Hexaboride electron emissive material
    1.
    发明授权
    Hexaboride electron emissive material 失效
    六硼化物电子发射材料

    公开(公告)号:US3932314A

    公开(公告)日:1976-01-13

    申请号:US503471

    申请日:1974-09-05

    CPC分类号: H01J1/148 H01J1/304

    摘要: An electron emissive material of the formula (Y.sub.1.sub.-x EU.sub.x)B.sub.6 having the calcium hexaboride type crystal structure can easily produce hexaborides of the single phase. These borides have a number of merits such as small work function, high mechanical properties and low vapor pressure, and they are far more excellent than prior-art materials when used in a thermionic emission cathode and a field emission type cold cathode.

    摘要翻译: 具有六硼化钙型晶体结构的式(Y1-xEUx)B6的电子发射材料可以容易地生产单相六硼化物。 这些硼化物具有功函数小,机械性能好,蒸气压低的优点,而且当用于热电子发射阴极和场致发射型冷阴极时,它们比现有技术的材料要好得多。

    Electron tube cathode and method for producing the same
    2.
    发明授权
    Electron tube cathode and method for producing the same 失效
    电子管阴极及其制造方法

    公开(公告)号:US4260665A

    公开(公告)日:1981-04-07

    申请号:US946194

    申请日:1978-09-27

    摘要: An electron tube cathode in such a structure comprising a Ni-W-Zr alloy (W content: 20-28 wt. %) having a grain size of 4-10 .mu.m as a base metal, a 1,000-2,000 A-thick Pt film provided on the surface of the base metal, and an electron emitting material layer consisting of alkaline earth metal oxide provided on the Pt film has less emission lowering and less peeling of the electron emitting material layer, even if placed in a long time service. The electron tube cathode can be produced according to a method comprising (i) a step of annealing a base metal of Ni-W-Zr alloy (W content: 20-28 wt. %) at 1,000.degree.-1,200.degree. C., (ii) a step of providing a 1,000-2,000 A thick Pt film on the surface of the base metal, and (iii) a step of providing an electron emitting material layer consisting of alkaline earth metal oxide on the Pt film.

    摘要翻译: 这种结构中的电子管阴极,其特征在于:以贱金属为基准的粒径为4-10μm的Ni-W-Zr合金(W含量:20〜28重量%),1000〜 并且由于设置在Pt膜上的由碱土类金属氧化物构成的电子发射材料层即使放置在长时间的服务中也具有较少的发射降低和较少的电子发射材料层的剥离。 电子管阴极可以根据以下方法制造:(i)在1000-1200℃下退火Ni-W-Zr合金的母材(W含量:20-28重量%)的步骤,( ii)在母材表面上提供1,000-2,000A厚的Pt膜的步骤,和(iii)在Pt膜上提供由碱土金属氧化物构成的电子发射材料层的步骤。

    Cathode for an electron source and a method of producing the same
    4.
    发明授权
    Cathode for an electron source and a method of producing the same 失效
    电子源用阴极及其制造方法

    公开(公告)号:US4193013A

    公开(公告)日:1980-03-11

    申请号:US897406

    申请日:1978-04-18

    CPC分类号: H01J1/15 H01J1/304

    摘要: A cathode for an electron source according to this invention comprises an emitter tip made of an electron emissive material, a filament for holding the emitter tip, and a binder for binding the emitter tip and the filament, the filament and the binder being made of glassy carbon. The binder can have a carbide or boride powder incorporated therein. The cathode according to this invention can be produced by using a thermosetting resin of predetermined shape as the starting material of the filament, fixing the emitter tip to a predetermined position of the thermosetting resin with the adhesive agent made of the raw thermosetting resin, and heating the resultant assembly in a non-oxidizing atmosphere to carbonize the resinous portions. This cathode is structurally very simple. Moreover, the adhesion between the filament and the emitter tip is excellent, and the emitter tip can be heated to high temperatures above 2,000.degree. C. by causing current to flow through the cathode.

    摘要翻译: 根据本发明的用于电子源的阴极包括由电子发射材料制成的发射极尖端,用于保持发射极尖端的灯丝和用于结合发射极尖端和灯丝的粘合剂,灯丝和粘合剂由玻璃状 碳。 粘合剂可以具有并入其中的碳化物或硼化物粉末。 根据本发明的阴极可以通过使用预定形状的热固性树脂作为丝的起始材料,使用由原始热固性树脂制成的粘合剂将发射极尖端固定到热固性树脂的预定位置,并加热 所得组合物在非氧化气氛中以使树脂部分碳化。 该阴极在结构上非常简单。 此外,灯丝和发射极尖端之间的粘附性优异,并且通过使电流流过阴极,可以将发射极尖端加热到高于2000℃的高温。

