公开(公告)号：US07456933B2

公开(公告)日：2008-11-25

申请号：US11220643

申请日：2005-09-08

申请人： Ulrich Wegmann ,  Vladimir Kamenov ,  Thomas Muelders ,  Toralf Gruner ,  Markus Mengel

发明人： Ulrich Wegmann ,  Vladimir Kamenov ,  Thomas Muelders ,  Toralf Gruner ,  Markus Mengel

IPC分类号： G03B27/54 ,  G03B27/72

CPC分类号： G03F7/706 ,  G03F7/701 ,  G03F7/70566 ,  G03F7/70591

摘要： In a method for improving the imaging properties of a projection objective of a microlithographic projection exposure apparatus, an appropriate illumination angle distribution adapted to a mask (24; 224) to be projected is selected. Then locations (40a, 40b; 60a, 60b; 80a, 80b, 80c) in an exit pupil of the projection objective (20), which are illuminated under these conditions by projection light during a projection of the mask, are determined. For at least one image point, an actual value of an imaging quantity, e.g. a wavefront profile or a polarization state, is determined that influences the imaging properties of the projection objective. Finally, corrective measures are calculated such that the actual value of the imaging quantity approximates a desired value at these locations. In this last step, however, deviations of the actual value from the desired value are taken into account exclusively at said locations illuminated in the exit pupil.

摘要翻译： 在用于改善微光刻投影曝光装置的投影物镜的成像特性的方法中，选择适于投影的掩模（24; 224）的适当的照明角度分布。 然后在投影物镜（20）的出射光瞳处的位置（40a，40b; 60a，60b; 80a，80b，80c）处， 面具，确定。 对于至少一个图像点，成像量的实际值，例如， 确定影响投影物镜的成像特性的波前轮廓或偏振状态。 最后，计算校正措施，使得成像量的实际值在这些位置处接近期望值。 然而，在最后一步中，实际值与期望值的偏差仅在出口光瞳上照亮的所述位置被考虑。

公开(公告)号：US20060077371A1

公开(公告)日：2006-04-13

申请号：US11220643

申请日：2005-09-08

申请人： Ulrich Wegmann ,  Vladimir Kamenov ,  Thomas Muelders ,  Toralf Gruner

发明人： Ulrich Wegmann ,  Vladimir Kamenov ,  Thomas Muelders ,  Toralf Gruner

IPC分类号： G03B27/54

CPC分类号： G03F7/706 ,  G03F7/701 ,  G03F7/70566 ,  G03F7/70591

摘要： In a method for improving the imaging properties of a projection objective of a microlithographic projection exposure apparatus, an appropriate illumination angle distribution adapted to a mask (24; 224) to be projected is selected. Then locations (40a, 40b; 60a, 60b; 80a, 80b, 80c) in an exit pupil of the projection objective (20), which are illuminated under these conditions by projection light during a projection of the mask, are determined. For at least one image point, an actual value of an imaging quantity, e.g. a wavefront profile or a polarization state, is determined that influences the imaging properties of the projection objective. Finally, corrective measures are calculated such that the actual value of the imaging quantity approximates a desired value at these locations. In this last step, however, deviations of the actual value from the desired value are taken into account exclusively at said locations illuminated in the exit pupil.

摘要翻译： 在用于改善微光刻投影曝光装置的投影物镜的成像特性的方法中，选择适于投影的掩模（24; 224）的适当照明角度分布。 然后在投影物镜（20）的出射光瞳处的位置（40a，40b; 60a，60b; 80a，80b，80c）处， 面具，确定。 对于至少一个图像点，成像量的实际值，例如， 确定影响投影物镜的成像特性的波前轮廓或偏振状态。 最后，计算校正措施，使得成像量的实际值在这些位置处接近期望值。 然而，在最后一步中，实际值与期望值的偏差仅在出口光瞳上照亮的所述位置被考虑。

公开(公告)号：US20060132917A1

公开(公告)日：2006-06-22

申请号：US11274152

申请日：2005-11-16

申请人： Christoph Zaczek ,  Thomas Muelders ,  Toralf Gruner

发明人： Christoph Zaczek ,  Thomas Muelders ,  Toralf Gruner

IPC分类号： G02B27/28

CPC分类号： G03F7/70958 ,  G02B27/0012 ,  G02B27/283 ,  G03F7/705

摘要： In a method for making an optical system for imaging a radiation distribution from an input surface of the optical system into an output surface of the optical system, the optical system has a multiplicity of optical components which determine an imaging quality of the optical system, which are arranged along an optical axis of the optical system and comprise at least one optical component which has a substrate with a substrate surface which is provided for carrying an interference layer system having a layer construction that determines the optical properties of the optical component covered with the interference layer system. The method includes: predefining an optimization target for at least one imaging quality parameter that represents the imaging quality of the system; determining the imaging quality of the optical system while taking account of the layer construction of the interference layer system; and varying the layer construction for approximating the imaging quality parameter to the optimization target. In accordance with the method, the determination of the optimum layer construction is coupled directly with an assessment and of the imaging quality of the total system including the interference layer system to be optimized.

