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公开(公告)号：US12087828B2
公开(公告)日：2024-09-10
申请号：US16209657
申请日：2018-12-04
申请人： Uthamalingam Balachandran , Stephen E. Dorris , Beihai Ma , Tae H. Lee , David R. Forrest , Christopher Klingshirn
发明人： Uthamalingam Balachandran , Stephen E. Dorris , Beihai Ma , Tae H. Lee , David R. Forrest , Christopher Klingshirn
CPC分类号： H01L29/401 , C22B9/16 , C22C9/01 , C01B32/20
摘要： A method for preparing a covetic, nanocarbon-infused, metal composite material is described is herein. The method comprises heating a stirring molten mixture of a metal (e.g., Cu, Al, Ag, Au, Fe, Ni, Pt, Sn, Pb, Zn, Si, and the like) and carbon (e.g., graphite) at a temperature sufficient to maintain the mixture in the molten state in a reactor vessel, while passing an electric current through the molten mixture via at least two spaced electrodes submerged or partially submerged in the molten metal. Each of the electrodes has an electrical conductivity that is at least about 50 percent of the electrical conductivity of the molten mixture at the temperature of the molten mixture. Preferably, the conductivity of the electrodes is equal to or greater than the conductivity of the molten mixture.
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公开(公告)号：US10128046B2
公开(公告)日：2018-11-13
申请号：US14731738
申请日：2015-06-05
摘要： The invention provides a process for making ceramic film capacitors, the process comprising supplying a flexible substrate, depositing a first electrode on a first region of the flexible substrate, wherein the first electrode defines a first thickness, overlaying the first electrode with a dielectric film; and depositing a second electrode on the ceramic film, wherein the second electrode defines a second thickness. Also provided is a capacitor comprising flexible substrate, a first electrode deposited on said flexible substrate, a dielectric overlaying the first electrode; and a second electrode deposited on said dielectric.
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3.发明申请公开(公告)号：US20160153084A1
公开(公告)日：2016-06-02
申请号：US14489153
申请日：2014-09-17
CPC分类号： C23C24/04 , C01G23/003
摘要： The invention provides a dielectric-conductive substrate construct comprising a conductive material having a first surface and a second surface, and a dielectric film directly contacting the first surface and substantially covering the first surface, wherein the second surface is exposed to the ambient environment. Also provided is a method for producing a two component dielectric-conductive substrate, the method comprising supplying a base metal; and directly contacting a ceramic to the base metal to form a ceramic-metal interface while simultaneously preventing the formation of electrically insulative layers at the interface.
摘要翻译： 本发明提供了一种介电传导基片构造，其包括具有第一表面和第二表面的导电材料，以及直接接触第一表面并基本上覆盖第一表面的电介质膜，其中第二表面暴露于周围环境。 还提供了一种用于制造双组分介电导电基板的方法，所述方法包括供应贱金属; 并且将陶瓷直接接触贱金属以形成陶瓷 - 金属界面，同时防止在界面处形成电绝缘层。
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4.发明申请WOUND/STACKED CERAMIC FILM CAPACITORS, METHOD FOR MAKING CERAMIC FILM CAPACITORS 审中-公开绕线/堆叠陶瓷薄膜电容器，制造陶瓷薄膜电容器的方法公开(公告)号：US20150364257A1
公开(公告)日：2015-12-17
申请号：US14731738
申请日：2015-06-05
摘要： The invention provides a process for making ceramic film capacitors, the process comprising supplying a flexible substrate, depositing a first electrode on a first region of the flexible substrate, wherein the first electrode defines a first thickness, overlaying the first electrode with a dielectric film; and depositing a second electrode on the ceramic film, wherein the second electrode defines a second thickness. Also provided is a capacitor comprising flexible substrate, a first electrode deposited on said flexible substrate, a dielectric overlaying the first electrode; and a second electrode deposited on said dielectric.
