公开(公告)号：US5676757A

公开(公告)日：1997-10-14

申请号：US628016

申请日：1996-04-04

申请人： Towl Ikeda ,  Katsumi Ishii ,  Yoji Iizuka

发明人： Towl Ikeda ,  Katsumi Ishii ,  Yoji Iizuka

IPC分类号： B01J3/03 ,  C23C14/56 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67017 ,  B01J3/03 ,  C23C14/566

摘要： There is a gap between the respective inner regions of the end face of the cylindrical side wall and the abutting portion of the top plate, which are situated inside the seal member. Even though the top plate is bent inward by atmospheric pressure when the container is decompressed to a predetermined degree of vacuum, therefore, the abutting portion thereof cannot come into contact with the inner edge of the end face of the cylindrical side wall. Thus, if decompression and exposure to atmospheric pressure are repeated to bend the cylindrical side wall repeatedly, there is no possibility of the inner edge portion of the end face of the cylindrical side wall being separated or rubbed off to produce dust. Moreover, the cylindrical side wall and top plate are joined together in the region outside the seal member. If dust is produced by the contact between the cylindrical side wall and top plate at their junctions outside the seal member, therefore, it is prevented from entering the container by the seal member. Thus, a clean atmosphere in the container cannot be contaminated by the dust.

摘要翻译： 在圆筒形侧壁的端面的各个内部区域和位于密封构件内部的顶板的抵接部分之间存在间隙。 因此，即使当容器减压到预定的真空度时顶板向内弯曲，因此其抵接部分不能与圆筒形侧壁的端面的内边缘接触。 因此，如果重复减压和暴露于大气压力以反复地弯曲圆筒形侧壁，则不会使圆柱形侧壁的端面的内边缘部分分离或摩擦而产生灰尘。 此外，圆筒形侧壁和顶板在密封构件外部的区域中接合在一起。 因此，如果在密封部件外侧的接合处产生圆筒形侧壁和顶板之间的灰尘，则可防止密封件进入容器。 因此，容器中的清洁气氛不会被灰尘污染。

公开(公告)号：US5520142A

公开(公告)日：1996-05-28

申请号：US409427

申请日：1995-03-24

申请人： Towl Ikeda ,  Katsumi Ishii ,  Yoji Iizuka

发明人： Towl Ikeda ,  Katsumi Ishii ,  Yoji Iizuka

IPC分类号： B01J3/03 ,  C23C14/00 ,  C23C14/56 ,  C23C16/44 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01L21/67017 ,  B01J3/03 ,  C23C14/564 ,  C23C16/4401

摘要： A gap is defined between an inner region of an end face of a first container member of a container and an inner region of an abutting portion of a second container member, the inner regions being situated inside a seal member. The respective inner regions of the end face of the first container member and the abutting portion of the second container member, which are situated inside the seal member, are prevented from coming into contact with each other when the interior of the container is decompressed. Even though the second container member is bent inward by atmospheric pressure when the container is decompressed to a predetermined degree of vacuum, therefore, the abutting portion thereof cannot come into contact with the inner edge of the end face of the first container member. Thus, if decompression and exposure to atmospheric pressure are repeated to bend the container member repeatedly, there is no possibility of the inner edge portion of the end face of the first container member being separated or rubbed off to produce dust.

摘要翻译： 在容器的第一容器构件的端面的内部区域和第二容器构件的抵接部的内部区域之间限定有间隙，内部区域位于密封构件的内部。 当容器内部减压时，防止位于密封构件内部的第一容器构件的端面的各个内部区域和第二容器构件的抵接部分彼此接触。 因此，即使当容器减压至预定的真空度时第二容器构件向内弯曲，因此其抵接部分不能与第一容器构件的端面的内边缘接触。 因此，如果重复减压和暴露于大气压力以反复地使容器构件弯曲，则不会使第一容器构件的端面的内边缘部分分离或摩擦而产生灰尘。

