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    Silicate producing method
    1.
    发明授权
    Silicate producing method 有权
    硅酸盐生产方法

    公开(公告)号：US08372378B2

    公开(公告)日：2013-02-12

    申请号：US13082603

    申请日：2011-04-08

    申请人： Ulrich Mueller ,  Roger Ruetz ,  Hermann Gies

    发明人： Ulrich Mueller ,  Roger Ruetz ,  Hermann Gies

    IPC分类号： C01B33/20 ,  C01B37/02

    CPC分类号： C01B37/02 ,  Y02P20/582

    摘要： The present invention relates to a process for the preparation of a silicate comprising at least silicon and oxygen, comprising (1) mixing of silicon dioxide and/or of a silicon dioxide precursor with an aqueous solution comprising at least one tetraalkylammonium compound comprising R1R2R3R4N+ and at least one base, wherein R1 and R2 are methyl and both R3 and R4 are n-propyl; (2) heating of the colloidal solution obtained according to (1) to a temperature in the range of from greater than the boiling point of the colloidal solution under the chosen pressure to 180° C. at atmospheric pressure to give a suspension comprising at least one silicate, wherein the silicate comprising at least silicon and oxygen is added as a crystallization auxiliary in (1).

    摘要翻译： 本发明涉及一种制备至少包含硅和氧的硅酸盐的方法，包括（1）将二氧化硅和/或二氧化硅前体与包含至少一种包含R1R2R3R4N +的四烷基铵化合物的水溶液混合，并在 至少一个碱，其中R 1和R 2是甲基，R 3和R 4都是正丙基; （2）将根据（1）获得的胶体溶液在大气压下加热到大于压力下的胶体溶液的沸点至180℃的温度范围内，得到至少包含至少 一种硅酸盐，其中在（1）中加入至少含有硅和氧的硅酸盐作为结晶助剂。

    Silicate producing method
    2.
    发明授权
    Silicate producing method 有权
    硅酸盐生产方法

    公开(公告)号：US07947244B2

    公开(公告)日：2011-05-24

    申请号：US12090027

    申请日：2006-10-11

    申请人： Ulrich Mueller ,  Roger Ruetz ,  Hermann Gies

    发明人： Ulrich Mueller ,  Roger Ruetz ,  Hermann Gies

    IPC分类号： C01B33/00 ,  C01B33/20 ,  C01B33/26

    CPC分类号： C01B37/02 ,  Y02P20/582

    摘要： The present invention relates to a process for the preparation of a silicate comprising at least silicon and oxygen, comprising (1) mixing of silicon dioxide and/or of a silicon dioxide precursor with an aqueous solution comprising at least one tetraalkylammonium compound comprising R1R2R3R4N+ and at least one base, wherein R1 and R2 are methyl and both R3 and R4 are n-propyl; (2) heating of the colloidal solution obtained according to (1) to a temperature in the range of from greater than the boiling point of the colloidal solution under the chosen pressure to 180° C. at atmospheric pressure to give a suspension comprising at least one silicate, wherein the silicate comprising at least silicon and oxygen is added as a crystallization auxiliary in (1).

    摘要翻译： 本发明涉及一种制备至少包含硅和氧的硅酸盐的方法，包括（1）将二氧化硅和/或二氧化硅前体与包含至少一种包含R1R2R3R4N +的四烷基铵化合物的水溶液混合，并在 至少一个碱，其中R 1和R 2是甲基，R 3和R 4都是正丙基; （2）将根据（1）获得的胶体溶液在大气压下加热到大于压力下的胶体溶液的沸点至180℃的温度范围内，得到至少包含至少 一种硅酸盐，其中在（1）中加入至少含有硅和氧的硅酸盐作为结晶助剂。

    Projection exposure system for microlithography with a measurement device
    9.
    发明授权
    Projection exposure system for microlithography with a measurement device 有权
    具有测量装置的微光刻投影曝光系统

    公开(公告)号：US09001304B2

    公开(公告)日：2015-04-07

    申请号：US12838393

    申请日：2010-07-16

    申请人： Ulrich Mueller ,  Joachim Stuehler ,  Oswald Gromer ,  Rolf Freimann ,  Paul Kaufmann ,  Bernhard Geuppert

    发明人： Ulrich Mueller ,  Joachim Stuehler ,  Oswald Gromer ,  Rolf Freimann ,  Paul Kaufmann ,  Bernhard Geuppert

    IPC分类号： G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70775 ,  G03F7/70258 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70725 ,  G03F7/7085 ,  G03F7/70891

    摘要： A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26. An evaluation device (54) is configured to establish a lateral position of the image of the measurement structure (48) in the area of the detector (52) during the exposure process.

    摘要翻译： 一种用于微光刻的投影曝光系统（10），包括：保持掩模（18）的掩模保持装置（14），掩模结构（20）设置在掩模上;保持基板（30）的基板保持装置（36） 投影光学器件（26）在曝光过程期间将掩模结构（20）成像到衬底（30）上;以及测量结构（48），其相对于投影曝光系统的参考元件（16）设置在限定位置 10），所述限定位置与所述掩模保持装置（14）的位置机械地脱离。 投影曝光系统（10）还包括检测器（52），其被布置成记录由投影光学器件（26）成像的测量结构（48）的图像。 投影曝光系统（10）被配置为使得在投影曝光系统（10）的操作期间，掩模结构（20）的成像和测量结构（48）的成像同时由投影光学器件 （26）评估装置（54）被配置为在曝光处理期间在检测器（52）的区域中建立测量结构（48）的图像的横向位置。