摘要:
A method of growing a single crystal of KTiOPO.sub.4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO.sub.4 is carried out by melting a KTiOPO.sub.4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K.sub.2 O, P.sub.2 O.sub.5 and TiO.sub.2 contained in the melt fall within a region surrounded by six point in a K.sub.2 O-P.sub.2 O.sub.5 -TiO.sub.2 ternary phase diagram of A (K.sub.2 O:0.4150, P.sub.2 O.sub.5 :0.3906, TiO.sub.2 : 0.1944), B (K.sub.2 O:0.3750, P.sub.2 O.sub.5 : 0.3565, TiO.sub.2 : 0.2685), C (K.sub.2 O: 0.3750, P.sub.2 O.sub.5 : 0.3438, TiO.sub.2 : 0.2813), D (K.sub.2 O: 0.3850, P.sub.2 O.sub.5 : 0.3260, TiO.sub.2 : 0.2890), E (K.sub.2 O: 0.4000, P.sub.2 O.sub.5 : 0.3344, TiO.sub.2 : 0.2656), and F (K.sub.2 O: 0.4158, P.sub.2 O.sub.5 : 0.3744, TiO.sub.2 : 0.2098). In addition, K.sub.15 P.sub.13 O.sub.40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO.sub.4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol %. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO.sub.4 of single domain at the end of growth can be produced.
摘要翻译:公开了一种生长作为非线性光学材料的KTiOPO4单晶的方法。 通过用助熔剂熔化KTiOPO 4材料以产生熔体,然后使晶种接触熔体,并通过在饱和温度或更低温度下缓慢冷却来进行KTiOPO4单晶的生长。 此时,K2O,P2O5和TiO 2的摩尔分数在A(K2O:0.4150,P2O5:0.3906,TiO 2:0.1944),K 2 O 3的K 2 O 5 - (K2O:0.3750,P2O5:0.3565,TiO2:0.2685),C(K2O:0.3750,P2O5:0.3438,TiO2:0.2813),D(K2O:0.3850,P2O5:0.3260,TiO2:0.2890),E(K2O: P 2 O 5:0.3344,TiO 2:0.2656)和F(K 2 O:0.4158,P 2 O 5:0.3744,TiO 2:0.2098)。 此外,将K15P13O40或通过熔融制造的相同组成用作助熔剂,并且将熔体组成中的KTiOPO 4元素的比例规定为83.5〜90.0mol%。 晶种被设定为使得C轴在垂直于熔体表面的方向上。 然后,将与熔体接触的晶种旋转并缓慢冷却。 因此,可以生产在生长结束时单畴KTiOPO4的单晶。
摘要:
Disclosed is a method for the growth of a single crystal having excellent crystallinity, uniform quality in the inside thereof and hence excellently uniform optical properties, the method enabling an improvement in yields. The invention resides in a method for the growth of a single crystal of &bgr;-type barium borate (&bgr;-BaB2O4), the method comprising heating a crucible 6 indirectly to grow a &bgr;-BaB2O4 single crystal 21 from a melt of barium borate (BaB2O4) contained in the crucible and using no flux by using a seed crystal 9 of &bgr;-BaB2O4.
摘要翻译:公开了一种生长具有优异结晶性,在其内部质量均匀且因此具有优异均匀的光学性能的单晶的方法,该方法能够提高产量。 本发明涉及一种用于生长β型硼酸钡(β-BaB 2 O 4)的单晶的方法,该方法包括间接加热坩埚6以从硼酸钡(BaB 2 O 4)的熔体中生长β-BaB 2 O 4单晶21 ),并且通过使用β-BaB 2 O 4的晶种9不使用助熔剂。
摘要:
A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.