公开(公告)号：US5240556A

公开(公告)日：1993-08-31

申请号：US893018

申请日：1992-06-03

申请人： Yoshio Ishikawa ,  Junichi Arami ,  Towl Ikeda ,  Teruo Iwata

发明人： Yoshio Ishikawa ,  Junichi Arami ,  Towl Ikeda ,  Teruo Iwata

IPC分类号： C23C16/54 ,  H01L21/00

CPC分类号： H01L21/67207 ,  C23C16/54 ,  H01L21/67069 ,  H01L21/67115

摘要： According to this invention, a surface-treating apparatus capable of etching an object to be treated with high accuracy, suppressing discharging of a harmful gas deposited on the etched object in the air, and preventing the surface of the object from deposition/ attachment of reaction products and droplets is disclosed. The surface-treating apparatus includes a first process chamber for etching a loaded object to be treated by an activated etching gas, an exhausting member for setting the first process chamber at a low pressure, a cooling means for cooling the object loaded in the first process chamber, a second process chamber in which the object etched by the first process chamber is loaded, an exhausting member for setting the second process chamber at a low pressure, and an heating member for annealing the object loaded in the second process chamber.

摘要翻译： 根据本发明，能够高精度地蚀刻被处理物的表面处理装置，抑制在空气中沉积在被蚀刻物上的有害气体的排出，防止物体的表面沉积/附着反应 产品和液滴被公开。 表面处理装置包括用于蚀刻被激活的蚀刻气体处理的被加载物体的第一处理室，用于将第一处理室设置在低压的排出构件，用于冷却在第一处理中加载的物体的冷却装置 第二处理室，其中装载有由第一处理室蚀刻的物体，用于将第二处理室设置在低压的排气构件，以及用于对装载在第二处理室中的物体进行退火的加热构件。

公开(公告)号：US5455082A

公开(公告)日：1995-10-03

申请号：US187723

申请日：1994-01-28

申请人： Masasi Saito ,  Teruo Iwata ,  Nobuo Ishii ,  Towl Ikeda ,  Hiroaki Saeki

发明人： Masasi Saito ,  Teruo Iwata ,  Nobuo Ishii ,  Towl Ikeda ,  Hiroaki Saeki

IPC分类号： C23C14/56 ,  H01L21/00 ,  B05D3/06 ,  C23C16/00

CPC分类号： H01L21/67213 ,  C23C14/566 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67173 ,  H01L21/67201 ,  H01L21/67276

摘要： A reduced pressure processing system includes a load lock chamber having an opening communicating with a process atmosphere in which a wafer is processed and/or the outer air atmosphere, a gate valve which is arranged at the opening to close/open the chamber with respect to the process atmosphere and/or the outer air atmosphere, a robot for loading/unloading the wafer into/from the chamber, an evacuation pump for evacuating the chamber, a heater for heating the wall of the chamber, and a controller for controlling the gate valve, the robot, the evacuation pump, and the heater.

摘要翻译： 减压处理系统包括：负载锁定室，具有与处理晶片进行处理的处理气氛和/或外部空气气氛连通的开口;闸阀，其布置在开口处，以关闭/打开室 处理气氛和/或外部空气气氛，用于将晶片装入/从室中卸载的机器人，用于抽空室的抽空泵，用于加热室壁的加热器，以及用于控制门的控制器 阀门，机器人，排气泵和加热器。

公开(公告)号：US5061894A

公开(公告)日：1991-10-29

申请号：US633254

申请日：1990-12-21

申请人： Towl Ikeda

发明人： Towl Ikeda

IPC分类号： G01R1/073

CPC分类号： G01R1/0735

摘要： A probe device for measuring the electric characteristics of an IC chip on a wafer, etc. is disclosed. The probe device includes a unit having a micro-strip line structure in which a plurality of probes are integrally formed. The unit comprises a flexible insulating quartz base plate, a plurality of mutually insulated lead strips provided on one surface of the base plate, and a ground strip provided on the other surface of the base plate. Notches are formed in those regions of the insulating base plate, which are located between the lead strips at an end portion of the unit. The unit is supported such that the tip end portion of the unit is formed as a free-end portion and the unit is inclined by a predetermined angle toward electrode pads on the IC chip with respect to an imaginary horizontal plane. The combination of each of the lead strip, the insulating quartz base plate and the ground strip constitute a micro-strip line. At the tip end portion of the unit, each micro-strip line serves as the probe. A tip portion of each lead strip serves as a contact of the probe.

