摘要:
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
摘要翻译:一种在等离子体处理系统中蚀刻衬底上的有机抗反射涂层(ARC)层的方法,包括:引入包含氨(NH 3)和钝化气体的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。 处理气体可以例如构成NH 3和烃气体,例如C 2 H 4,CH 4,C 2 H 2,C 2 H 6,C 3 H 4,C 3 H 6,C 3 H 8,C 4 H 6,C 4 H 8,C 4 H 10,C 5 H 8,C 5 H 10,C 6 H 6,C 6 H 10和C 6 H 12中的至少一种 。 另外,工艺化学可以进一步包括添加氦。 本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法,其中所述方法包括:在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氨(NH 3)和钝化气体的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。
摘要:
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
摘要:
A method and system for etching an organic layer on a substrate in a plasma processing system comprising: introducing a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble gas (i.e., He, Ne, Ar, Kr, Xe, Rn). The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an organic layer on the thin film; forming a photoresist pattern on the organic layer; and transferring the photoresist pattern to the organic layer with an etch process using a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity.
摘要翻译:一种用于在等离子体处理系统中蚀刻衬底上的有机层的方法和系统,包括:引入包含N x O O y O y的工艺气体,其中x,y表示更大的整数 大于或等于统一 另外,工艺化学可以进一步包括添加惰性气体,例如Noble气体(即He,Ne,Ar,Kr,Xe,Rn)。 本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法,其中所述方法包括:在所述衬底上形成所述薄膜; 在薄膜上形成有机层; 在有机层上形成光致抗蚀剂图案; 以及使用包括N x O x O y X y的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到有机层,其中x,y表示大于或等于1的整数。
摘要:
A semiconductor structure having improved carrier mobility is provided. The semiconductor structures includes a hybrid oriented semiconductor substrate having at least two planar surfaces of different crystallographic orientation, and at least one CMOS device located on each of the planar surfaces of different crystallographic orientation, wherein each CMOS device has a stressed channel. The present invention also provides methods of fabricating the same. In general terms, the inventive method includes providing a hybrid oriented substrate having at least two planar surfaces of different crystallographic orientation, and forming at least one CMOS device on each of the planar surfaces of different crystallographic orientation, wherein each CMOS device has a stressed channel.
摘要:
NMOS and PMOS device structures with separately strained channel regions and methods of their fabrication are disclosed. The source and the drain of the NMOS device is epitaxially grown of a material which causes a shift in the strain of the NMOS device channel in the tensile direction. While, the source and the drain of the PMOS device is epitaxially grown of a material which causes a shift in the strain of the PMOS device channel in the compressive direction.
摘要:
A method forms a gate conductor over a substrate, forms spacers (e.g., nitride spacers) on sides of the gate conductor, and implants an impurity into exposed regions of the substrate not protected by the gate conductor and the spacers. Then the method forms a silicide on surfaces of the exposed regions of the substrate. The method forms a conformal protective layer (e.g., an oxide or other similar material) over the silicide, the spacers, and the gate conductor. Next, the method forms a non-conformal sacrificial layer (e.g., nitride or other material that can be selectively removed with respect to the protective layer) over the protective layer. A subsequent partial etching process partially etches the sacrificial layer such that relatively thinner regions of the sacrificial layer that are over the spacers are completely removed and the relatively thicker regions of the sacrificial layer that are over the substrate are not removed. The next step in the method removes only those portions of the protective layer that cover the spacers, without removing the portions of the protective layer that cover the silicide. As the spacers are now exposed and the silicide is protected by the protective and sacrificial layers, the method can safely remove the spacers without affecting the silicide.
摘要:
A semiconductor structure includes a base semiconductor substrate having a doped region located therein, and an epitaxial region located over the doped region. The semiconductor structure also includes a final isolation region located with the doped region and the epitaxial region. The final isolation region has a greater linewidth within the doped region than within the epitaxial region. A method for fabricating the semiconductor structure provides for forming the doped region prior to the epitaxial region. The doped region may be formed with reduced well implant energy and reduced lateral straggle. The final isolation region with the variable linewidth provides a greater effective isolation depth than an actual trench isolation depth.
摘要:
Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.
摘要翻译:公开了采用包括全氟环戊烯(C 5 H 5 F 8 N)和三氟化氮(NF 3 3))的气流的多晶硅蚀刻方法。 蚀刻方法实现了基本垂直的轮廓和更平滑的表面,并且可以实现低至3.0nm的3σ变化。
摘要:
A method for preparing a substrate for epitaxial crystal growth thereon includes performing a reactive ion etch (RIE) on a selected area of the substrate to be prepared for epitaxial crystal growth, discontinuing the introduction of an etchant species associated with the RIE, and introducing a monolayer forming species into a chamber containing the substrate. The neutral species is selected so as to form a passivating monolayer on the selected area of the substrate, wherein the monolayer is resistant to the formation of native oxide thereon.
摘要:
A process for forming sublithographic structures such as fins employs a hardmask protective layer above a hardmask to absorb damage during a dry etching step, thereby preserving symmetry in the hardmask and eliminating a source of defects.