摘要:
Multilayer test probe structures are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments each probe structure may include a plurality of contact arms or contact tips that are used for contacting a specific pad or plurality of pads wherein the arms and/or tips are configured in such away so as to provide a scrubbing motion (e.g. a motion perpendicular to a primary relative movement motion between a probe carrier and the IC) as the probe element or array is made to contact an IC, or the like, and particularly when the motion between the probe or probes and the IC occurs primarily in a direction that is perpendicular to a plane of a surface of the IC. In some embodiments arrays of multiple probes are provided and even formed in desired relative position simultaneously.
摘要:
Multilayer probe structures for testing semiconductor die are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments the structures may include generally helical shaped configurations, helical shape configurations with narrowing radius as the probe extends outward from a substrate, bellows-like configurations, and the like. In some embodiments arrays of multiple probes are provided.
摘要:
Multilayer probe structures for testing or otherwise making electrical contact with semiconductor die or other electronic components are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments the structures may include configurations intended to enhance functionality, buildability, or both.
摘要:
Multilayer probe structures for testing semiconductor die are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments the structures may include generally helical shaped configurations, helical shape configurations with narrowing radius as the probe extends outward from a substrate, bellows-like configurations, and the like. In some embodiments arrays of multiple probes are provided.
摘要:
Multilayer probe structures for testing or otherwise making electrical contact with semiconductor die or other electronic components are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments the structures may include configurations intended to enhance functionality, buildability, or both.
摘要:
Multilayer test probe structures are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments each probe structure may include a plurality of contact arms or contact tips that are used for contacting a specific pad or plurality of pads wherein the arms and/or tips are configured in such away so as to provide a scrubbing motion (e.g. a motion perpendicular to a primary relative movement motion between a probe carrier and the IC) as the probe element or array is made to contact an IC, or the like, and particularly when the motion between the probe or probes and the IC occurs primarily in a direction that is perpendicular to a plane of a surface of the IC. In some embodiments arrays of multiple probes are provided and even formed in desired relative position simultaneously.
摘要:
Multilayer test probe structures are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. In some embodiments each probe structure may include a plurality of contact arms or contact tips that are used for contacting a specific pad or plurality of pads wherein the arms and/or tips are configured in such away so as to provide a scrubbing motion (e.g. a motion perpendicular to a primary relative movement motion between a probe carrier and the IC) as the probe element or array is made to contact an IC, or the like, and particularly when the motion between the probe or probes and the IC occurs primarily in a direction that is perpendicular to a plane of a surface of the IC. In some embodiments arrays of multiple probes are provided and even formed in desired relative position simultaneously.
摘要:
Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of the tip material around carefully sized and placed etching shields, via hot pressing, and the like.
摘要:
Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in over exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of a the tip material around carefully sized placed etching shields, via hot pressing, and the like.
摘要:
Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of the tip material around carefully sized and placed etching shields, via hot pressing, and the like.