摘要翻译： 公开了一种用于测量晶片上的IC芯片的电特性的探针装置等。 探针装置包括具有多个探针一体形成的微带线结构的单元。 该单元包括柔性绝缘石英基板，设置在基板的一个表面上的多个相互绝缘的引线条和设置在基板的另一个表面上的接地条。 在绝缘基板的位于该单元的端部的引线条之间的那些区域中形成有凹口。 该单元被支撑为使得单元的前端部形成为自由端部，并且该单元相对于假想水平面向IC芯片上的电极焊盘倾斜预定角度。 每个引线条，绝缘石英基板和接地条的组合构成微带线。 在该单元的末端部，每个微带线用作探针。 每个引线条的尖端部分用作探针的接触点。

公开(公告)号：US6033479A

公开(公告)日：2000-03-07

申请号：US64401

申请日：1998-04-22

申请人： Towl Ikeda

发明人： Towl Ikeda

IPC分类号： B08B9/02 ,  B08B9/032 ,  C23C16/44 ,  C23C16/448

CPC分类号： B08B9/032 ,  C23C16/4407 ,  C23C16/4482

摘要： A process gas delivery system incorporating a cleaning solution delivery subsystem for chemical vapor deposition. The system includes a slanted cleaning solution feed pipe for introducing a cleaning solution into the process gas delivery system and for disposal of waste cleaning solution from the process gas delivery system. Automatic determination of maintenance time may be accomplished by using an optical sensor provided on the process gas delivery pipe that detects the accumulation of the deposition material within the piping. The sensor may also be used to detect the cleaning solution residue inside the piping after cleaning and the liquid level during deposition.

摘要翻译： 一种包含用于化学气相沉积的清洁溶液输送子系统的工艺气体输送系统。 该系统包括用于将清洁溶液引入工艺气体输送系统中并用于从处理气体输送系统处理废物清洁溶液的倾斜的清洁溶液进料管。 维护时间的自动确定可以通过使用设置在处理气体输送管上的光学传感器来实现，其检测沉积材料在管道内的积聚。 传感器也可用于检测清洗后管道内的清洁液残留物和沉积过程中的液面。

公开(公告)号：US5433780A

公开(公告)日：1995-07-18

申请号：US154563

申请日：1993-11-19

申请人： Towl Ikeda ,  Teruo Iwata

发明人： Towl Ikeda ,  Teruo Iwata

IPC分类号： C23C14/56 ,  C23C16/44 ,  H01L21/00 ,  H01L21/677 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/67739 ,  C23C14/564 ,  C23C16/4412 ,  H01L21/67017

摘要： A vacuum processing apparatus comprises a vacuum processing chamber for subjecting an object to be processed to a predetermined vacuum processing, an auxiliary vacuum chamber whose internal pressure is variable repeatedly between an atmospheric pressure and a process pressure, when the object is put in and taken out of the vacuum processing chamber, and exhaust system for exhausting a gas from the auxiliary vacuum chamber. The exhaust system has at least one exhaust port located apart from an internal wall surface of the auxiliary vacuum chamber.

摘要翻译： 真空处理装置包括：真空处理室，用于对待处理的物体进行预定的真空处理;辅助真空室，其内部压力在大气压和过程压力之间反复变化，当物体被放入和取出时 的真空处理室，以及用于从辅助真空室排出气体的排气系统。 排气系统具有至少一个与辅助真空室的内壁表面分开的排气口。

公开(公告)号：US5730804A

公开(公告)日：1998-03-24

申请号：US772570

申请日：1996-12-26

申请人： Hisashi Gomi ,  Masahide Itoh ,  Shimpei Jinnouchi ,  Towl Ikeda

发明人： Hisashi Gomi ,  Masahide Itoh ,  Shimpei Jinnouchi ,  Towl Ikeda

IPC分类号： B01J4/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  F17C7/04 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/304 ,  C23C16/00

CPC分类号： C23C16/4408 ,  B01J4/00 ,  C23C16/4407 ,  C23C16/4481 ,  C23C16/52 ,  F17C7/04 ,  F17C2221/012 ,  F17C2221/016 ,  F17C2223/0153 ,  F17C2227/044 ,  F17C2250/032 ,  F17C2250/043 ,  F17C2250/0636 ,  F17C2270/0518 ,  Y02E60/321

