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    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20090181535A1

    公开(公告)日：2009-07-16

    申请号：US12406487

    申请日：2009-03-18

    申请人： Toshitsugu SAKAMOTO ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

    发明人： Toshitsugu SAKAMOTO ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76838 ,  B82Y10/00 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Scale down design has posed problems in an increase in the resistance value of an interconnection structure and a decrease in the resistance to electromigration and stress migration. The present invention provides an interconnection structure of a high-reliability semiconductor device which has a low resistance value even in the case of scale down design and does not produce electromigration or stress migration, and a method of manufacturing the interconnection structure. Provided are a semiconductor device which has an interconnection or a connection plug, both of which are fabricated from a mixture of a metal and carbon nanotubes, in an interconnection trench or a via hole, both of which are formed on an insulating film on a substrate on which a semiconductor device element is formed, and a method of manufacturing this semiconductor device.

    摘要翻译： 缩小设计在互连结构的电阻值的增加和电迁移和应力迁移的阻力降低方面存在问题。 本发明提供即使在缩小设计的情况下也具有低电阻值并且不产生电迁移或应力迁移的高可靠性半导体器件的互连结构，以及制造互连结构的方法。 提供一种半导体器件，其具有互连或连接插头，它们都由互连沟槽或通孔中的金属和碳纳米管的混合物制成，它们都形成在衬底上的绝缘膜上 其上形成有半导体器件元件，以及制造该半导体器件的方法。

    SECONDARY BATTERY SYSTEM AND CHARGE AND DISCHARGE METHOD FOR THE SAME
    4.
    发明申请
    SECONDARY BATTERY SYSTEM AND CHARGE AND DISCHARGE METHOD FOR THE SAME 有权
    二次电池系统及其充电和放电方法

    公开(公告)号：US20130175997A1

    公开(公告)日：2013-07-11

    申请号：US13810835

    申请日：2012-06-13

    申请人： Hiroo Hongo ,  Kenji Kobayashi ,  Koji Kudo ,  Kenichi Ishii ,  Takayuki Nyu

    发明人： Hiroo Hongo ,  Kenji Kobayashi ,  Koji Kudo ,  Kenichi Ishii ,  Takayuki Nyu

    IPC分类号： H02J7/00

    CPC分类号： H02J7/007 ,  H01M4/505 ,  H01M10/052 ,  H01M10/44 ,  H01M10/441 ,  H01M10/48 ,  H01M10/482 ,  H01M2010/4271 ,  H02J3/32 ,  H02J7/0013 ,  H02J7/0021 ,  H02J7/0063 ,  H02J7/0073 ,  H02J2007/0067 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7055

    摘要： A secondary battery has a progressively degrading SOC that is an SOC at which the battery performance degrades during storage, and is charged and discharged by a controller. An information processor holds a first threshold value set in advance and lower than the progressively degrading SOC of the secondary battery, and a second threshold value set in advance and higher than the progressively degrading SOC, makes the controller continue an operation to charge the secondary battery from the first threshold value to the second threshold value at the time of charging the secondary battery based on the value of the SOC of the secondary battery detected by the controller, and makes the controller continue an operation to discharge the secondary battery from the second threshold value to the first threshold value at the time of discharging the secondary battery based on the value of the SOC of the secondary battery detected by the controller.

    摘要翻译： 二次电池具有逐渐劣化的SOC，其是在存储期间电池性能劣化的SOC，并且由控制器充电和放电。 信息处理器保持预先设定的低于二次电池的逐渐劣化的SOC的第一阈值和预先设定为高于逐渐劣化的SOC的第二阈值，使得控制器继续对二次电池充电的操作 基于由控制器检测到的二次电池的SOC的值，从二次电池充电时的第一阈值到第二阈值，并使控制器继续进行从第二阈值排出二次电池的操作 基于由控制器检测到的二次电池的SOC的值，在二次电池放电时的值为第一阈值。

    CHARGING AND DISCHARGING METHOD FOR LITHIUM ION SECONDARY BATTERIES AND CHARGING AND DISCHARGING SYSTEM FOR THE SAME
    5.
    发明申请
    CHARGING AND DISCHARGING METHOD FOR LITHIUM ION SECONDARY BATTERIES AND CHARGING AND DISCHARGING SYSTEM FOR THE SAME 审中-公开
    用于锂离子二次电池的充电和放电方法及其相同的充电和放电系统

