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1.发明授权Method for etching a silicon-containing ARC layer to reduce roughness and CD 有权用于蚀刻含硅ARC层以减少粗糙度和CD的方法公开(公告)号：US07998872B2
公开(公告)日：2011-08-16
申请号：US12026913
申请日：2008-02-06
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/321 , H01J37/32192 , H01J37/3266 , H01J37/32697 , H01L21/0337 , H01L21/3086 , H01L21/31144
摘要： A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer and a first edge roughness is reduced to a second edge roughness in the silicon-containing ARC layer.
摘要翻译： 描述了在衬底上干燥显影具有含硅抗反射涂层（ARC）层的多层掩模的方法。 该方法包括在衬底上形成多层掩模，其中多层掩模包括覆盖含硅ARC层的光刻层。 然后使用光刻工艺在光刻层中形成特征图案，其中特征图案包括第一临界尺寸（CD）。 此后，使用干等离子体蚀刻工艺将特征图案从光刻层转移到含硅ARC层，其中光刻层中的第一CD被还原成含硅层中的第二CD，并且第一边缘粗糙度 在含硅ARC层中减少到第二边缘粗糙度。
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2.发明申请METHOD FOR ETCHING A SILICON-CONTAINING ARC LAYER TO REDUCE ROUGHNESS AND CD 有权用于蚀刻含硅的ARC层以减少粗糙度和CD的方法公开(公告)号：US20090197420A1
公开(公告)日：2009-08-06
申请号：US12026913
申请日：2008-02-06
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/321 , H01J37/32192 , H01J37/3266 , H01J37/32697 , H01L21/0337 , H01L21/3086 , H01L21/31144
摘要： A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer and a first edge roughness is reduced to a second edge roughness in the silicon-containing ARC layer.
摘要翻译： 描述了在衬底上干燥显影具有含硅抗反射涂层（ARC）层的多层掩模的方法。 该方法包括在衬底上形成多层掩模，其中多层掩模包括覆盖含硅ARC层的光刻层。 然后使用光刻工艺在光刻层中形成特征图案，其中特征图案包括第一临界尺寸（CD）。 此后，使用干等离子体蚀刻工艺将特征图案从光刻层转移到含硅ARC层，其中光刻层中的第一CD被还原成含硅层中的第二CD，并且第一边缘粗糙度 在含硅ARC层中减少到第二边缘粗糙度。
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3.发明授权公开(公告)号：US08252192B2
公开(公告)日：2012-08-28
申请号：US12411565
申请日：2009-03-26
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76816
摘要： A method of pattern etching a thin film on a substrate is described. The method comprises preparing a film stack on a substrate, wherein the film stack comprises a dielectric layer formed on the substrate and a mask layer formed above the dielectric layer. A pattern is created in the mask layer, and the pattern is transferred from the mask layer to the dielectric layer by performing a plasma etching process. While transferring the pattern to the dielectric layer, the mask layer is substantially removed using the plasma etching process. The plasma etching process can use a process gas comprising a first gaseous component that etches the dielectric layer at a greater rate than the mask layer, and a second gaseous component that etches the dielectric layer at a lesser rate than the mask layer.
摘要翻译： 描述了在衬底上图案蚀刻薄膜的方法。 该方法包括在衬底上制备膜堆叠，其中膜堆叠包括形成在衬底上的电介质层和形成在电介质层上方的掩模层。 在掩模层中形成图案，通过进行等离子体蚀刻工艺，将图案从掩模层转印到电介质层。 当将图案转印到电介质层时，使用等离子体蚀刻工艺基本上去除掩模层。 等离子体蚀刻工艺可以使用包括以比掩模层更高的速率蚀刻电介质层的第一气态组分的工艺气体和以比掩模层更低的速率蚀刻介电层的第二气体组分。
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公开(公告)号：US07700494B2
公开(公告)日：2010-04-20
申请号：US11024747
申请日：2004-12-30
申请人： Vaidyanathan Balasubramaniam , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa, legal representative
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063
摘要： A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译： 提供了一种用于低压等离子体灰化以去除光刻胶残余物和蚀刻在电介质层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用包含含氧气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的氟碳残余物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。
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公开(公告)号：US07169440B2
公开(公告)日：2007-01-30
申请号：US10259768
申请日：2002-09-30
IPC分类号： B05D5/06
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译： 提供了一种用于等离子体灰化以去除光刻胶残留物的蚀刻残留物和蚀刻在电介质层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用包含含氧气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的氟碳残余物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。
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公开(公告)号：US06670276B1
公开(公告)日：2003-12-30
申请号：US09691202
申请日：2000-10-19
IPC分类号： H01L2120
CPC分类号： H01L21/31116 , G03F7/427 , H01J2237/3342 , H01L21/31138 , H01L21/67069
摘要： A wafer W is placed on a lower electrode 106 provided inside a processing chamber 102 of a plasma processing apparatus 100. A film constituted an organic polysiloxane, which is a Low-K material is formed at the wafer W. Plasma is generated inside the processing chamber 102 to implement an etching process by using a photoresist film on the organic polysiloxane film as a mask and an opening pattern in which a portion of the organic polysiloxane film is exposed is formed. After the etching process, the wafer W is left inside the processing chamber 102. The pressure inside the processing chamber 102 is set at a level within the range of 30 mTorr (4.00 Pa)˜150 mTorr (20.0 Pa) by inducing a processing gas into the processing chamber 102 and evacuating the gas from the processing chamber 102. At the pressure level the set, the gas inside the processing chamber 102 is raised to plasma and the photoresist film is ashed. Thus, a plasma processing method which makes it possible to remove the photoresist film on the organic polysiloxane film without compromising the low dielectric constant characteristics of the organic polysiloxane film is achieved.