    Impregnated cathode
    5.
    发明授权
    Impregnated cathode 失效
    浸渍阴极

    公开(公告)号:US4400648A

    公开(公告)日:1983-08-23

    申请号:US192870

    申请日:1980-10-01

    IPC分类号: H01J1/28 H01J1/14

    CPC分类号: H01J1/28

    摘要: An impregnated cathode having a complex porous body of one-body construction which is mounted in a metal sleeve and in which a partition layer made of a porous material having a porosity less than 17% is arranged in close contact with an impregnated layer made of a porous material containing an electron emissive material. The aforementioned porous partition layer takes the place of the conventional partition plate of refractory metal. The impregnated cathode according to the present invention can not only have its size reduced without any difficulty but also enjoy a high emission current density with a remarkably small dispersion.

    摘要翻译: 具有安装在金属套筒中的单体结构的复合多孔体的浸渍阴极,其中由孔隙率小于17%的多孔材料制成的分隔层紧密接触于由 含有电子发射材料的多孔材料。 上述多孔分隔层代替常规的难熔金属隔板。 根据本发明的浸渍阴极不仅能够使其尺寸减小而且难以实现,而且还可以获得非常小的色散的高发射电流密度。

    Superconducting device
    6.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号:US5311036A

    公开(公告)日:1994-05-10

    申请号:US875431

    申请日:1992-04-29

    IPC分类号: H01L21/82 H01L39/22

    CPC分类号: H01L39/228 H01L21/82

    摘要: A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.

    摘要翻译: 一对超导电极形成为在其间插入半导体,并且通过绝缘膜在半导体上形成控制电极,以便控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定,从而以高精度稳定电极间距离,以提高器件特性的均匀性。 并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中,通过在半导体层中提供不同的杂质分布来增加增益。

    Oxide-superconducting tunneling device formed on a submicron recess in
the substrate
    7.
    发明授权
    Oxide-superconducting tunneling device formed on a submicron recess in the substrate 失效
    形成在衬底中的亚微米凹槽上的氧化物 - 超导隧穿装置

    公开(公告)号:US5198413A

    公开(公告)日:1993-03-30

    申请号:US790085

    申请日:1991-11-13

    IPC分类号: H01L39/22 H01L39/24

    摘要: An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

    摘要翻译: 氧化物超导装置包括通过隧道势垒层连接的氧化物超导体的第一和第二电极。 氧化物超导体形成在具有凹部的基板上,并且其包括沿着凹部的晶界。 隧道势垒层沿着晶界形成,并且由元素F,Cl,Br,I,C,O,S,P或N的任何材料构成,由这些元素组成的混合物和含 这种元素,该材料被引入晶粒边界附近和/或晶粒间隙附近。

    Superconducting current detecting circuit employing DC flux parametron
circuit
    9.
    发明授权
    Superconducting current detecting circuit employing DC flux parametron circuit 失效
    采用直流通量参数电路的超导电流检测电路

    公开(公告)号:US4866373A

    公开(公告)日:1989-09-12

    申请号:US291338

    申请日:1988-12-28

    摘要: A superconducting current detecting circuit which comprises a reference current generation circuit for generating a reference current and a DC flux parametron circuit for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which agrees with the input current.

    摘要翻译: 一种超导电流检测电路,包括用于产生参考电流的参考电流产生电路和用于将待检测的输入电流与参考电流进行比较的DC通量参数电路,从而产生与输入激励信号同步的脉冲, 所述脉冲根据所述输入电流和所述参考电流之间的差异而变化,所述脉冲具有取决于所述差的极性的正值或负值,所述参考电流产生电路具有用于将所述参考电流增加或减少量的装置 对应于响应于脉冲极性的脉冲数,使得参考电流产生电路产生与输入电流一致的参考电流。

    Ion beam source
    10.
    发明授权
    Ion beam source 失效
    离子束源

    公开(公告)号:US4467240A

    公开(公告)日:1984-08-21

    申请号:US344186

    申请日:1982-01-28

    摘要: An ion beam source characterized in that a needle-like tip is comprised of a carbide, a nitride, or a diboride of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb and Ta, a hexaboride of at least one element of rare earth metal elements of atomic numbers 57-70, or carbon. Stable ion beam emission of high brightness and long life can be obtained by using the needle-like tip of the said material.

    摘要翻译: 一种离子束源,其特征在于针状尖端由选自Ti,Zr,Hf,V,Nb和Ta中的至少一种元素的碳化物,氮化物或二硼化物构成,六硼化物 至少一种原子数为57-70的稀土金属元素或碳。 通过使用所述材料的针状尖端可以获得高亮度和长寿命的稳定的离子束发射。