    公开(公告)号：US20130009605A1

    公开(公告)日：2013-01-10

    申请号：US13265414

    申请日：2011-02-17

    申请人： Hiroo Hongo ,  Koji Kudo ,  Hisato Sakuma ,  Ryosuke Kuribayashi

    发明人： Hiroo Hongo ,  Koji Kudo ,  Hisato Sakuma ,  Ryosuke Kuribayashi

    IPC分类号： H02J7/00

    CPC分类号： H02J7/0026 ,  H01M4/505 ,  H01M10/0525 ,  H01M10/441 ,  Y02T10/7011 ,  Y02T10/7055

    摘要： A first threshold that is lower than a progressively deteriorating SOC that is an SOC in which a battery performance of the lithium ion secondary battery deteriorates when the lithium ion secondary battery is stored and a second threshold that is greater than the progressively deteriorating SOC are preset. A computer controls a switch provided between electric wires and the lithium ion secondary battery, an electric power supply source that supplies electric power necessary to charge the lithium ion secondary battery and a load that consumes electric power discharged from the lithium ion secondary battery are connected to the electric wires, such that a charging operation for the lithium ion secondary battery is continued from the first threshold to the second threshold when the lithium ion secondary battery is charged based on value of the SOC of the lithium ion secondary battery, the value of the SOC is transmitted from a monitor device that detects the value of the SOC of the lithium ion secondary battery and that controls the switch such that a discharging operation for the lithium ion secondary battery is continued from the second threshold to the first threshold when the lithium ion secondary battery is discharged.

    摘要翻译： 预先设定低于逐渐劣化的SOC的第一阈值，SOC是作为锂离子二次电池的电池性能在存储时劣化的SOC，并且预先设定大于逐渐劣化的SOC的第二阈值的SOC。 计算机控制在电线和锂离子二次电池之间提供的开关，提供对锂离子二次电池充电所需的电力的电力供应源和消耗从锂离子二次电池放电的电力的负载连接到 使得当基于锂离子二次电池的SOC的值对锂离子二次电池进行充电时，锂离子二次电池的充电操作从第一阈值继续到第二阈值， 从检测锂离子二次电池的SOC的值的监视装置发送SOC，并且控制开关，使得锂离子二次电池的放电操作从第二阈值持续到第一阈值时，锂离子 二次电池放电。

    Field-effect type transistor having two gate electrodes and display element using the same
    6.
    发明授权
    Field-effect type transistor having two gate electrodes and display element using the same 失效
    具有两个栅电极的场效应晶体管和使用其的显示元件

    公开(公告)号：US08222642B2

    公开(公告)日：2012-07-17

    申请号：US12451005

    申请日：2008-04-16

    申请人： Hiroo Hongo

    发明人： Hiroo Hongo

    IPC分类号： H01L29/786

    CPC分类号： H01L29/78645 ,  H01L27/124

    摘要： A field-effect type transistor has: a source electrode; a drain electrode being a metal electrode; a semiconductor layer provided to be in contact with both of the source electrode and the drain electrode; and a gate electrode provided to face at least a part of the semiconductor layer. The gate electrode has: a first gate electrode; and a second gate electrode provided closer to the drain electrode than the first gate electrode is. The second gate electrode is so connected as to have a same potential as the drain electrode and is electrically isolated from the first gate electrode. Consequently, in a display device, the off-leakage current is suppressed, and reduction in a pixel area and a bus interconnection width is suppressed.

    摘要翻译： 场效应型晶体管具有：源电极; 漏电极是金属电极; 设置成与源极电极和漏极电极接触的半导体层; 以及设置成面对所述半导体层的至少一部分的栅电极。 栅电极具有：第一栅电极; 并且比第一栅电极更靠近漏电极设置的第二栅电极。 第二栅电极被连接成具有与漏电极相同的电位，并与第一栅极电隔离。 因此，在显示装置中，抑制了泄漏电流，并且抑制了像素区域和总线互连宽度的减小。

    Slave device requesting its master device not to cancel its power saving mode
    7.
    发明授权
    Slave device requesting its master device not to cancel its power saving mode 有权

    公开(公告)号：US09727107B2

    公开(公告)日：2017-08-08

    申请号：US13813744

    申请日：2011-08-04

    申请人： Hiroo Hongo ,  Masaki Yasukawa

    发明人： Hiroo Hongo ,  Masaki Yasukawa

    IPC分类号： G06F1/32 ,  G06F1/26 ,  H04Q9/00 ,  G06F13/12 ,  G08C17/00 ,  H04L12/12

    CPC分类号： G06F1/266 ,  G06F13/126 ,  G08C17/00 ,  G08C2201/50 ,  H04L12/12 ,  H04Q9/00 ,  H04Q2209/826 ,  H04Q2209/883

    摘要： A controlled apparatus periodically transmits state information indicating the state of the apparatus, and when the state has been changed, transmits state information indicating the state after the change. Upon receiving state information from the controlled apparatus, a control apparatus, when not requesting a change of state in the controlled apparatus, returns the state information to the controlled apparatus, and when requesting a change of the state in the controlled apparatus, changes state parameters in the state information that correspond to the state to be changed to required values and transmits the state information after the change to the controlled apparatus as a control command. The controlled apparatus, upon receiving the control command from the control apparatus, changes to a state in accordance with the state parameters that follow the change and transmits the state information indicating the state after the change to the control apparatus.

