公开(公告)号：US20130157401A1

公开(公告)日：2013-06-20

申请号：US13805111

申请日：2011-06-16

申请人： Ulrich Jäger ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

发明人： Ulrich Jäger ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  H01L21/2254 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547

摘要： A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

摘要翻译： 一种用于在半导体衬底中产生选择性掺杂结构的方法，以便产生光伏太阳能电池。 该方法包括以下步骤：A）将掺杂层（2）施加到半导体衬底的发射极侧，B）局部加热掺杂层（2）的熔化区域和位于半导体衬底下方的半导体衬底的熔化区域 掺杂层（2），使得掺杂剂通过液 - 液扩散从掺杂层（2）扩散到熔融的半导体衬底中，使得在熔融混合物固化后产生高掺杂区域（3），C）产生 通过全面加热半导体衬底，平面低掺杂区域，D）去除掺杂层（2），以及E）以掺杂侧的半导体衬底的一部分去除或转换半导体衬底的一部分， 靠近表面的高掺杂区域被去除或被转换成不导电的层。

公开(公告)号：US08927317B2

公开(公告)日：2015-01-06

申请号：US13805111

申请日：2011-06-16

申请人： Ulrich Jager ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

发明人： Ulrich Jager ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

IPC分类号： H01L31/18 ,  H01L21/225 ,  H01L21/268 ,  H01L31/0224 ,  H01L31/068

CPC分类号： H01L31/18 ,  H01L21/2254 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547

摘要： A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

摘要翻译： 一种用于在半导体衬底中产生选择性掺杂结构的方法，以便产生光伏太阳能电池。 该方法包括以下步骤：A）将掺杂层（2）施加到半导体衬底的发射极侧，B）局部加热掺杂层（2）的熔化区域和位于半导体衬底下方的半导体衬底的熔化区域 掺杂层（2），使得掺杂剂通过液 - 液扩散从掺杂层（2）扩散到熔融的半导体衬底中，使得在熔融混合物固化后产生高掺杂区域（3），C）产生 通过全面加热半导体衬底，平面低掺杂区域，D）去除掺杂层（2），以及E）以掺杂侧的半导体衬底的一部分去除或转换半导体衬底的一部分， 靠近表面的高掺杂区域被去除或被转换成不导电的层。

公开(公告)号：US09023682B2

公开(公告)日：2015-05-05

申请号：US13704683

申请日：2011-06-16

申请人： Sebastian Mack ,  Ulrich Jager ,  Andreas Wolf ,  Daniel Biro ,  Ralf Preu ,  Gero Kastner

发明人： Sebastian Mack ,  Ulrich Jager ,  Andreas Wolf ,  Daniel Biro ,  Ralf Preu ,  Gero Kastner

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/225 ,  H01L21/268 ,  H01L31/0224 ,  H01L31/068

CPC分类号： H01L31/1864 ,  H01L21/2255 ,  H01L21/268 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate via thermal oxidation.

摘要翻译： 一种光伏太阳能电池的制造方法，包括以下步骤：A.将半导体衬底的前面（2） 通过在第一低掺杂区域（4）和第一低掺杂区域（3）内产生第一低掺杂区域（4）和局部高掺杂区域（3），在半导体衬底的前面（2）上产生选择性发射极掺杂， 地区; 至少在局部高掺杂区域中至少施加至少一个金属发射极接触结构至少一个金属发射极接触结构，其中在方法步骤B和C之间，相应的氧化硅层（5a，5b） ）通过热氧化同时在半导体衬底的前后产生在方法步骤B1中。

公开(公告)号：US20130095595A1

公开(公告)日：2013-04-18

申请号：US13704683

申请日：2011-06-16

申请人： Sebastian Mack ,  Ulrich Jager ,  Andreas Wolf ,  Daniel Biro ,  Ralf Preu ,  Gero Kastner

发明人： Sebastian Mack ,  Ulrich Jager ,  Andreas Wolf ,  Daniel Biro ,  Ralf Preu ,  Gero Kastner

IPC分类号： H01L31/18

CPC分类号： H01L31/1864 ,  H01L21/2255 ,  H01L21/268 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate via thermal oxidation.

