摘要:
A development system which includes a flexible donor belt having groups of electrode array near the surface of the belt is disclosed. The Electrode array has group areas in which perform the function of: Loading; Transferring; Developing; Transferring and Unloading. Each electrode array group area is independently addressable and operatively connected to voltage source in order to supply a voltage in the order of .quadrature.0-1000 volts AC or DC to each group area. The electrodes array group area picks up the toner from the magnetic brush. An electrode array group area connected to the voltage source via phase shifting circuitry such that a traveling wave pattern is established. The electrostatic field forming the traveling wave pattern pushes the charged toner particles about the surface of the donor belt from the magnetic brush to the photoconductive belt where they are transferred to the latent electrostatic images on the belt by an electrode group area which generates a toner cloud in the development zone. Thereafter, toner is moved by an electrode array group area where an electrode group area is bias to unload remaining toner off the belt.
摘要:
An apparatus for transporting charged particles in a predetermine path which includes a donor member that is adapted to move charged particles on the surface thereof in the predetermined path. The donor member includes an electrode array on the outer surface thereof; the array including a plurality of spaced apart electrodes extending substantially across width of the surface of the donor member. A multi-phase DC voltage source is operatively coupled to the electrode array, the phase being shifted with respect to each other such as to create an electrodynamic wave pattern capable of moving charged particles on the surface thereof in the predetermined path.
摘要:
High voltage circuitry often requires assembling an array of high voltage devices that are electrically isolated from one another. A lead frame that fits within conventional plastic packaging has been designed that will allow electrical isolation of the substrates of two or more transistors mounted together in a single package.
摘要:
The present invention includes processes and packaging for high voltage integrated circuits (ICs), high voltage electronic devices and high voltage electronic circuits which operate over a wide range of voltages, e.g., from tens of volts to tens of thousands of volts. The inventive processes and packaging are particularly suitable for integrating low or lower voltage circuits or transistors to form high voltage ICs, high voltage electronic devices and high voltage electronic circuits. The inventive processes and packaging are also particularly suitable for isolating high voltage electronics to achieve high breakdown voltages and for supporting high voltage operation. The inventive processes may be used with any suitable semiconductor materials using conventional semiconductor fabrication and related facilities.
摘要:
An exemplary embodiment of an apparatus for supplying and switching power may include a power source, a transformer, a full bridge rectifier and a control switch. The transformer has a first winding and a second winding, the first winding being connected to the power source, the second winding having a first tap and a second tap, with the first tap being connected to a first load output. The full bridge rectifier includes four nodes, the first being connected to the second tap of the second winding, the second being connected to a second load output, the third being connected to a reference voltage source. The control switch is connected between a fourth of the four nodes and the reference voltage source.
摘要:
A micro-colloid thruster system may be fabricated using micro electromechanical system (MEMS) fabrication techniques. A beam of charged droplets may be extracted from an emitter tip in an emitter array by an extractor electrode and accelerated by an accelerator electrode to produce thrust. The micro-colloid thruster system may be used as the main propulsion system for microspacecraft and for precision maneuvers in larger spacecraft.
摘要:
An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-well resistor, parasitic capacitance and construction of the diode underneath a bonding input pad contribute to performance of the switch as well as saving space needed to construct the switch.
摘要:
An electronic circuit package in which several high voltage components are packaged along with low voltage components using standard circuit boards and minimizing the space needed for the entire assembly. A miniature circuit board, constructed of standard circuit board material, is used to mount several electronic components, some of which require high voltages. To meet isolation requirements, requiring a dielectric strength more than that provided by the board itself, between the high and low voltage nodes the circuit board incorporates slots or other cut out shapes in the board. The slots or other cut out shapes provide two functions. The first use for the slots or other cut out shapes is to prevent charge migration on the surface of the board between high and low voltage nodes. This is accomplished by placing the slots or other cut out shapes between high and low voltage nodes. The circuit board is then encapsulated within a potting material. The slots or other cut out shapes perform a second function of allowing the potting material to flow around and through the board to facilitate full encapsulation of the board and the electronic devices on the board. Several of the slots or other cut out shapes are placed in the board directly underneath the electronic devices mounted on the board to aid in allowing the potting material to completely surround and encapsulate the electronic devices.
摘要:
A low profile interconnect is used for electronic connections to segmented electrode donor rolls in which at least 78 interconnections between the segmented donor roll and a commutator can be made with a profile of approximately 10-15 mils, which retains reliability in an approximately 600 rpm rotational environment and which withstands 2000 volts between adjacent lines.