ishikawa ,  Junichi Arami ,  Towl Ikeda ,  Teruo Iwata

IPC分类号： C23C16/54 ,  H01L21/00

CPC分类号： H01L21/67207 ,  C23C16/54 ,  H01L21/67069 ,  H01L21/67115

摘要： According to this invention, a surface-treating apparatus capable of etching an object to be treated with high accuracy, suppressing discharging of a harmful gas deposited on the etched object in the air, and preventing the surface of the object from deposition/ attachment of reaction products and droplets is disclosed. The surface-treating apparatus includes a first process chamber for etching a loaded object to be treated by an activated etching gas, an exhausting member for setting the first process chamber at a low pressure, a cooling means for cooling the object loaded in the first process chamber, a second process chamber in which the object etched by the first process chamber is loaded, an exhausting member for setting the second process chamber at a low pressure, and an heating member for annealing the object loaded in the second process chamber.

摘要翻译： 根据本发明，能够高精度地蚀刻被处理物的表面处理装置，抑制在空气中沉积在被蚀刻物上的有害气体的排出，防止物体的表面沉积/附着反应 产品和液滴被公开。 表面处理装置包括用于蚀刻被激活的蚀刻气体处理的被加载物体的第一处理室，用于将第一处理室设置在低压的排出构件，用于冷却在第一处理中加载的物体的冷却装置 第二处理室，其中装载有由第一处理室蚀刻的物体，用于将第二处理室设置在低压的排气构件，以及用于对装载在第二处理室中的物体进行退火的加热构件。

公开(公告)号：US20070272154A1

公开(公告)日：2007-11-29

申请号：US10574531

申请日：2004-10-22

申请人： Manabu Amikura ,  Teruo Iwata

发明人： Manabu Amikura ,  Teruo Iwata

IPC分类号： H01L21/31 ,  C23C16/455

CPC分类号： C23C16/45565

摘要： The present invention relates to a showerhead that supplies a source gas and a supporting gas for depositing a film into a processing vessel of a film deposition apparatus. The showerhead includes a body which is provided with a gas jetting surface (8). In the showerhead body, there are defined a first diffusion chamber (60) that receives the source gas and diffuses the same, and a second diffusion chamber (62) that receives the supporting gas and diffuses the same. The gas jetting surface has source-gas jetting orifices (10A) that are in communication with the first diffusion chamber, and first supporting-gas jetting orifices (10B) that are in communication with the second diffusion chamber. Each of the first supporting-gas jetting orifices (10B) are formed into a ring shape that adjacently surrounds a corresponding one of the source-gas jetting orifices (10A).

摘要翻译： 本发明涉及一种将源气体和用于将膜沉积的支撑气体供应到成膜装置的处理容器中的喷头。 喷头包括设置有气体喷射表面（8）的主体。 在喷头体中，限定了接收源气体并使其扩散的第一扩散室（60）和容纳支持气体并使其扩散的第二扩散室（62）。 气体喷射表面具有与第一扩散室连通的源气喷射孔（10A）和与第二扩散室连通的第一支撑气体喷射孔（10B）。 第一支撑气体喷射孔（10B）中的每一个形成为相邻地围绕相应的一个源气体喷射孔（10A）的环形。

公开(公告)号：US06436193B1

公开(公告)日：2002-08-20

申请号：US09534342

申请日：2000-03-24

申请人： Shigeru Kasai ,  Teruo Iwata ,  Taro Komiya ,  Tomihiro Yonenaga

发明人： Shigeru Kasai ,  Teruo Iwata ,  Taro Komiya ,  Tomihiro Yonenaga

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45514 ,  H01J37/3244

摘要： A gas processing apparatus is disclosed, that comprises a processing chamber that is airtightly structured, a gas delivery pipe connected to the processing chamber, a gas supply source for supplying gas to the processing chamber through the gas delivery pipe, a holding table for holding a workpiece loaded to the processing chamber, a shower member disposed at a gas outlet of the gas delivery pipe connected to the processing chamber, a spray plate structured as a partition wall of the shower member that faces the holding plate, the spray plate having a plurality of spray holes, and a baffle member disposed between the spray plate in the shower member and the gas outlet and having a plurality of through-holes formed perpendicular to the surface of the baffle member, wherein each of the through-holes of the baffle member has a first opening portion and a second opening portion facing the gas outlet, the second opening portion facing the spray plate, the opening area of the second opening portion being larger than the opening portion of the first opening portion. Thus, a gas processing apparatus and a gas processing method that allow gas to be uniformly supplied to the entire surface of a workpiece are provided. In addition, a baffle member for use with the gas processing apparatus and the gas processing method is provided.