摘要翻译： 一种光伏太阳能电池的制造方法，包括以下步骤：A.将半导体衬底的前面（2） 通过在第一低掺杂区域（4）和第一低掺杂区域（3）内产生第一低掺杂区域（4）和局部高掺杂区域（3），在半导体衬底的前面（2）上产生选择性发射极掺杂， 地区; 至少在局部高掺杂区域中至少施加至少一个金属发射极接触结构至少一个金属发射极接触结构，其中在方法步骤B和C之间，相应的氧化硅层（5a，5b） ）通过热氧化同时在半导体衬底的前后产生在方法步骤B1中。

公开(公告)号：US20110272020A1

公开(公告)日：2011-11-10

申请号：US13144531

申请日：2009-12-03

申请人： Daniel Biro ,  Oliver Schultz-Wittmann ,  Anke Lemke ,  Jochen Rentsch ,  Florian Clement ,  Marc Hofmann ,  Andreas Wolf ,  Luca Gautero ,  Sebastian Mack ,  Ralf Preu

发明人： Daniel Biro ,  Oliver Schultz-Wittmann ,  Anke Lemke ,  Jochen Rentsch ,  Florian Clement ,  Marc Hofmann ,  Andreas Wolf ,  Luca Gautero ,  Sebastian Mack ,  Ralf Preu

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/1868 ,  H01L31/02245 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a solar cell from a silicon wafer, including the following process steps: A) texturizing one side of the silicon substrate (1) for improving the absorption or removing saw damage on one side of the silicon substrate (1); B) generating an emitter area (2) on one side of the silicon substrate (1) by diffusing in a doping material for forming a pn transition; C) removing a glass layer which comprises the doping material; D) applying a masking layer (3) which is a dielectric layer; E) removing one part of the material of the silicon substrate (1); F) applying metal structures (5, 6) for electrically contacting the solar cell. It is significant that thermal oxidation is performed between the process steps E and F for forming an oxide layer (4) and that the masking layer (3) and the oxide layer (4) remain on the silicon substrate (1) in the subsequent process steps.

摘要翻译： 一种从硅晶片制造太阳能电池的方法，包括以下工艺步骤：A）使硅衬底（1）的一侧变形，以改善在硅衬底（1）的一侧的吸收或去除锯损坏; B）通过在用于形成pn转变的掺杂材料中扩散而在硅衬底（1）的一侧上产生发射极区域（2） C）去除包含掺杂材料的玻璃层; D）施加作为电介质层的掩模层（3）; E）去除硅衬底（1）的材料的一部分; F）施加用于电接触太阳能电池的金属结构（5,6）。 重要的是，在用于形成氧化物层（4）的工艺步骤E和F之间进行热氧化，并且在后续工艺中，掩模层（3）和氧化物层（4）保留在硅衬底（1）上 脚步。

公开(公告)号：US08828790B2

公开(公告)日：2014-09-09

申请号：US13061158

申请日：2009-08-20

申请人： Ralf Preu ,  Andreas Grohe ,  Daniel Biro ,  Jochen Rentsch ,  Marc Hofmann ,  Jan-Frederik Nekarda ,  Andreas Wolf

发明人： Ralf Preu ,  Andreas Grohe ,  Daniel Biro ,  Jochen Rentsch ,  Marc Hofmann ,  Jan-Frederik Nekarda ,  Andreas Wolf

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/225 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01L21/2254 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

摘要翻译： 一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii） 在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。 在熔融混合物固化之后，在金属层和半导体层之间形成接触。 重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。

公开(公告)号：US20110233711A1

公开(公告)日：2011-09-29

申请号：US13061158

申请日：2009-08-20

申请人： Ralf Preu ,  Andreas Grohe ,  Daniel Biro ,  Jochen Rentsch ,  Marc Hofmann ,  Jan-Frederik Nekarda ,  Andreas Wolf