摘要:
A laser beam generating apparatus comprising a first laser beam source oscillating in a near infrared-ray region of, for example, an Nd:YAG laser to generate a laser beam, a second higher harmonic wave generator for generating, from the laser beam emitted from the first laser beam source, a second higher harmonic wave having a half wavelength of the laser beam emitted from the first laser beam source, a splitter for splitting the second higher harmonic wave, a second laser beam source which is supplied with a part of the second higher harmonic wave thus split is input to a Ti:Sapphire laser to be excited and oscillated, thereby generating a laser beam of substantially 700 nm in wavelength, a fourth higher harmonic wave generator for generating a fourth higher harmonic wave from the remaining part of the second higher harmonic wave thus split, a sum frequency mixing composed of a BBO crystal device to which the laser beam of substantially 700 nm in wavelength and the fourth higher harmonic wave are input, and a controller for controlling the temperature of the BBO crystal device to substantially 100K or less, thereby generating a laser beam of substantially 193 nm in wavelength as an output of the sum frequency mixing.
摘要:
The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
摘要:
An antireflection film capable of reliably preventing light (or laser light), which is incident on a glass substrate and which reaches a metal film, from being reflected by the metal film. The antireflection film provided between a metal film having a complex refractive index represented by NM=nM−i·km and a glass substrate having a refractive index NG includes, from the metal film side: (A) a first dielectric layer having a refractive index N1; (B) a second dielectric layer provided on the first dielectric layer and having a refractive index N2; and (C) a third dielectric layer provided on the second dielectric layer and having a refractive index N3, in which N1 NG, N2 NG hold. Accordingly, light which is incident on the glass substrate and which reaches the metal film is prevented from being reflected by the metal film.
摘要:
There is provided an antireflection film capable of reliably preventing light (or laser light), which is incident on a glass substrate and which reaches a metal film, from being reflected by the metal film. The antireflection film provided between a metal film having a complex refractive index represented by NM=nM−i·km and a glass substrate having a refractive index NG includes, from the metal film side: (A) a first dielectric layer having a refractive index N1; (B) a second dielectric layer provided on the first dielectric layer and having a refractive index N2; and (C) a third dielectric layer provided on the second dielectric layer and having a refractive index N3, in which N1 NG, N2 NG hold. Accordingly, light which is incident on the glass substrate and which reaches the metal film is prevented from being reflected by the metal film.
摘要翻译:提供了能够可靠地防止入射到玻璃基板上并且到达金属膜的光(或激光)被金属膜反射的抗反射膜。 该反射防止膜设置在具有由N M M = N M-M m N N表示的复折射率的金属膜和具有 折射率N&lt; N&gt;包括从金属膜侧:(A)具有折射率N 1的第一介电层; (B)设置在第一电介质层上并具有折射率N 2的第二电介质层; 和(C)设置在所述第二电介质层上并具有折射率N 3 N 3的第三电介质层,其中N 1 < N 1,N 2,N 3,N 3,N 3,N 3,N 3, >> N G>保持。 因此,防止入射到玻璃基板上并到达金属膜的光被金属膜反射。
摘要:
A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.
摘要:
Signals are provided which allow colors in a wider color range than predetermined standards, which can be handled by apparatus according to such predetermined standards. A primary color converter converts first color signals having primary color points in a wider color range than the primary color points according to BT.709 into second color signals based on the primary colors according to BT.709. A photoelectric transducer converts the second color signals into third color signals according to photoelectric transducer characteristics defined in a numerical range wider than a range from 0 to 1.0 of color signals corresponding to a luminance signal and color difference signals according to BT.709. A color signal converter converts the third color signals into a luminance signal and color difference signals. A corrector incorporated in the color signal converter corrects the color difference signals into color difference signals.
摘要:
There is provided a lens formed from a circular bottom face (11), lateral face (14) and top face (15) and having a surface light source (13) of a finite size disposed at the center of the bottom face (11). The top face (15) is an aspheric surface rotational symmetric with respect to a z-axis and which totally reflects a part of a component, whose polar angle is smaller than a polar angle Θ0 at the intersection between the lateral face (14) and top face (15), of light emitted from the surface light source (13). The lateral face (14) is an aspheric surface rotational symmetric with respect to the z-axis and pervious to a component, whose polar angle is larger than the polar angle Θ0, and component, totally reflected at the top face (15), of the light emitted from the surface light source (13). A function r=fS(z) where z is a variable representing the lateral face (14) increases monotonously as the variable z decreases in a closed zone defined by 0≦z≦z1 (z-coordinate of an intersection between the lateral face (14) and top face (15)), and has at least one point where a absolute value |d2r/dz2| is maximum in the closed zone.