摘要翻译： 在制造用于将从光学系统的输入表面的辐射分布成像到光学系统的输出表面的光学系统的方法中，光学系统具有多个光学部件，其确定光学系统的成像质量， 沿着光学系统的光轴布置并且包括至少一个光学部件，该光学部件具有衬底，该衬底具有衬底表面，衬底表面被提供用于承载具有层结构的干涉层系统，所述层结构决定了被覆盖的光学部件的光学特性 干涉层系统。 该方法包括：为表示系统的成像质量的至少一个成像质量参数预定义优化目标; 在考虑到干涉层系统的层结构的同时确定光学系统的成像质量; 并且改变用于将成像质量参数近似到优化目标的层结构。 根据该方法，最佳层结构的确定直接与包括要优化的干涉层系统的总体系统的评估和成像质量相耦合。

公开(公告)号：US20080008972A1

公开(公告)日：2008-01-10

申请号：US11740150

申请日：2007-04-25

申请人： Thomas Muelders ,  Bernd Kuechler ,  Frank-Michael Kamm

发明人： Thomas Muelders ,  Bernd Kuechler ,  Frank-Michael Kamm

IPC分类号： G03C5/00

CPC分类号： G03F1/36

摘要： A method and device can be used for automatically generating at least one of a mask layout and an illumination pixel pattern of an imaging system in a process for the manufacturing of a semiconductor device. The mask layout is subdivided into a multitude of discrete tiles. A first dataset is generated and includes amplitude point spread function (APSF) values for a given imaging system for at least one defocus value z. A second dataset is generated and includes tile spread functions Vq(r), corresponding to mask tiles and illumination pixels. An intensity distribution I(r) is optimized in an image plane for the semiconductor device subject to a merit function by means of a stochastic variation by at least one of the group of the discrete mask tiles and the illumination pixels using the pre-calculated tile spread functions Vq(r) of the second dataset.

摘要翻译： 一种方法和装置可用于在制造半导体器件的过程中自动产生成像系统的掩模布局和照明像素图案中的至少一个。 掩模布局被细分成多个离散的瓦片。 产生第一数据集，并且包括用于至少一个散焦值z的给定成像系统的幅度点扩展函数（APSF）值。 生成第二数据集，并且包括对应于掩模图块和照明像素的图块展开函数Vq（r）。 强度分布I（r）在经受优点功能的半导体器件的图像平面中被优化，借助于使用预先计算的瓦片的离散掩模瓦片和照明像素中的至少一个的随机变化 第二个数据集的扩展函数Vq（r）。

公开(公告)号：US20090244502A1

公开(公告)日：2009-10-01

申请号：US12056060

申请日：2008-03-26

申请人： Bernd Kuechler ,  Rainer Pforr ,  Thomas Muelders

发明人： Bernd Kuechler ,  Rainer Pforr ,  Thomas Muelders

IPC分类号： G03B27/52 ,  G03F7/26 ,  G03F1/14

CPC分类号： G03F7/70891 ,  G03F1/36 ,  G03F1/50 ,  G03F7/70433

摘要： Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection.

摘要翻译： 实施例涉及补偿透镜加热，光刻投影系统和光掩模。 因此，通过提供包括在第一区域中基本对称布置的规则图案和包括多个子分辨率结构元件的子分辨率图案的布局图案来补偿透镜加热，其中在第二区域中的子分辨率图案， 以便在光刻投影的情况下使投影装置的非均匀透镜加热最小化。

公开(公告)号：US20070229790A1

公开(公告)日：2007-10-04

申请号：US11728181

申请日：2007-03-23

申请人： Bernd Kuechler ,  Thomas Muelders ,  Rainer Pforr ,  Joerg Tschischgale

发明人： Bernd Kuechler ,  Thomas Muelders ,  Rainer Pforr ,  Joerg Tschischgale

IPC分类号： G03F7/20 ,  G03B27/42

CPC分类号： G03F7/70308 ,  G03F7/70283

摘要： An arrangement for the transfer of structural elements of a photomask onto a substrate includes an illumination device, a photomask with a plurality of structural elements, wherein radiation from the illumination device transfers the structural elements of the photomask onto a photoresist placed on a substrate, and an optical element, wherein the optical element produces a local variation in the degree of transmission of the radiation.

