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    METHOD OF MAKING DIELECTRIC CAPACITORS WITH INCREASED DIELECTRIC BREAKDOWN STRENGTH
    8.
    发明申请
    METHOD OF MAKING DIELECTRIC CAPACITORS WITH INCREASED DIELECTRIC BREAKDOWN STRENGTH 有权
    制造具有增强的介电断裂强度的电介质电容器的方法

    公开(公告)号：US20130335882A1

    公开(公告)日：2013-12-19

    申请号：US13523335

    申请日：2012-06-14

    申请人： Beihai Ma ,  Uthamalingam Balachandran ,  Shanshan Liu

    发明人： Beihai Ma ,  Uthamalingam Balachandran ,  Shanshan Liu

    IPC分类号： H01G4/12 ,  H01G4/10 ,  H01G4/008 ,  H01G4/00

    CPC分类号： H01G4/008 ,  H01G4/10 ,  H01G4/12 ,  H01G4/1209 ,  H01G4/30 ,  Y10T29/435

    摘要： The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

    摘要翻译： 本发明涉及一种用于制造介电陶瓷膜电容器和由其形成的陶瓷介电层压电容器的方法，所述介电陶瓷膜电容器具有增加的介电击穿强度。 本发明通过在电容器的电介质层内的电极层之间嵌入导电氧化物层来增加击穿强度。 导电氧化物层重新分布和耗散电荷，从而通过电场减轻电介质中形成的电荷浓度和微裂纹。

    Method for fabrication of high temperature superconductors
    10.
    发明授权
    Method for fabrication of high temperature superconductors 失效
    高温超导体的制造方法

    公开(公告)号：US07560291B2

    公开(公告)日：2009-07-14

    申请号：US11329937

    申请日：2006-01-11

    申请人： Uthamalingam Balachandran ,  Beihai Ma ,  Dean Miller

    发明人： Uthamalingam Balachandran ,  Beihai Ma ,  Dean Miller

    IPC分类号： H01L39/12

    CPC分类号： H01L39/2461

    摘要： A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y2O3 and then a layer of CeO2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.

    摘要翻译： 公开了一种分层制造方法及其制造方法。 衬底具有双轴织构化的MgO晶体层，其c轴相对于沉积在衬底上的衬底的平面倾斜。 在MgO上沉积一层或多层YSZ或Y2O3，然后沉积一层CeO 2。 将其c轴垂直于衬底平面的结晶超导体层沉积在CeO 2层上。 通过在阿贡国家实验室开发的倾斜衬底沉积方法将MgO层沉积在衬底上。 优选地，MgO的c轴相对于衬底的法线在约10°至约40°的范围内倾斜并且使用YBCO超导体。