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    Manufacturing method of a semiconductor device having a diffraction grating
    5.
    发明授权
    Manufacturing method of a semiconductor device having a diffraction grating 有权
    具有衍射光栅的半导体器件的制造方法

    公开(公告)号：US06376338B2

    公开(公告)日：2002-04-23

    申请号：US09227262

    申请日：1999-01-08

    申请人： Mitsuru Ekawa ,  Takuya Fujii ,  Yuji Kotaki ,  Manabu Matsuda

    发明人： Mitsuru Ekawa ,  Takuya Fujii ,  Yuji Kotaki ,  Manabu Matsuda

    IPC分类号： H01L2120

    CPC分类号： B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/34306 ,  H01S5/3434

    摘要： A first layer of InP is deposited on a diffraction grating so as to cover it, by MOCVD in which PH3 or organophosphorus is used as a source material of P and in which H2 is used as a carrier gas. The substrate is heated up to a temperature which is higher than the substrate temperature during the first layer deposition, and then a second layer is deposited on the first layer. An active layer is deposited on the second layer. Found out is such a growth rate of an InP layer as to cause the photoluminescence intensity of a layer corresponding to the active layer to be one tenth as small as that when the InP layer is deposited at a growth rate of 0.2 microns per hour in the case where the InP layer deposition is carried out instead of the first layer deposition under the conditions wherein the ratio of the flow rate of the source material of P to the total flow rate of the carrier gas and the substrate temperature are the same as those in the first layer deposition but the growth rate of the InP layer is different from that of the first layer. The growth rate of the first layer is lower than such a growth rate of the InP layer as to cause the photoluminescence intensity to be one tenth. Accordingly, a diffraction grating can be formed with excellent reproductiveness and high accuracy, moreover, a high quality semiconductor layer can be deposited on thus formed diffraction grating.

    摘要翻译： 通过使用PH3或有机磷作为P的源材料并且其中H 2用作载气的MOCVD，将第一层InP沉积在衍射光栅上以覆盖它。 在第一层沉积期间将衬底加热到​​高于衬底温度的温度，然后在第一层上沉积第二层。 活性层沉积在第二层上。 发现InP层的这种生长速率是使得对应于有源层的层的光致发光强度为当InP层以0.2微米/小时的生长速率沉积时的光致发光强度的十分之一 在P的源材料与载气的总流量与基板温度的比率与基板温度相同的条件下，进行InP层的沉积而不是第一层沉积的情况下， 第一层沉积，但InP层的生长速率与第一层不同。 第一层的生长速率低于InP层的生长速率，导致光致发光强度为十分之一。 因此，可以形成具有优异的再现性和高精度的衍射光栅，此外，可以在这样形成的衍射光栅上沉积高质量的半导体层。

    Semiconductor optical integrated device and method for fabricating the same
    7.
    发明授权
    Semiconductor optical integrated device and method for fabricating the same 有权
    半导体光学集成器件及其制造方法

    公开(公告)号：US08565279B2

    公开(公告)日：2013-10-22

    申请号：US13611099

    申请日：2012-09-12

    申请人： Shigekazu Okumura ,  Mitsuru Ekawa ,  Shuichi Tomabechi ,  Ayahito Uetake

    发明人： Shigekazu Okumura ,  Mitsuru Ekawa ,  Shuichi Tomabechi ,  Ayahito Uetake

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2081 ,  B82Y20/00 ,  H01S5/02288 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34306

    摘要： A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.

    摘要翻译： 半导体光学集成器件包括形成在衬底的（001）平面上的第一半导体光学器件和第二半导体光学器件，所述第二半导体光学器件形成在从第一半导体光学器件（110）取向的衬底的（001）面上 并且其光学连接到第一半导体光学器件。 第一半导体光学器件包括第一芯层和第一覆层，其形成在第一芯层上，并且在第二半导体光学器件侧上具有形成角度θ大于或等于55°的一侧的晶体表面 度和小于或等于90度与（001）面。

    Optical semiconductor device
    8.
    发明授权
    Optical semiconductor device 有权
    光半导体器件

    公开(公告)号：US07924896B2

    公开(公告)日：2011-04-12

    申请号：US12234161

    申请日：2008-09-19

    申请人： Tsuyoshi Yamamoto ,  Manabu Matsuda ,  Mitsuru Ekawa ,  Kan Takada ,  Shigekazu Okumura

    发明人： Tsuyoshi Yamamoto ,  Manabu Matsuda ,  Mitsuru Ekawa ,  Kan Takada ,  Shigekazu Okumura

    IPC分类号： H01S3/04

    CPC分类号： H01S5/227

    摘要： An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.