发明人： Ralf Preu ,  Andreas Grohe ,  Daniel Biro ,  Jochen Rentsch ,  Marc Hofmann ,  Jan-Frederik Nekarda ,  Andreas Wolf

IPC分类号： H01L29/36 ,  H01L21/24

CPC分类号： H01L31/022425 ,  H01L21/2254 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

摘要翻译： 一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii） 在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。 在熔融混合物固化之后，在金属层和半导体层之间形成接触。 重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。

公开(公告)号：US20130112262A1

公开(公告)日：2013-05-09

申请号：US13810028

申请日：2011-07-11

申请人： Benjamin Thaidigsmann ,  Florian Clement ,  Daniel Biro ,  Andreas Wolf ,  Ralf Preu

发明人： Benjamin Thaidigsmann ,  Florian Clement ,  Daniel Biro ,  Andreas Wolf ,  Ralf Preu

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/02245 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.

公开(公告)号：US09087940B2

公开(公告)日：2015-07-21

申请号：US13810028

申请日：2011-07-11

申请人： Benjamin Thaidigsmann ,  Florian Clement ,  Daniel Biro ,  Andreas Wolf ,  Ralf Preu

发明人： Benjamin Thaidigsmann ,  Florian Clement ,  Daniel Biro ,  Andreas Wolf ,  Ralf Preu

IPC分类号： H01L21/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02245 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.

公开(公告)号：US20110174355A1

公开(公告)日：2011-07-21

申请号：US13061215

申请日：2009-08-25

申请人： Daniel Biro ,  Nicola Mingirulli ,  Florian Clement ,  Ralf Preu ,  Robert Woehl

发明人： Daniel Biro ,  Nicola Mingirulli ,  Florian Clement ,  Ralf Preu ,  Robert Woehl

IPC分类号： H01L31/05 ,  H01L31/0224

CPC分类号： H01L31/0516 ,  H01L31/022441 ,  Y02E10/50

摘要： A solar cell, in particular for connecting to a solar cell module, including at least one metallic base contact, at least one metallic emitter contact (5) and a semi-conductor structure having at least one base area and at least one emitter area (3). The base area and emitter area (2,3) are at least partially adjacent to each other forming a pn-junction, the base contact (6) being connected in an electrically conductive manner to the base area (2), the emitter contact (5) being connected in an electrically conductive manner to the emitter area (3), and the solar cells being arranged on the contact side (1) as a base and emitter contact (6,5). Essentially, the solar cell includes several metallic emitter contacts which are connected in an electrically conductive manner to the emitter area (3) and several metallic base contacts which are connected in an electrically conductive manner to the base area (2). The emitter contacts (5) do not have an electrically conductive connections among each other on the side facing away from the emitter area (3) and the base contacts do not have an electrically conductive connections on the side facing away from the base area (2). A solar cell module including at least two solar cells is also provided.

摘要翻译： 特别是用于连接太阳能电池模块的太阳能电池，包括至少一个金属基底触点，至少一个金属发射极触点（5）和具有至少一个基极区域和至少一个发射极区域的半导体结构 3）。 基极面积和发射极区域（2,3）至少部分地彼此相邻形成pn结，基极触点（6）以导电方式连接到基极区域（2），发射极触点 5）以导电方式连接到发射极区域（3），并且太阳能电池被布置在接触侧（1）上作为基极和发射极接触（6,5）。 本质上，太阳能电池包括以导电方式连接到发射极区域（3）的几个金属发射极触点和以导电方式连接到基极区域（2）的几个金属基极触点。 发射极触点（5）在背离发射极区域（3）的一侧不具有彼此之间的导电连接，并且基极触点在远离基极区域（2）的一侧不具有导电连接 ）。 还提供了包括至少两个太阳能电池的太阳能电池组件。