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公开(公告)号：US20120196208A1
公开(公告)日：2012-08-02
申请号：US13443108
申请日：2012-04-10
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G03F7/70316 , G03F7/70958 , G03F7/70983
摘要： Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
摘要翻译： 提供一种用于EUVL的多层反射镜，其中防止了由Ru保护层的氧化引起的反射率的劣化，以及其制备方法。 一种用于EUV光刻的多层反射镜，其包括基板，以及用于反射EUV光的反射层和用于保护反射层的保护层，其依次形成在基板上，其中反射层为Mo / Si多层反射膜， 保护层是Ru层或Ru化合物层，并且在反射层和保护层之间形成含有0.5〜25原子％的氮和75〜99.5原子％的Si的中间层。
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2.发明申请REFLECTIVE LAYER-EQUIPPED SUBSTRATE FOR EUV LITHOGRAPHY, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND PROCESS FOR PRODUCTION OF THE REFLECTIVE LAYER-EQUIPPED SUBSTRATE 有权用于EUV光刻的反射层设备衬底，用于EUV光刻的反射掩膜，用于EUV光刻的反射掩模，以及用于生产反射层的衬底的工艺公开(公告)号：US20120231378A1
公开(公告)日：2012-09-13
申请号：US13478532
申请日：2012-05-23
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G03F7/70316 , G03F7/70958 , G03F7/70983
摘要： Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
摘要翻译： 提供了防止由于Ru保护层的氧化引起的反射率的劣化的EUV掩模坯料，用于制造EUV掩模坯料的反射层的衬底以及用于制造具有反射层的衬底的工艺。 一种用于EUV光刻的反射层衬底，包括衬底，以及用于反射EUV光的反射层和用于保护反射层的保护层，其依次形成在衬底上，其中反射层是Mo / Si多层反射 膜，保护层是Ru层或Ru化合物层，并且在反射层和保护层之间形成含有0.5至25原子％的氮和75至99.5原子％的Si的中间层。
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公开(公告)号：US08580465B2
公开(公告)日：2013-11-12
申请号：US13443108
申请日：2012-04-10
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G03F7/70316 , G03F7/70958 , G03F7/70983
摘要： Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
摘要翻译： 提供一种用于EUVL的多层反射镜，其中防止了由Ru保护层的氧化引起的反射率的劣化，以及其制备方法。 一种用于EUV光刻的多层反射镜，其包括基板，以及用于反射EUV光的反射层和用于保护反射层的保护层，其依次形成在基板上，其中反射层为Mo / Si多层反射膜， 保护层是Ru层或Ru化合物层，并且在反射层和保护层之间形成含有0.5〜25原子％的氮和75〜99.5原子％的Si的中间层。
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4.发明授权Reflective layer-equipped substrate for EUV lithography, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and process for production of the reflective layer-equipped substrate 有权用于EUV光刻的反射层衬底，用于EUV光刻的反射掩模板，用于EUV光刻的反射掩模，以及用于生产反射层的衬底的工艺公开(公告)号：US08993201B2
公开(公告)日：2015-03-31
申请号：US13478532
申请日：2012-05-23
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G03F7/70316 , G03F7/70958 , G03F7/70983
摘要： Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
摘要翻译： 提供了防止由于Ru保护层的氧化引起的反射率的劣化的EUV掩模坯料，用于制造EUV掩模坯料的反射层的衬底以及用于制造具有反射层的衬底的工艺。 一种用于EUV光刻的反射层衬底，包括衬底，以及用于反射EUV光的反射层和用于保护反射层的保护层，其依次形成在衬底上，其中反射层是Mo / Si多层反射 膜，保护层是Ru层或Ru化合物层，并且在反射层和保护层之间形成含有0.5至25原子％的氮和75至99.5原子％的Si的中间层。
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5.发明授权Reflective mask blank for EUV lithography, process for producing the same and mask for EUV lithography 失效用于EUV光刻的反射掩模板，其制造方法和用于EUV光刻的掩模公开(公告)号：US08241821B2
公开(公告)日：2012-08-14
申请号：US13038429
申请日：2011-03-02
申请人： Yoshiaki Ikuta
发明人： Yoshiaki Ikuta
IPC分类号： G03F1/24
摘要： Provision of an EUV mask whereby influence of EUV reflected light from an absorber film surface in the peripheral portion of a mask pattern region is suppressed at a time of carrying out EUV lithography; an EUV mask blank to be employed for producing the above EUV mask; and a process for producing the EUV mask blank. A process for producing a reflective mask blank for EUV lithography (EUVL), comprising alternately laminating a high refractive index film and a low refractive index film on a substrate to form a multilayer reflective film for reflecting EUV light and forming an absorber layer for absorbing EUV light on the multilayer reflective film, wherein the process further comprises after formation of the above multilayer reflective film, heating a portion of a surface of the multilayer reflective film outside a portion to be a mask pattern region in a reflective mask for EUV lithography produced by employing the reflective mask blank for EUV, to reduce the reflectivity of the heated portion of the surface of the multilayer reflective film for EUV light.
