摘要:
Provision of an EUV mask whereby influence of EUV reflected light from an absorber film surface in the peripheral portion of a mask pattern region is suppressed at a time of carrying out EUV lithography; an EUV mask blank to be employed for producing the above EUV mask; and a process for producing the EUV mask blank. A process for producing a reflective mask blank for EUV lithography (EUVL), comprising alternately laminating a high refractive index film and a low refractive index film on a substrate to form a multilayer reflective film for reflecting EUV light and forming an absorber layer for absorbing EUV light on the multilayer reflective film, wherein the process further comprises after formation of the above multilayer reflective film, heating a portion of a surface of the multilayer reflective film outside a portion to be a mask pattern region in a reflective mask for EUV lithography produced by employing the reflective mask blank for EUV, to reduce the reflectivity of the heated portion of the surface of the multilayer reflective film for EUV light.
摘要:
Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
摘要:
To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch.A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.
摘要:
There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate.A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.
摘要:
To provide a method and apparatus for cleaning a substrate to effectively remove an organic type or metallic type contaminant from a to-be-cleaned surface of a substrate by an increase in the intensity of UV light at the to-be-cleaned surface of the substrate and by an increase in the concentration of ozone O3, excited state oxygen atoms O(1D) and active oxygen.A method for cleaning a substrate by means of irradiation with UV light, wherein a second space containing a surface on the side of the substrate on which the cleaning is to be carried out (hereinafter referred to as the to-be-cleaned surface) and its vicinity, is an atmosphere comprising a gas or a liquid which generates at least one of ozone, excited state oxygen atoms and active oxygen species by the irradiation with the UV light, a first space containing a surface on the other side of the substrate (hereinafter referred to as the to-be-irradiated surface) is an atmosphere comprising a gas showing a low absorption of the UV light, and the UV light is permitted to enter via the first space into the to-be-irradiated surface of the substrate, then pass through the interior of the substrate and then be applied to the to-be-cleaned surface.
摘要:
A defect repair device includes a defect inspection unit configured to find a size of a protruding defect on a front surface of a multi-layer film having a rear surface opposite to the front surface, a calculation unit configured to calculate a repair energy so as to repair the protruding defect based on the size of the protruding defect found by the defect inspection unit, an energy supplier, and an energy controller configured to control the energy supplier to supply the repair energy calculated by the calculation unit to a portion in the multi-layer film from the rear surface of the multi-layer film so as to cause a decrease in a volume of the portion and retract the protruding defect into the multi-layer film.
摘要:
Disclosed is a synthetic silica glass for use with light having a wavelength of 150 to 200 nm, which has an OH group at a concentration of less than 1 ppm, an oxygen-excess type defect at a concentration of 1×1016 defects/cm3 or less, a hydrogen molecule at a concentration of less than 1×1017 molecules/cm3, and a non-bridging oxygen radical at a concentration of 1×1016 radicals/cm3 or less in the state after the synthetic silica glass is irradiated with light of a xenon excimer lamp having an energy density of 10 mW/cm2 and 3 kJ/cm2 or with light of an F2 laser by 107 pulses at an energy density of 10 mJ/cm2/pulse. The synthetic silica glass can exhibit excellent resistance to ultraviolet light with a wavelength of 150 to 190 nm when incorporated in a device using ultraviolet light with a wavelength of 150 to 190 nm as a light source.
摘要翻译:公开了一种合成石英玻璃,其用于波长为150至200nm的光,其具有浓度小于1ppm的OH基,浓度为1×10 16的氧过量型缺陷, SUP>缺陷/ cm 3以下,浓度小于1×10 17分子/ cm 3的氢分子, 在合成石英玻璃用具有能量密度的氙准分子灯的光照射之后的状态下,以1×10 16个/ cm 3以下的浓度桥接氧自由基 10mW / cm 2和3kJ / cm 2的光,或者具有10 2激光的光的10 / >脉冲,能量密度为10mJ / cm 2 /脉冲。 合成石英玻璃当掺入使用波长为150〜190nm的紫外光的装置中作为光源时,可以表现出优异的抗紫外线,波长为150〜190nm。
摘要:
A synthetic quartz glass for an optical member, which is to be used in an optical device employing an ArF excimer laser beam as a light source at an energy density of at most 2 mJ/cm2/pulse or in an optical device employing a KrF excimer laser beam as a light source at an energy density of at most 30 mJ/cm2/pulse, characterized in that the hydrogen molecule concentration is within a range of at least 1×1016 molecules/cm3 and less than 5×1016 molecules/cm3.
摘要翻译:一种用于光学构件的合成石英玻璃,其用于使用ArF准分子激光束作为能量密度为至多2mJ / cm 2 /脉冲的光源的光学装置中,或者在采用 KrF准分子激光束作为能量密度为至多30mJ / cm 2 /脉冲的光源,其特征在于氢分子浓度在至少1×10 16分子/ cm 3的范围内 和小于5×10 16分子/ cm 3。
摘要:
An exposure apparatus, wherein at least one of optical members constituting an exposure light source system, an illuminating optical system, a photomask and a projection optical system, is made of a synthetic quartz glass for an optical member, which has an absorption coefficient of 0.70 cm−1 or less at a wavelength of 157 nm and an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm−1.
摘要:
A process for producing a synthetic silica glass optical component which contains at least 1×1017 molecules/cm3 and has an OH concentration of at most 200 ppm and substantially no reduction type defects, by treating a synthetic silica glass having a hydrogen molecule content of less than 1×1017 molecules/cm3 at a temperature of from 300 to 600° C. in a hydrogen gas-containing atmosphere at a pressure of from 2 to 30 atms.
摘要翻译:一种合成石英玻璃光学部件的制造方法,其通过处理氢分子含量少的合成二氧化硅玻璃,其含有至少1×10 17分子/ cm 3,OH浓度为200ppm以下,基本上无还原型缺陷 在含有氢气的气氛中,在2-30atms的压力下,在300-600℃的温度下,比1×1017分子/ cm 3。