    摘要翻译： 一种光学半导体器件，包括有源层，形成在有源层上方并由含有Al的半导体材料制成的第一半导体层，形成在第一半导体层上方的第二半导体层，并由不含任何一种 Al和P，并且其带隙大于有源层的带隙;以及第三半导体层，其形成在第二半导体层上方并由不含Al但包含P的半导体材料制成。第二半导体层形成为 第一半导体层和第三半导体层彼此不接触。

    Optical semiconductor device and fabrication method thereof
    9.
    发明授权
    Optical semiconductor device and fabrication method thereof 失效
    光半导体器件及其制造方法

    公开(公告)号：US07482617B2

    公开(公告)日：2009-01-27

    申请号：US11244387

    申请日：2005-10-06

    申请人： Tsuyoshi Yamamoto ,  Mitsuru Ekawa

    发明人： Tsuyoshi Yamamoto ,  Mitsuru Ekawa

    IPC分类号： H01L29/06 ,  H01L21/00

    CPC分类号： B82Y20/00 ,  H01S5/2205 ,  H01S5/227 ,  H01S5/34313 ,  H01S5/34366

    摘要： In order to prevent As/P replacement at the boundary face of a re-grown semiconductor layer and avoid a crystalline defect caused by the replacement, there is provided an optical semiconductor device comprising: a semiconductor substrate; a striped stacking body including a first semiconductor layer, an active layer, and a second semiconductor layer; and a burying layer burying the striped stacking body striped stacking body, wherein surfaces in contact with a side face and a bottom face of the burying layer are made of a compound semiconductor that contains arsenic (As) alone as a group V element, and a portion other than the surface includes a group V element other than arsenic.

    摘要翻译： 为了防止在再生长的半导体层的边界面处的As / P置换，并且避免由替换引起的晶体缺陷，提供了一种光学半导体器件，包括：半导体衬底; 包括第一半导体层，有源层和第二半导体层的条纹堆叠体; 以及掩埋层状堆叠体条纹叠层体的掩埋层，其中与掩埋层的侧面和底面接触的表面由仅含有砷（As）作为V族元素的化合物半导体构成， 除了表面之外的部分包括除砷以外的第V族元素。

    SEMICONDUCTOR OPTICAL INTEGRATED DEVICE AND METHOD FOR FABRICATING THE SAME
    10.
    发明申请
    SEMICONDUCTOR OPTICAL INTEGRATED DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体光学集成器件及其制造方法

    公开(公告)号：US20130010824A1

    公开(公告)日：2013-01-10

    申请号：US13611099

    申请日：2012-09-12

    申请人： Shigekazu OKUMURA ,  Mitsuru Ekawa ,  Shuichi Tomabechi ,  Ayahito Uetake

    发明人： Shigekazu OKUMURA ,  Mitsuru Ekawa ,  Shuichi Tomabechi ,  Ayahito Uetake

    IPC分类号： H01S5/02 ,  H01L33/02

    CPC分类号： H01S5/2081 ,  B82Y20/00 ,  H01S5/02288 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34306

    摘要： A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.

    摘要翻译： 半导体光学集成器件包括形成在衬底的（001）平面上的第一半导体光学器件和第二半导体光学器件，所述第二半导体光学器件形成在从第一半导体光学器件（110）取向的衬底的（001）面上 并且其光学连接到第一半导体光学器件。 第一半导体光学器件包括第一芯层和形成在第一芯层上并且在形成角度的第二半导体光学器件侧的侧面上的晶体表面的第一覆盖层; 大于或等于55度且小于或等于90度与（001）面。