摘要翻译： 用于将光掩模的结构元件转移到基板上的布置包括照明装置，具有多个结构元件的光掩模，其中来自照明装置的辐射将光掩模的结构元件转移到放置在基板上的光致抗蚀剂上，以及 光学元件，其中所述光学元件产生所述辐射的透射程度的局部变化。

公开(公告)号：US20080010627A1

公开(公告)日：2008-01-10

申请号：US11483254

申请日：2006-07-06

申请人： Thomas Muelders ,  Bernd Kuechler ,  Frank-Michael Kamm

发明人： Thomas Muelders ,  Bernd Kuechler ,  Frank-Michael Kamm

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： Method and device for automatically generating at least one of a mask layout and an illumination pixel pattern, of an imaging system in a process for the manufacturing of a semiconductor device, wherein the mask layout is subdivided into a multitude of discrete tiles, comprisinga) generating a first dataset comprising amplitude point spread function (APSF) values for a given imaging system for at least one defocus value z,b) after splitting the illumination pixel pattern into qk pixels, generating a second dataset comprising tile spread functions Vq(r), corresponding to mask tiles and illumination pixels,c) optimizing an intensity distribution I(r) in an image plane for the semiconductor device subject to a merit function, by means of a stochastic variation by at least one of the group of the discrete mask tiles and the illumination pixels using the pre-calculated tile spread functions Vq(r) of the second dataset. The invention is also concerned with the automatic generation of an effective two dimensional mask layout.

摘要翻译： 用于在制造半导体器件的过程中自动产生成像系统的掩模布局和照明像素图案中的至少一个的方法和装置，其中所述掩模布局被细分成多个离散瓦片，包括a） 生成包括针对至少一个散焦值z的给定成像系统的幅度点扩展函数（APSF）值的第一数据集，b）在将所述照明像素图案分解为像素像素之后，生成第二数据集 包括对应于掩模瓦片和照明像素的瓦片扩散函数Vq（r），c）通过至少一个随机变化来优化经受优点功能的半导体器件的图像平面中的强度分布I（r） 使用第二数据集的预先计算的瓦片扩散函数V q（r）的一组离散掩模瓦片和照明像素中的一个。 本发明还涉及自动生成有效的二维掩模布局。

公开(公告)号：US20060181691A1

公开(公告)日：2006-08-17

申请号：US11339844

申请日：2006-01-26

申请人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

发明人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

IPC分类号： G03B27/54

CPC分类号： G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

摘要： An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

摘要翻译： 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。

公开(公告)号：US07339652B2

公开(公告)日：2008-03-04

申请号：US11339844

申请日：2006-01-26

申请人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

发明人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

IPC分类号： G03B27/54 ,  G03B27/72 ,  G03B27/42

CPC分类号： G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

摘要： An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

摘要翻译： 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。

公开(公告)号：US20070009816A1

公开(公告)日：2007-01-11

申请号：US11455286

申请日：2006-06-16

申请人： Rainer Pforr ,  Mario Hennig ,  Jens Reichelt ,  Thomas Muelders

发明人： Rainer Pforr ,  Mario Hennig ,  Jens Reichelt ,  Thomas Muelders

IPC分类号： G03F7/20

CPC分类号： G02B5/205 ,  G03F7/7015 ,  G03F7/70191 ,  G03F7/70625

摘要： A transparent optical element in a region between a photo mask and a light source of a photolithographic apparatus is provided having a plurality of attenuating elements being arranged in accordance with a first intensity correction function. The first intensity correction function is calculated from variations of characteristic feature size of structural elements of a resist pattern as compared to the nominal values of structural elements of a layout pattern. The variations of the characteristic feature size are divided into a first contribution being associated with the photolithographic apparatus and into a second contribution being associated with the photo mask.

摘要翻译： 提供了一种在光刻设备的光掩模和光源之间的区域中的透明光学元件，其具有根据第一强度校正功能布置的多个衰减元件。 与布局图案的结构元件的标称值相比，第一强度校正功能是根据抗蚀剂图案的结构元件的特征特征尺寸的变化计算的。 特征特征尺寸的变化被分为与光刻设备相关联的第一贡献和与光掩模相关联的第二贡献。