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公开(公告)号：US09887205B2
公开(公告)日：2018-02-06
申请号：US15200816
申请日：2016-07-01
Applicant: U.S. Army Research Laboratory
Inventor： Glen R Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
IPC: H01L21/00 , H01L27/11507 , H01L43/08 , H01L43/02 , H01L43/10 , H01L43/12 , G11C11/22 , G11C11/50 , G11C23/00
CPC classification number: H01L27/11507 , G11C11/22 , G11C11/221 , G11C11/2273 , G11C11/50 , G11C23/00 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.
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公开(公告)号：US09385306B2
公开(公告)日：2016-07-05
申请号：US14645711
申请日：2015-03-12
Applicant: U.S. Army Research Laboratory
Inventor： Glen R Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
CPC classification number: H01L27/11507 , G11C11/22 , G11C11/221 , G11C11/2273 , G11C11/50 , G11C23/00 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.
Abstract translation: 一种存储器件，包括一个基座; 包括铁电层和至少两个导电层的电容器，所述铁电层位于所述至少两个导电层之间; 所述至少两个导电层中的每一个可操作地连接到电流源; 在第一端附接到基座并在第二端处可移动的悬臂，铁电电容器被安装到悬臂上，使得悬臂的第二端在施加电流到铁电层时移动预定的位移，这引起了 铁电层，从而引起悬臂的位移，其与接触件可操作地相关联，使得当悬臂的预定位移时，触头能够进行电连接。 连接的存在或不存在形成存储器单元的两个状态。
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公开(公告)号：US09761785B2
公开(公告)日：2017-09-12
申请号：US14219028
申请日：2014-03-19
Inventor： Glen R Fox , Ronald G. Polcawich , Daniel M Potrepka , Luz M Sanchez
IPC: H01L41/08 , H01L41/319 , H01L41/187 , H01L41/316 , C30B29/32 , C30B23/02 , C30B25/18 , C23C18/12
CPC classification number: H01L41/081 , C23C18/1216 , C23C18/1291 , C23C18/1295 , C30B23/025 , C30B25/183 , C30B29/32 , H01L41/0815 , H01L41/1875 , H01L41/1876 , H01L41/316 , H01L41/318 , H01L41/319
Abstract: A ferroelectric device comprising a substrate;a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.
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公开(公告)号：US20150263268A1
公开(公告)日：2015-09-17
申请号：US14645711
申请日：2015-03-12
Applicant: U.S. Army Research Laboratory
Inventor： Glen R Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
CPC classification number: H01L27/11507 , G11C11/22 , G11C11/221 , G11C11/2273 , G11C11/50 , G11C23/00 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.
Abstract translation: 一种存储器件，包括一个基座; 包括铁电层和至少两个导电层的电容器，所述铁电层位于所述至少两个导电层之间; 所述至少两个导电层中的每一个可操作地连接到电流源; 在第一端附接到基座并在第二端处可移动的悬臂，铁电电容器被安装到悬臂上，使得悬臂的第二端在施加电流到铁电层时移动预定的位移，这引起了 铁电层，从而引起悬臂的位移，其与接触件可操作地相关联，使得当悬臂的预定位移时，触头能够进行电连接。 连接的存在或不存在形成存储器单元的两个状态。
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