摘要翻译： 在进行EUV光刻时，提供EUV掩模，从而在掩模图案区域的周边部分中抑制来自吸收膜表面的EUV反射光的影响; 用于产生上述EUV掩模的EUV掩模空白; 以及生产EUV掩模空白的方法。 一种用于制造用于EUV光刻（EUVL）的反射掩模板的方法，包括在基板上交替层叠高折射率膜和低折射率膜以形成用于反射EUV光的多层反射膜并形成用于吸收EUV的吸收层 在多层反射膜上的光，其中该方法进一步包括在形成上述多层反射膜之后，将多层反射膜的表面的一部分在作为掩模图案区域的部分外部加热到用于EUV光刻的反射掩模中，所述反射掩模由 使用EUV的反射掩模板来降低EUV光的多层反射膜的表面的加热部分的反射率。
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6.发明授权Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography 有权用于EUV光刻中使用的反射掩模板的玻璃基板的表面的平滑化方法公开(公告)号：US07712333B2
公开(公告)日：2010-05-11
申请号：US11391343
申请日：2006-03-29
申请人： Toshiyuki Uno , Yoshiaki Ikuta , Mika Yokoyama , Ken Ebihara
发明人： Toshiyuki Uno , Yoshiaki Ikuta , Mika Yokoyama , Ken Ebihara
IPC分类号： C03C17/02
CPC分类号： C03C17/02 , B82Y10/00 , B82Y40/00 , C03C17/002 , C03C17/36 , C03C17/3665 , G03F1/24
摘要： To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch.A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.
摘要翻译： 提供一种用于平滑具有诸如凹坑或划痕的凹陷缺陷的玻璃基板的表面的方法。 一种用于使其上具有凹陷缺陷的玻璃基板的表面平滑的方法，包括：通过干法沉积法在具有凹陷缺陷的玻璃基板的表面上形成膜，所述膜包括具有流体点Tf的玻璃材料 150℃以上且不高于玻璃基板的应变点Ts（℃） 并且在不低于Tf且不高于Ts的温度下加热玻璃材料的膜以使膜处于玻璃材料的膜可以流动以便掩埋凹陷缺陷的状态，随后冷却膜 从而使具有凹陷缺陷的玻璃基板的表面光滑。
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公开(公告)号：US07678511B2
公开(公告)日：2010-03-16
申请号：US11330205
申请日：2006-01-12
申请人： Yoshiaki Ikuta , Toshiyuki Uno , Ken Ebihara
发明人： Yoshiaki Ikuta , Toshiyuki Uno , Ken Ebihara
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/38 , G03F1/40 , G03F7/70708 , G21K2201/067 , Y10T428/31616
摘要： There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate.A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.
摘要翻译： 提供了具有反射层和EUV掩模坯料的基板，其可以防止颗粒在其形成期间粘附到反射层或吸收层的表面，或者通过消除反射层或吸收层之间的电连接 形成在基板的前表面上的膜和形成在基板的后表面上的膜。 具有反射层的基板，其可用于制造用于EUV光刻的反射掩模板，包括形成在与形成在其上的反射层相反的表面的后表面上的夹持层，夹持层用于卡盘并支撑基板， 静电卡盘，其中反射层与夹持层没有电连接。
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公开(公告)号：US07527695B2
公开(公告)日：2009-05-05
申请号：US11471505
申请日：2006-06-21
申请人： Yoshiaki Ikuta
发明人： Yoshiaki Ikuta
CPC分类号： H01L21/67028 , H01L21/67115
摘要： To provide a method and apparatus for cleaning a substrate to effectively remove an organic type or metallic type contaminant from a to-be-cleaned surface of a substrate by an increase in the intensity of UV light at the to-be-cleaned surface of the substrate and by an increase in the concentration of ozone O3, excited state oxygen atoms O(1D) and active oxygen.A method for cleaning a substrate by means of irradiation with UV light, wherein a second space containing a surface on the side of the substrate on which the cleaning is to be carried out (hereinafter referred to as the to-be-cleaned surface) and its vicinity, is an atmosphere comprising a gas or a liquid which generates at least one of ozone, excited state oxygen atoms and active oxygen species by the irradiation with the UV light, a first space containing a surface on the other side of the substrate (hereinafter referred to as the to-be-irradiated surface) is an atmosphere comprising a gas showing a low absorption of the UV light, and the UV light is permitted to enter via the first space into the to-be-irradiated surface of the substrate, then pass through the interior of the substrate and then be applied to the to-be-cleaned surface.