摘要翻译： 公开了一种气体处理装置，其包括气密结构的处理室，连接到处理室的气体输送管，用于通过气体输送管向处理室供应气体的气体供给源，用于保持 装载到处理室的工件，设置在连接到处理室的气体输送管的气体出口处的喷淋构件，构成为与保持板相对的淋浴构件的分隔壁的喷射板，喷射板具有多个 的喷孔，以及设置在淋浴构件中的喷射板和气体出口之间的挡板构件，并且具有垂直于挡板构件的表面形成的多个通孔，其中挡板构件的每个通孔 具有面向气体出口的第一开口部分和第二开口部分，面向喷射板的第二开口部分，第二开口的开口区域 部分大于第一开口部分的开口部分。 因此，提供了允许气体均匀地供应到工件的整个表面的气体处理装置和气体处理方法。 此外，提供了一种与气体处理装置一起使用的挡板部件和气体处理方法。

公开(公告)号：US6149729A

公开(公告)日：2000-11-21

申请号：US80718

申请日：1998-05-19

申请人： Teruo Iwata ,  Kazuichi Hayashi ,  Yuichiro Fujikawa ,  Takashi Horiuchi

发明人： Teruo Iwata ,  Kazuichi Hayashi ,  Yuichiro Fujikawa ,  Takashi Horiuchi

IPC分类号： B01D53/04 ,  C23C16/44 ,  C23C16/00

CPC分类号： C23C16/4412 ,  C23C16/4405

摘要： A film forming apparatus includes a chamber in which a thin film is formed on a semiconductor wafer by supplying a process gas, the interior of which is then cleaned by a cleaning gas, while the gas in the chamber is exhausted by a vacuum system. The vacuum system includes a main vacuum line connected to a vacuum port of the chamber, a high-vacuum pump arranged on an upstream side of the main vacuum line, a coarse control vacuum pump arranged on a downstream side of the main vacuum line, a bypass line which is connected to the main vacuum line so as to bypass the high-vacuum pump and has a first connection portion connected between the vacuum port and the high-vacuum pump and a second connection portion connected between the high-vacuum pump and the coarse control vacuum pump, a trap arranged on the bypass line, heater arranged between the first connection portion and the trap for heating gas flowing from the first connection portion to the trap, and valves for selectively opening/closing the main vacuum line and the bypass line to allow the gas in the chamber to flow through one of the lines.

摘要翻译： 成膜装置包括：室，其中通过提供处理气体在半导体晶片上形成薄膜，然后通过真空系统排出室内的气体，其内部被清洁气体清洁。 真空系统包括连接到腔室的真空口的主真空管线，配置在主真空管线的上游侧的高真空泵，设置在主真空管线下游侧的粗调控制真空泵， 旁通管线，其与主真空管线连接以绕过高真空泵，并且具有连接在真空口和高真空泵之间的第一连接部分和连接在高真空泵和高真空泵之间的第二连接部分 布置在旁路管路上的疏水阀，布置在第一连接部分和捕集器之间的加热器，用于加热从第一连接部分流到捕集器的气体，以及用于选择性地打开/关闭主真空管线和旁路的阀 以允许室中的气体流过其中一条线。

公开(公告)号：US5727634A

公开(公告)日：1998-03-17

申请号：US506981

申请日：1995-07-28

申请人： Hiroshi Ishida ,  Akira Asoma ,  Shuji Matsumoto ,  Teruo Iwata ,  Hiroyuki Shibuya ,  Suguru Shimokawa ,  Keiichi Kawaguchi ,  Masaru Fujita ,  Toshiaki Matsumoto

发明人： Hiroshi Ishida ,  Akira Asoma ,  Shuji Matsumoto ,  Teruo Iwata ,  Hiroyuki Shibuya ,  Suguru Shimokawa ,  Keiichi Kawaguchi ,  Masaru Fujita ,  Toshiaki Matsumoto

IPC分类号： A62C31/05 ,  A62C37/40

CPC分类号： A62C37/40 ,  A62C31/05

摘要： A fire detecting/extinguishing apparatus according to the present invention is comprised of a fire detecting unit which monitors to detect a fire within a monitoring area, the fire detecting unit stepwise scanning in a vertical direction while scanning the fire monitoring area in the vertical direction at each step of the horizontal scanning; a water discharging unit having a water discharging nozzle for discharging water to the monitoring area, the water discharging unit being rotatable in the horizontal direction, the water discharging unit being directed toward a position of the fire based on the fire detection by the fire detecting unit; a swinging unit which swings the water discharging unit in the horizontal direction; and a casing in which the fire detecting unit and the water discharging unit are housed as a single unit. Further, the apparatus of the present invention includes a cover fixed to a side of the water discharging nozzle which is opposite to the side of the water discharging nozzle. The cover is capable of rotating together with the water discharging unit, and the cover is flush with a front wall of the casing when the water discharging nozzle is housed in the casing.

摘要翻译： 根据本发明的火灾检测/灭火装置包括：火灾检测单元，其监视监测区域内的火灾，火灾检测单元沿垂直方向逐步扫描，同时沿垂直方向扫描火灾监测区域; 水平扫描的每一步; 排水单元，具有用于向监测区域排放水的排水口，排水单元可沿水平方向旋转，排水单元基于火灾检测单元的火灾检测而指向火灾位置 ; 摆放单元，其在水平方向摆动排水单元; 以及壳体，其中火灾检测单元和排水单元被容纳为单个单元。 此外，本发明的装置包括固定在排水喷嘴的与排水嘴侧相对的一侧的盖。 盖子能够与排水单元一起旋转，并且当排水喷嘴容纳在壳体中时，盖子与壳体的前壁齐平。