摘要翻译： 本发明提供了制造陶瓷膜电容器的方法，该方法包括提供柔性基板，在柔性基板的第一区域上沉积第一电极，其中第一电极限定第一厚度，用第一电极覆盖介电膜; 以及在所述陶瓷膜上沉积第二电极，其中所述第二电极限定第二厚度。 还提供了一种电容器，其包括柔性基板，沉积在所述柔性基板上的第一电极，覆盖所述第一电极的电介质; 以及沉积在所述电介质上的第二电极。
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公开(公告)号：US08974856B2
公开(公告)日：2015-03-10
申请号：US12786940
申请日：2010-05-25
IPC分类号： B05D7/00 , C23C26/00 , C04B35/491 , C04B35/624 , C23C18/12 , H01G4/12
CPC分类号： H01G13/04 , C04B35/491 , C04B35/624 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3296 , C04B2235/441 , C04B2235/443 , C04B2235/449 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , C04B2235/768 , C23C18/1204 , C23C18/1208 , C23C18/1225 , C23C18/1241 , C23C18/1254 , C23C18/1283 , C23C18/1295 , C23C26/00 , H01G4/1218 , H01G4/1245 , Y10T428/24355 , Y10T428/266
摘要： The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.
摘要翻译： 本发明提供一种在铜箔上制造陶瓷膜的方法。 该方法包括将一层溶胶 - 凝胶组合物涂覆在铜箔上。 溶胶 - 凝胶组合物包含悬浮在2-甲氧基乙醇中的陶瓷材料的前体。 然后将溶胶 - 凝胶层在高达约250℃的温度下干燥。然后将干燥的层在约300至约450℃的温度下热解，以从陶瓷前体形成陶瓷膜。 陶瓷膜然后在约600至约750℃的温度下结晶。干燥，热解和结晶在惰性气体流下进行。 在一些实施方案中，将另外的溶胶 - 凝胶组合物层施加到陶瓷膜上，并重复干燥，热解和结晶步骤以使附加层在铜箔上形成较厚的陶瓷层。 如果需要，该过程可重复一次或多次。
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公开(公告)号：US06579360B2
公开(公告)日：2003-06-17
申请号：US09905509
申请日：2001-07-13
IPC分类号： C30B2502
CPC分类号： H01L39/2487 , H01L39/2432 , H01L39/2448
摘要： A method of forming a biaxially aligned superconductor on a non-biaxially aligned substrate substantially chemically inert to the biaxially aligned superconductor comprising is disclosed. A non-biaxially aligned substrate chemically inert to the superconductor is provided and a biaxially aligned superconductor material is deposited directly on the non-biaxially aligned substrate. A method forming a plume of superconductor material and contacting the plume and the non-biaxially aligned substrate at an angle greater than 0° and less than 90° to deposit a biaxially aligned superconductor on the non-biaxially aligned substrate is also disclosed. Various superconductors and substrates are illustrated.
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公开(公告)号：US09834843B2
公开(公告)日：2017-12-05
申请号：US15165427
申请日：2016-05-26
IPC分类号： C23C18/00 , C23C18/12 , H01B19/04 , H01L21/02 , C04B35/468 , C04B35/493 , C04B35/624 , C04B35/634 , C23C18/20 , H01L21/3105 , H01L49/02
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
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公开(公告)号：US20160278215A1
公开(公告)日：2016-09-22
申请号：US15164169
申请日：2016-05-25
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译： 本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。
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公开(公告)号：US20130071670A1
公开(公告)日：2013-03-21
申请号：US13237487
申请日：2011-09-20
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译： 本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。
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公开(公告)号：US20120257324A1
公开(公告)日：2012-10-11
申请号：US13528544
申请日：2012-06-20
CPC分类号： C04B35/491 , C04B35/624 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3296 , C04B2235/441 , C04B2235/443 , C04B2235/449 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , C04B2235/768 , C23C26/00 , C23C28/04 , C23C28/30 , H01G4/1218 , H01G4/1245 , Y02T10/7022
摘要： The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.
摘要翻译： 本发明提供了一种层叠电容器配置，其包括各自具有低至20微米厚度的亚基。 还提供了组合电容器和印刷线路板，其中电容器被线路板封装。 本发明的电容器适用于微电子应用和大功率应用，无论是交流直流还是直流到交流，直流到直流。
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