摘要翻译： 为了提供一种用于清洁基底的方法和装置，以通过增加待清洁的表面上的UV光的强度来有效地从基底的待清洁表面去除有机类型或金属型污染物 底物和臭氧O3浓度增加，激发态氧原子O（1D）和活性氧。 一种通过紫外线照射来清洗基板的方法，其中包含要在其上进行清洁的基板的一侧上的表面的第二空间（以下称为待清洁表面）和 其附近是包含通过照射紫外光而产生臭氧，激发态氧原子和活性氧中的至少一种的气体或液体的气氛，包含基板另一侧的表面的第一空间（ 以下称为待照射面）是包含显示紫外光吸收低的气体的气氛，并且允许UV光经由第一空间进入基板的被照射表面 ，然后通过基板的内部，然后施加到待清洁的表面。
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公开(公告)号：US07230695B2
公开(公告)日：2007-06-12
申请号：US10885641
申请日：2004-07-08
申请人： Yoshiaki Ikuta , Toshiyuki Uno
发明人： Yoshiaki Ikuta , Toshiyuki Uno
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/24 , G03F1/72 , G03F1/84 , G03F7/70591 , G03F7/70958 , G21K1/062 , G21K2201/067
摘要： A defect repair device includes a defect inspection unit configured to find a size of a protruding defect on a front surface of a multi-layer film having a rear surface opposite to the front surface, a calculation unit configured to calculate a repair energy so as to repair the protruding defect based on the size of the protruding defect found by the defect inspection unit, an energy supplier, and an energy controller configured to control the energy supplier to supply the repair energy calculated by the calculation unit to a portion in the multi-layer film from the rear surface of the multi-layer film so as to cause a decrease in a volume of the portion and retract the protruding defect into the multi-layer film.
摘要翻译： 缺陷修复装置包括：缺陷检查单元，被配置为在具有与前表面相对的后表面的多层膜的前表面上发现突出缺陷的尺寸;计算单元，被配置为计算修复能量，以便 基于由缺陷检查单元，能量供应器和能量控制器发现的突出缺陷的尺寸来修复突出缺陷，能量控制器被配置为控制能量供应商将由计算单元计算的修复能量提供给多维度的部分， 从多层膜的背面形成多层膜，使得该部分的体积减小并将突出缺陷缩回到多层膜中。
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公开(公告)号：US20050176572A1
公开(公告)日：2005-08-11
申请号：US10509029
申请日：2003-03-26
CPC分类号： G03F7/70958 , C03B19/1453 , C03B2201/04 , C03B2201/075 , C03B2201/21 , C03C3/06 , C03C23/0025 , C03C2201/21 , C03C2203/40 , C03C2203/50 , G02B1/02 , Y02P40/57
摘要： Disclosed is a synthetic silica glass for use with light having a wavelength of 150 to 200 nm, which has an OH group at a concentration of less than 1 ppm, an oxygen-excess type defect at a concentration of 1×1016 defects/cm3 or less, a hydrogen molecule at a concentration of less than 1×1017 molecules/cm3, and a non-bridging oxygen radical at a concentration of 1×1016 radicals/cm3 or less in the state after the synthetic silica glass is irradiated with light of a xenon excimer lamp having an energy density of 10 mW/cm2 and 3 kJ/cm2 or with light of an F2 laser by 107 pulses at an energy density of 10 mJ/cm2/pulse. The synthetic silica glass can exhibit excellent resistance to ultraviolet light with a wavelength of 150 to 190 nm when incorporated in a device using ultraviolet light with a wavelength of 150 to 190 nm as a light source.
摘要翻译： 公开了一种合成石英玻璃，其用于波长为150至200nm的光，其具有浓度小于1ppm的OH基，浓度为1×10 16的氧过量型缺陷， SUP>缺陷/ cm 3以下，浓度小于1×10 17分子/ cm 3的氢分子， 在合成石英玻璃用具有能量密度的氙准分子灯的光照射之后的状态下，以1×10 16个/ cm 3以下的浓度桥接氧自由基 10mW / cm 2和3kJ / cm 2的光，或者具有10 2激光的光的10 / >脉冲，能量密度为10mJ / cm 2 /脉冲。 合成石英玻璃当掺入使用波长为150〜190nm的紫外光的装置中作为光源时，可以表现出优异的抗紫外线，波长为150〜190nm。
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