摘要翻译： 将晶片W放置在设置在等离子体处理设备100的处理室102内部的下电极106上。构成有机聚硅氧烷，其是在晶片W上形成的低K材料。等离子体在处理 通过使用有机聚硅氧烷膜上的光致抗蚀剂膜作为掩模来实现蚀刻工艺，并且形成有机聚硅氧烷膜的暴露部分的开口图案。 在蚀刻处理之后，将晶片W留在处理室102的内部。处理室102内的压力通过引入处理气体而设定在30mTorr（4.00Pa）〜150mTorr（20.0Pa）的范围内的水平 进入处理室102并从处理室102排出气体。在压力水平下，处理室102内的气体升高到等离子体，并且光致抗蚀剂膜被灰化。 因此，可以实现能够在不损害有机聚硅氧烷膜的低介电常数特性的情况下除去有机聚硅氧烷膜上的光致抗蚀剂膜的等离子体处理方法。
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公开(公告)号：US08048325B2
公开(公告)日：2011-11-01
申请号：US11970062
申请日：2008-01-07
申请人： Vaidyanathan Balasubramaniam , Koichiro Inazawa , Rie Inazawa , Rich Wise , Arpan Mahorawala , Siddhartha Panda
发明人： Vaidyanathan Balasubramaniam , Koichiro Inazawa , Rie Inazawa , Rich Wise , Arpan Mahorawala , Siddhartha Panda
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01L21/31138
摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
摘要翻译： 一种在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氨（NH 3）和钝化气体的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。 处理气体可以例如构成NH 3和烃气体，例如C 2 H 4，CH 4，C 2 H 2，C 2 H 6，C 3 H 4，C 3 H 6，C 3 H 8，C 4 H 6，C 4 H 8，C 4 H 10，C 5 H 8，C 5 H 10，C 6 H 6，C 6 H 10和C 6 H 12中的至少一种 。 另外，工艺化学可以进一步包括添加氦。 本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氨（NH 3）和钝化气体的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。
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公开(公告)号：US07465673B2
公开(公告)日：2008-12-16
申请号：US10736782
申请日：2003-12-17
申请人： Yoshiki Igarashi , Kouichiro Inazawa , Kimihiro Higuchi , Vaidyanathan Balasubramaniam , Eiichi Nishimura , Ralph Kim , Philip Sansone , Masaaki Hagihara
发明人： Yoshiki Igarashi , Kouichiro Inazawa , Kimihiro Higuchi , Vaidyanathan Balasubramaniam , Eiichi Nishimura , Ralph Kim , Philip Sansone , Masaaki Hagihara
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , G03F7/091 , H01L21/31144 , H01L21/76802
摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH3/O2, N2/H2/O2, N2/H2/CO, NH3/CO, or NH3/CO/O2 based chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).
摘要翻译： 一种用于在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氮（N），氢（H）和氧（O）的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。 工艺气体可以例如构成基于NH 3 / O 2，N 2 / H 2 / O 2，N 2 / H 2 / CO，NH 3 / CO或NH 3 / CO / O 2的化学。 另外，工艺化学可以进一步包括添加氦。 本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氮（N），氢（H）和氧（O）的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。
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公开(公告)号：US20080135517A1
公开(公告)日：2008-06-12
申请号：US11608872
申请日：2006-12-11
IPC分类号： C23F1/02 , H01L21/3065
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063
摘要： A method and apparatus for removing residue, such as etch reside, from a substrate with substantially reduced damage to the substrate in a plasma processing system is described. A plasma ashing process comprising carbon dioxide (CO2) and optionally a passivation gas, such as a hydrocarbon gas, i.e., CxHy, wherein x, y represent integers greater than or equal to unity, is used to remove residue while reducing damage to underlying dielectric layers. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble gas (i.e., He, Ne, Ar, Kr, Xe, Rn).
摘要翻译： 描述了一种用于从等离子体处理系统中对衬底具有基本上减少的损伤的衬底去除残留物（例如蚀刻）的方法和装置。 包括二氧化碳（CO 2 H 2）和任选的钝化气体的诸如烃气体的等离子体灰化过程，例如C 2 H 2 O ，其中x，y表示大于或等于1的整数，用于除去残留物，同时减少对下面的介电层的损伤。 另外，工艺化学可以进一步包括添加惰性气体，例如Noble气体（即He，Ne，Ar，Kr，Xe，Rn）。
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公开(公告)号：US20070231992A1
公开(公告)日：2007-10-04
申请号：US11390192
申请日：2006-03-28
IPC分类号： H01L21/8238
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32357 , H01J37/3244 , H01L21/02057
摘要： A method of using a post-etch treatment system for removing photoresist and etch residue formed during an etching process is described. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The method comprises introducing a NxOy based process gas to the radical generation system.
摘要翻译： 描述了使用蚀刻后处理系统去除在蚀刻过程中形成的光致抗蚀剂和蚀刻残留物的方法。 例如，蚀刻残渣可以包括含卤素材料。 蚀刻后处理系统包括真空室，耦合到真空室的自由基产生系统，耦合到自由基产生系统并被配置为在基板上分布反应性基团的自由基气体分配系统，以及耦合到基板的高温基座 真空室并构造成支撑基板。 该方法包括向基团产生系统引入基于N x O 2 O 3的工艺气体。
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