公开(公告)号：US20080014694A1

公开(公告)日：2008-01-17

申请号：US11488587

申请日：2006-07-17

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/8244

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效氧化，以形成电阻率不大于1欧姆·厘米的导电性TiO 2，其中x越大 0和y为0至1.4。 电容器电介质形成在导电TiO 2上。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US20120098093A1

公开(公告)日：2012-04-26

申请号：US13338527

申请日：2011-12-28

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L29/02

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效地氧化，形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0，y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US08105896B2

公开(公告)日：2012-01-31

申请号：US12480496

申请日：2009-06-08

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/8242

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效地氧化，形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0，y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US20090244806A1

公开(公告)日：2009-10-01

申请号：US12480496

申请日：2009-06-08

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01G4/008 ,  H01G9/00

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN的材料的TiN被有效地氧化以形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0且y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US08497566B2

公开(公告)日：2013-07-30

申请号：US13338527

申请日：2011-12-28

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/02

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效地氧化，形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0，y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US07635623B2

公开(公告)日：2009-12-22

申请号：US11488587

申请日：2006-07-17

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/8242

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN的材料的TiN被有效地氧化以形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0且y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US20110020999A1

公开(公告)日：2011-01-27

申请号：US12895535

申请日：2010-09-30

申请人： Noel Rocklein ,  Chris M. Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

发明人： Noel Rocklein ,  Chris M. Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

IPC分类号： H01L21/02 ,  H01L21/31 ,  H01L21/283

CPC分类号： H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

摘要翻译： 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成， 等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

公开(公告)号：US20100315760A1

公开(公告)日：2010-12-16

申请号：US12483474

申请日：2009-06-12

申请人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

发明人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

IPC分类号： H01G4/10

CPC分类号： H01L28/56 ,  H01G4/10 ,  H01L27/108

摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

公开(公告)号：US07115929B2

公开(公告)日：2006-10-03

申请号：US10822062

申请日：2004-04-08

申请人： Vishwanath Bhat ,  F. Daniel Gealy ,  Cancheepuram V. Srividya

发明人： Vishwanath Bhat ,  F. Daniel Gealy ,  Cancheepuram V. Srividya

IPC分类号： H01L29/72

CPC分类号： H01L28/56 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。

公开(公告)号：US07056784B2

公开(公告)日：2006-06-06

申请号：US10914824

申请日：2004-08-09

申请人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

IPC分类号： H01L21/8242

CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.

摘要翻译： 形成电容器的方法包括在衬底上形成导电金属第一电极层，与氧化温度以下的任何氧化程度相比，导电金属可在氧化温度以上高于可氧化的程度。 在导电金属第一电极层上有效形成电容器电介质区域的第一部分氧化物材料的条件下，在氧化温度以下将至少一种含氧气体前体供给至导电金属第一电极层。 至少一种蒸气前体在高于氧化温度的温度下在第一部分上进料，有效地在第一部分上形成电容器电介质区域的第二部分氧化物材料。 第一部分的氧化物材料和第二部分的氧化物材料在化学组成中是常见的。 在电容器电介质区域的第二部分氧化物材料上形成导电的第二电极层。