公开(公告)号：US20230207668A1

公开(公告)日：2023-06-29

申请号：US18118115

申请日：2023-03-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/66795 ,  H01L29/785 ,  H01L29/7834 ,  H01L29/511 ,  H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/28202

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US12009409B2

公开(公告)日：2024-06-11

申请号：US18118115

申请日：2023-03-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/28202 ,  H01L29/511 ,  H01L29/7834 ,  H01L29/785

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US20240339331A1

公开(公告)日：2024-10-10

申请号：US18143076

申请日：2023-05-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Guang-Yu Lo ,  Chun-Tsen Lu

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/308 ,  H01L29/78

CPC classification number: H01L21/31144 ,  H01L21/02123 ,  H01L21/308 ,  H01L29/785 ,  H01L29/41791

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising a medium-voltage (MV) region and a low-voltage (LV) region, forming a first gate structure and a second gate structure on the MV region and a second gate structure on the LV region, forming a patterned mask on the MV region as the patterned mask covers the first gate structure and the second gate structure and exposes the substrate between the first gate structure and the second gate structure, and then forming a first epitaxial layer between the first gate structure and the second gate structure.

公开(公告)号：US20240313046A1

公开(公告)日：2024-09-19

申请号：US18134555

申请日：2023-04-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Guang-Yu Lo ,  Chun-Tsen Lu ,  Chung-Fu Chang ,  Chih-Shan Wu ,  Yu-Hsiang Lin ,  Wei-Hao Chang

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second trench in the fin-shaped structure, forming a first dielectric layer in the first trench and the second trench, removing part of the first dielectric layer, forming a second dielectric layer in the first trench and the second trench to form a first single diffusion break (SDB) structure and a second SDB structure, and then forming a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.

公开(公告)号：US20240282843A1

公开(公告)日：2024-08-22

申请号：US18653933

申请日：2024-05-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/28202 ,  H01L29/511 ,  H01L29/7834 ,  H01L29/785

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US11145733B1

公开(公告)日：2021-10-12

申请号：US17033919

申请日：2020-09-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-Hung Chen ,  Chih-Kai Hsu ,  Ssu-I Fu ,  Chia-Jung Hsu ,  Chun-Ya Chiu ,  Yu-Hsiang Lin ,  Po-Wen Su ,  Chung-Fu Chang ,  Guang-Yu Lo ,  Chun-Tsen Lu

IPC: H01L29/423 ,  H01L29/40 ,  H01L21/308 ,  H01L29/51 ,  H01L29/66 ,  H01L21/311 ,  H01L21/28 ,  H01L29/78

Abstract: The present invention discloses a method for forming a semiconductor device with a reduced silicon horn structure. After a pad nitride layer is removed from a substrate, a hard mask layer is conformally deposited over the substrate. The hard mask layer is then etched and trimmed to completely remove a portion of the hard mask layer from an active area and a portion of the hard mask layer from an oblique sidewall of a protruding portion of a trench isolation region around the active area. The active area is then etched to form a recessed region. A gate dielectric layer is formed in the recessed region and a gate electrode layer is formed on the gate dielectric layer.

公开(公告)号：US20230207669A1

公开(公告)日：2023-06-29

申请号：US18118154

申请日：2023-03-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/66795 ,  H01L29/785 ,  H01L29/7834 ,  H01L29/511 ,  H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/28202

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US11631753B2

公开(公告)日：2023-04-18

申请号：US16282323

申请日：2019-02-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US20200235227A1

公开(公告)日：2020-07-23

申请号：US16282323

申请日：2019-02-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L21/02 ,  H01L29/51

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.