摘要： A process gas supply apparatus according to the invention comprises a supply pipe line connecting a supply source containing an organic aluminum metallic compound in a liquid state, to a process device for forming a film on an object using the organic aluminum metallic compound, a force-feed device for force-feeding, through the supply pipe line, the organic aluminum metallic compound contained in the supply source, a vaporizing device provided across the supply pipe line for vaporizing the force-fed organic aluminum metallic compound of the liquid state, a purge gas introduction device connected to the supply pipe line for introducing a pressurized purge gas into the supply pipe line, a solvent introduction device connected to the supply pipe line for introducing into the supply pipe line a solvent for dissolving the organic aluminum metallic compound, an exhaustion device connected to the supply pipe line for exhausting the supply pipe line by a negative pressure, and a control device having a plurality of valves arranged across the supply pipe line, and controlling the flow of fluids flowing through the supply pipe line by opening and closing the valves.

摘要翻译： 根据本发明的工艺气体供给装置包括：将含有液态的有机铝金属化合物的供给源与使用有机铝金属化合物在物体上形成膜的处理装置连接的供给管线， 用于强制供给的供给装置，通过供给管线，包含在供给源中的有机铝金属化合物，设置在供给管路两侧的用于使强制供给的液态有机铝金属化合物蒸发的蒸发装置，吹扫 气体引入装置，连接到供给管线，用于将加压的净化气体引入供给管线;溶剂引入装置，连接到供给管线，用于向供给管线引入用于溶解有机铝金属化合物的溶剂， 连接到供给管线的装置，用于通过负压排出供给管线，以及控制装置 e具有跨过供给管线布置的多个阀，并且通过打开和关闭阀来控制流过供给管线的流体的流动。

公开(公告)号：US5314541A

公开(公告)日：1994-05-24

申请号：US889378

申请日：1992-05-28

申请人： Masasi Saito ,  Teruo Iwata ,  Nobuo Ishii ,  Towl Ikeda ,  Hiroaki Saeki

发明人： Masasi Saito ,  Teruo Iwata ,  Nobuo Ishii ,  Towl Ikeda ,  Hiroaki Saeki

IPC分类号： C23C14/56 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67213 ,  C23C14/566 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67173 ,  H01L21/67201 ,  H01L21/67276

摘要： A reduced pressure processing system includes a load lock chamber having an opening communicating with a process atmosphere in which a wafer is processed and/or the outer air atmosphere, a gate valve which is arranged at the opening to close/open the chamber with respect to the process atmosphere and/or the outer air atmosphere, a robot for loading/unloading the wafer into/from the chamber, an evacuation pump for evacuating the chamber, a heater for heating the wall of the chamber, and a controller for controlling the gate valve, the robot, the evacuation pump, and the heater.

摘要翻译： 减压处理系统包括：负载锁定室，具有与处理晶片进行处理的处理气氛和/或外部空气气氛连通的开口;闸阀，其布置在开口处，以关闭/打开室 处理气氛和/或外部空气气氛，用于将晶片装入/从室中卸载的机器人，用于抽空室的抽空泵，用于加热室壁的加热器和用于控制门的控制器 阀门，机器人，排气泵和加热器。

公开(公告)号：US5091694A

公开(公告)日：1992-02-25

申请号：US472228

申请日：1990-01-30

申请人： Towl Ikeda ,  Hisashi Koike

发明人： Towl Ikeda ,  Hisashi Koike

IPC分类号： G01R1/073

CPC分类号： G01R1/07342

摘要： A quartz probe apparatus having a plurality of quartz probe bodies and a metal pattern layer formed on each of the quartz probe bodies. A plurality of quartz probe bodies integrally incorporate a microprobe portion including a number of microprobes corresponding to electrode arrays of an object of examination, a pattern wiring portion connected with the microprobe portion, and an electrode pad portion connected with the pattern wiring portion. A plurality of quartz probe bodies are formed by etching a Z-plane of a quartz plate perpendicular to the crystal axis Z thereof.

摘要翻译： 一种石英探针装置，具有形成在每个石英探针体上的多个石英探针体和金属图案层。 多个石英探针体一体地结合有包括与检查对象的电极阵列相对应的多个微针的微探针部分，与该微探针部连接的图形布线部以及与图案布线部连接的电极焊盘部。 通过蚀刻垂直于其晶轴Z的石英板的Z平面形成多个石英探针体。