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公开(公告)号：US11602741B2
公开(公告)日：2023-03-14
申请号：US17398412
申请日：2021-08-10
发明人： Ying-Cheng Wang , Yuan-Hao Jin , Xiao-Yang Xiao , Tian-Fu Zhang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B01J35/00 , B01J21/18 , B01J23/52 , B01J23/50 , B01J23/72 , B01J23/745 , B01J23/755 , B01J21/02 , B01J21/06 , B01J23/06 , B01J23/14 , B01J27/04 , B01J37/02 , B01J37/08 , B01J37/34 , C25B1/55
摘要： The disclosure relates to a method for making a photocatalytic structure, the method comprising: providing a carbon nanotube structure comprising a plurality of carbon nanotubes intersected with each other; a plurality of openings being defined by the plurality of carbon nanotubes; forming a photocatalytic active layer on the surface of the carbon nanotube structure; applying a metal layer pre-form on the surface of the photocatalytic active layer; and annealing the metal layer pre-form.
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公开(公告)号：US10297696B2
公开(公告)日：2019-05-21
申请号：US15846222
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/47 , H01L51/00 , H01L29/00 , H01L29/87 , H01L29/16 , H01L29/66 , H01L51/05 , H01L29/872 , H01L29/24 , H01L29/20 , H01L29/04 , H01L21/28 , H01L29/06 , B82Y10/00 , H01L29/49 , H01L29/786 , H01L29/775
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.
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公开(公告)号：US10199513B2
公开(公告)日：2019-02-05
申请号：US15846224
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L51/00 , H01L51/05 , H01L29/87 , H01L27/08 , H01L29/47 , H01L29/49 , H01L29/06 , H01L29/872 , H01L29/20 , H01L29/16 , H01L29/04 , H01L29/417 , H01L29/24 , H01L29/786
摘要： A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure is a nano-scale semiconductor structure.
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公开(公告)号：US12054393B2
公开(公告)日：2024-08-06
申请号：US17206774
申请日：2021-03-19
发明人： Tian-Fu Zhang , Li-Hui Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C01B32/188 , C01B32/196 , B82Y40/00
CPC分类号： C01B32/188 , C01B32/196 , B82Y40/00 , C01B2204/06 , C01B2204/32
摘要： A method for making a graphene nanoribbon composite structure includes providing a substrate including a plurality of protrusions spaced apart from each other. A graphene film is grown on a growth substrate, an adhesive layer is on a surface of the graphene film away from the growth substrate. After removing the growth substrate, the graphene film and the adhesive layer are cleaned with water or an organic solvent. The graphene film, the adhesive layer, and the substrate are combined and then are dried, so that a plurality of wrinkles are formed near the plurality of protrusions. The adhesive layer is removed, and after etching a surface of the graphene film away from the substrate, the graphene films except for the plurality of wrinkles are removed, to form a plurality of graphene nanoribbons.
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公开(公告)号：US10483472B2
公开(公告)日：2019-11-19
申请号：US15846213
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.
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公开(公告)号：US10381585B2
公开(公告)日：2019-08-13
申请号：US15846215
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
摘要： A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.
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公开(公告)号：US10347854B2
公开(公告)日：2019-07-09
申请号：US15817534
申请日：2017-11-20
发明人： Yu-Dan Zhao , Yu-Jia Huo , Xiao-Yang Xiao , Ying-Cheng Wang , Tian-Fu Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L51/05 , H01L29/786 , H01L21/285 , H01L27/12 , H01L27/32 , H01L51/00 , H01L29/16 , H01L29/24 , H03K19/094 , H01L27/06
摘要： The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.
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公开(公告)号：US11264516B2
公开(公告)日：2022-03-01
申请号：US15846218
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/06 , H01L29/08 , H01L29/872 , H01L51/05 , H01L51/00 , H01L51/10 , H01L29/24 , H01L29/417 , H01L29/49 , B82Y10/00 , H01L29/775
摘要： A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a nano-scale semiconductor structure. The second electrode is located on the second end.
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公开(公告)号：US10680119B2
公开(公告)日：2020-06-09
申请号：US16239580
申请日：2019-01-04
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/87 , H01L29/66 , H01L51/00 , H01L29/872 , H01L29/24 , H01L29/20 , H01L29/16 , H01L29/04 , H01L51/05 , H01L21/28 , H01L29/06 , B82Y10/00 , H01L29/49 , H01L29/786 , H01L29/47 , H01L29/775
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.
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公开(公告)号：US10374180B2
公开(公告)日：2019-08-06
申请号：US15846217
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/06 , H01L29/16 , H01L29/20 , H01L29/24 , H01L29/49 , H01L51/00 , H01L51/05 , H01L51/10 , H01L29/417 , H01L29/775 , H01L29/872 , B82Y10/00
摘要： A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.
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