    STATE CONTROL SYSTEM AND METHOD
    8.
    发明申请
    STATE CONTROL SYSTEM AND METHOD 有权
    国家控制系统和方法

    公开(公告)号：US20130132744A1

    公开(公告)日：2013-05-23

    申请号：US13813744

    申请日：2011-08-04

    申请人： Hiroo Hongo ,  Masaki Yasukawa

    发明人： Hiroo Hongo ,  Masaki Yasukawa

    IPC分类号： G06F1/26 ,  G06F13/12

    CPC分类号： G06F1/266 ,  G06F13/126 ,  G08C17/00 ,  G08C2201/50 ,  H04L12/12 ,  H04Q9/00 ,  H04Q2209/826 ,  H04Q2209/883

    摘要： A controlled apparatus periodically transmits state information indicating the state of the apparatus, and when the state has been changed, transmits state information indicating the state after the change. Upon receiving state information from the controlled apparatus, a control apparatus, when not requesting a change of state in the controlled apparatus, returns the state information to the controlled apparatus, and when requesting a change of the state in the controlled apparatus, changes state parameters in the state information that correspond to the state to be changed to required values and transmits the state information after the change to the controlled apparatus as a control command. The controlled apparatus, upon receiving the control command from the control apparatus, changes to a state in accordance with the state parameters that follow the change and transmits the state information indicating the state after the change to the control apparatus.

    摘要翻译： 受控设备周期性地发送指示设备状态的状态信息，并且当状态已经改变时，发送指示改变之后的状态的状态信息。 当从受控装置接收到状态信息时，控制装置在不请求受控装置中的状态改变的情况下将状态信息返回到受控装置，并且当请求控制装置中的状态改变时，改变状态参数 在与将被改变为所需值的状态相对应的状态信息中，并将改变后的状态信息作为控制命令发送到受控设备。 控制装置在从控制装置接收到控制指令后，根据变更后的状态参数变更为状态，并将表示改变后的状态的状态信息发送给控制装置。

    Id tag
    9.
    发明申请
    Id tag 失效
    ID标签

    公开(公告)号：US20070132590A1

    公开(公告)日：2007-06-14

    申请号：US10583568

    申请日：2004-12-17

    申请人： Wataru Hattori ,  Hiroo Hongo ,  Fumiyuki Nihei ,  Hiroshi Sunamura

    发明人： Wataru Hattori ,  Hiroo Hongo ,  Fumiyuki Nihei ,  Hiroshi Sunamura

    IPC分类号： G08B13/14 ,  H04Q5/22 ,  G08B1/00

    CPC分类号： G06K19/0723 ,  G06K19/073 ,  G06K19/07345 ,  G06K19/07749 ,  G06K19/07779 ,  G06K19/07783 ,  G08B13/2417 ,  Y10T307/951

    摘要： When a predetermined voltage is applied between electrodes (302), metal ions deposit in a solid electrolyte (308), and thereby a conduction channel (310) is formed therein. The solid electrolyte switch (300) is thus turned on. Because this deposition mechanism is reversible, application of reverse voltage between the electrodes of the solid electrolyte switch (300) already turned on makes the deposited metal atoms to migrate in the solid electrolyte to thereby thin the conduction channel 300, thereby the channel finally disappears, and the solid electrolyte switch (300) is turned into a non-conductive state. Use of this switch successfully realizes an IC tag which can automatically be nullified without artificial nullification.

    摘要翻译： 当在电极（302）之间施加预定电压时，金属离子沉积在固体电解质（308）中，从而在其中形成导电通道（310）。 固体电解质开关（300）因此被接通。 由于该沉积机构是可逆的，所以在已经开启的固体电解质开关（300）的电极之间施加反向电压使得沉积的金属原子在固体电解质中迁移，从而使导电通道300变薄，由此通道最终消失， 并且固体电解质开关（300）变成非导通状态。 使用此开关成功实现了IC标签，可以自动被取消，而无需人为的无效。