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公开(公告)号：US09355761B2
公开(公告)日：2016-05-31
申请号：US14146357
申请日：2014-01-02
IPC分类号： H01B19/00 , H01B19/04 , H01L21/02 , C04B35/468 , C04B35/493 , C04B35/624 , C04B35/634 , C23C18/12 , C23C18/20
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译： 本发明提供了一种在基板上形成无裂纹电介质膜的方法。 该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加于基底。 沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。 重复沉积，热预处理，预溶解，热解和结晶，直到电介质膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。 该方法在基底上提供厚的无裂纹的电介质膜，电介质形成致密的无厚度的无裂纹电介质，其整个电介质厚度为约1.5μm至约20.0μm。
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公开(公告)号：US09299496B2
公开(公告)日：2016-03-29
申请号：US14873532
申请日：2015-10-02
发明人： Manuel Ray Fairchild , Ralph S. Taylor , Carl W. Berlin , Celine Wk Wong , Beihai Ma , Uthamalingam Balachandran
CPC分类号： H01G4/1245 , H01G4/008 , H01G4/012 , H01G4/30 , H01G4/306 , H01G4/33 , H01G4/38 , H01L28/55 , Y10T29/417
摘要： A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
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公开(公告)号：US11617992B2
公开(公告)日：2023-04-04
申请号：US17168646
申请日：2021-02-05
摘要： Ceramic proton-conducting oxide membranes are described herein, which are useful for separating steam from organic chemicals under process conditions. The membranes have a layered structure, with a dense film of the perovskite over a porous composite substrate comprising the perovskite material and a metallic material (e.g., Ni, Cu, or Pt). The perovskite comprises an ABO3-type structure, where “A” is Ba and “B” is a specified combination of Ce, Zr, and Y. The perovskite ceramic materials described herein have an empirical formula of Ba(CexZr1-x-nYn)O3-δ, wherein 0
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公开(公告)号：US10662509B2
公开(公告)日：2020-05-26
申请号：US15261205
申请日：2016-09-09
IPC分类号： C22C32/00 , B22D21/00 , B22D23/06 , B22D29/00 , B22D30/00 , F27D11/12 , F27D13/00 , F27B17/00 , F27D7/06 , B22D27/15 , C22C1/05 , C22C26/00 , C22C1/02 , C22C1/10
摘要： A method for making covetic metal-carbon composites or compositions by electron beam melt heating under vacuum (pressure
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公开(公告)号：US20160027580A1
公开(公告)日：2016-01-28
申请号：US14873532
申请日：2015-10-02
发明人： Manuel Ray Fairchild , Ralph S. Taylor , Carl W. Berlin , Celine Wk Wong , Beihai Ma , Uthamalingam Balachandran
CPC分类号： H01G4/1245 , H01G4/008 , H01G4/012 , H01G4/30 , H01G4/306 , H01G4/33 , H01G4/38 , H01L28/55 , Y10T29/417
摘要： A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
摘要翻译： 在由玻璃形成的基板上的铅 - 镧 - 钛酸锆（PLZT）电容器。 第一金属化层沉积在基板的顶侧上以形成第一电极。 PLZT的介电层沉积在第一金属化层上。 第二金属化层沉积在电介质层上以形成第二电极。 玻璃基板是有利的，因为玻璃与用于形成电容器的退火工艺相容。
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公开(公告)号：US09692075B1
公开(公告)日：2017-06-27
申请号：US15006661
申请日：2016-01-26
IPC分类号： H01M8/12 , H01M8/1226 , H01M4/86 , H01M8/1007 , H01M8/124 , H01M8/1253 , H01M8/126
CPC分类号： H01M8/1226 , H01M4/8621 , H01M8/1253 , H01M8/126 , H01M2008/1293 , H01M2300/0094 , Y02E60/525 , Y02P70/56
摘要： The present invention provides a multilayer anode/electrolyte assembly comprising a porous anode substrate and a layered solid electrolyte in contact therewith. The layered solid electrolyte includes a first dense layer of yttrium-doped barium zirconate (BZY), optionally including another metal besides Y, Ba, and Zr (e.g., a lanthanide metal such as Pr) on one surface thereof, a second dense layer of yttrium-doped barium cerate (BCY), and an interfacial layer between and contacting the BZY and BCY layers. The interfacial layer comprises a solid solution of the BZY and BCY electrolytes. The porous anode substrate comprises at least one porous ceramic material that is stable to carbon dioxide and water (e.g., porous BZY), as well as an electrically conductive metal and/or metal oxide (e.g., Ni, NiO, and the like).
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公开(公告)号：US09230739B2
公开(公告)日：2016-01-05
申请号：US14065837
申请日：2013-10-29
发明人： M. Ray Fairchild , Ralph S. Taylor , Carl W. Berlin , Celine W K Wong , Beihai Ma , Uthamalingam Balachandran
CPC分类号： H01G4/1245 , H01G4/008 , H01G4/012 , H01G4/30 , H01G4/306 , H01G4/33 , H01G4/38 , H01L28/55 , Y10T29/417
摘要： A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
摘要翻译： 在由玻璃形成的基板上的铅 - 镧 - 钛酸锆（PLZT）电容器。 第一金属化层沉积在基板的顶侧上以形成第一电极。 PLZT的介电层沉积在第一金属化层上。 第二金属化层沉积在电介质层上以形成第二电极。 玻璃基板是有利的，因为玻璃与用于形成电容器的退火工艺相容。
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公开(公告)号：US20210245112A1
公开(公告)日：2021-08-12
申请号：US17174796
申请日：2021-02-12
发明人： Frederick F. Stewart , Christopher J. Orme , John R. Klaehn , Birendra Adhikari , Olga Aleksandrovna Shenderova , Nicholas Austin Nunn , Marco D. Torelli , Gary Elder McGuire , Tae H. Lee , Uthamalingam Balachandran
摘要： A mixed matrix membrane comprises a support structure. The support structure comprises a glassy polymer matrix, and nanodiamond particles dispersed within the glassy polymer matrix. A gas separation membrane apparatus, a gaseous fluid treatment system, and a method of forming a mixed matrix membrane are also described.
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公开(公告)号：US09679705B2
公开(公告)日：2017-06-13
申请号：US14631536
申请日：2015-02-25
IPC分类号： C04B35/00 , H01G13/04 , C04B35/491 , C04B35/624 , C23C18/12 , C23C26/00 , H01G4/12
CPC分类号： H01G13/04 , C04B35/491 , C04B35/624 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3296 , C04B2235/441 , C04B2235/443 , C04B2235/449 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , C04B2235/768 , C23C18/1204 , C23C18/1208 , C23C18/1225 , C23C18/1241 , C23C18/1254 , C23C18/1283 , C23C18/1295 , C23C26/00 , H01G4/1218 , H01G4/1245 , Y10T428/24355 , Y10T428/266
摘要： The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.
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公开(公告)号：US20140120736A1
公开(公告)日：2014-05-01
申请号：US14146357
申请日：2014-01-02
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译： 本发明提供了一种在基板上形成无裂纹电介质膜的方法。 该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加于基底。 沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。 重复沉积，热预处理，预溶解，热解和结晶，直到电介质膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。 该方法在基底上提供厚的无裂纹的电介质膜，电介质形成致密的无厚度的无裂纹电介质，其整个电介质厚度为约1.5μm至约20.0μm。
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