Abstract:
A method of and device for making a semiconductor package. The method comprises etching a first side of a metallic piece forming a leadframe with one or more wire bonding pads, applying a first protective layer on the first side, etching a second side of the metallic piece forming one or more conductive terminals, and applying a second protective layer on the second side. The semiconductor package comprises wire bonding pads in pillars structure surrounding a die attached to the leadframe. One or more terminals are on the bottom side of the semiconductor package.
Abstract:
Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a wafer having first and second major surfaces. The wafer is prepared with a plurality of dies and a plurality of external electrical contacts disposed on the first major surface of the wafer. The method includes processing the wafer. Processing the wafer includes separating the wafer into a plurality of individual dies. An individual die includes first and second major surfaces and first and second sidewalls, and the external electrical contacts are formed on the first major surface of the die. An encapsulant material is formed. The encapsulant material covers at least a portion of the first and second sidewalls of the die.
Abstract:
Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a wafer having first and second major surfaces. The wafer is prepared with a plurality of dies and a plurality of external electrical contacts disposed on the first major surface of the wafer. The method includes processing the wafer. Processing the wafer includes separating the wafer into a plurality of individual dies. An individual die includes first and second major surfaces and first and second sidewalls, and the external electrical contacts are formed on the first major surface of the die. An encapsulant material is formed. The encapsulant material covers at least a portion of the first and second sidewalls of the die.
Abstract:
A method of and device for making a semiconductor package. The method comprises etching a first side of a metallic piece forming a leadframe with one or more wire bonding pads, applying a first protective layer on the first side, etching a second side of the metallic piece forming one or more conductive terminals, and applying a second protective layer on the second side. The semiconductor package comprises wire bonding pads in pillars structure surrounding a die attached to the leadframe. One or more terminals are on the bottom side of the semiconductor package.
Abstract:
Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a wafer having first and second major surfaces. The wafer is prepared with a plurality of dies and a plurality of external electrical contacts disposed on the first major surface of the wafer. The method includes processing the wafer. Processing the wafer includes separating the wafer into a plurality of individual dies. An individual die includes first and second major surfaces and first and second sidewalls, and the external electrical contacts are formed on the first major surface of the die. An encapsulant material is formed. The encapsulant material covers at least a portion of the first and second sidewalls of the die.