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1.发明授权Semiconductor constructions comprising aluminum oxide and metal oxide dielectric materials 失效包括氧化铝和金属氧化物电介质材料的半导体结构公开(公告)号：US07115929B2
公开(公告)日：2006-10-03
申请号：US10822062
申请日：2004-04-08
IPC分类号： H01L29/72
CPC分类号： H01L28/56 , H01L21/02175 , H01L21/02178 , H01L21/022 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.
摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。
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公开(公告)号：US07439564B2
公开(公告)日：2008-10-21
申请号：US11123380
申请日：2005-05-05
IPC分类号： H01L27/108
CPC分类号： H01L28/56 , H01L21/02175 , H01L21/02178 , H01L21/022 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.
摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。
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公开(公告)号：US08110469B2
公开(公告)日：2012-02-07
申请号：US11216542
申请日：2005-08-30
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/31 , H01L21/469
CPC分类号： H01L21/022 , C23C16/45529 , H01L21/02148 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31641 , H01L21/31645 , H01L28/40 , H01L28/56 , H01L29/517 , H01L29/78
摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
摘要翻译： 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。
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公开(公告)号：US08049304B2
公开(公告)日：2011-11-01
申请号：US12422788
申请日：2009-04-13
申请人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
发明人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
IPC分类号： H01L29/92
CPC分类号： C23C16/405 , C23C16/40 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.
摘要翻译： 本发明包括ALD型方法，其中使用两种或更多种不同的前体与一种或多种反应物形成材料。 在特定方面，前体是铪和铝，唯一的反应物是臭氧，并且该材料主要是四方晶相中的铪氧化物。
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公开(公告)号：US07141847B2
公开(公告)日：2006-11-28
申请号：US11015689
申请日：2004-12-17
IPC分类号： H01L29/94 , H01L21/842
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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公开(公告)号：US20090195967A1
公开(公告)日：2009-08-06
申请号：US12422788
申请日：2009-04-13
申请人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
发明人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
CPC分类号： C23C16/405 , C23C16/40 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.
摘要翻译： 本发明包括ALD型方法，其中使用两种或更多种不同的前体与一种或多种反应物形成材料。 在特定方面，前体是铪和铝，唯一的反应物是臭氧，并且该材料主要是四方晶相中的铪氧化物。
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7.发明授权ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates 失效其中两种或更多种不同的前体与一种或多种反应物一起用于在基材上形成材料的ALD方法公开(公告)号：US07537804B2
公开(公告)日：2009-05-26
申请号：US11413466
申请日：2006-04-28
申请人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
发明人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
IPC分类号： C23C16/455
CPC分类号： C23C16/405 , C23C16/40 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M2-M1-R- and M1-(R-M2-)x: where x is at least 2; where M1 is a first metal-containing precursor comprising a first metal, M2 is a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals. The ALD pulse sequence forms material over a substrate, and such material includes the first and second metals. The hyphen between pulses means that the second pulse directly follows the first pulse, with the term “directly follows” indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.
摘要翻译： 在一些实施例中，本发明可以包括使用具有脉冲子集M2-M1-R-和M1-（R-M2-）x的ALD脉冲序列的至少一次迭代; 其中x至少为2; 其中M1是包含第一金属的第一含金属前体，M2是包含不同于第一金属的第二金属的第二含金属前体，R是与第一和第二金属中的一种或两种反应的反应物。 ALD脉冲序列在衬底上形成材料，并且这种材料包括第一和第二金属。 脉冲之间的连字符意味着第二脉冲直接跟随第一脉冲，术语“直接跟随”表示第二脉冲紧接在第一脉冲之后，或者只有清除分离第一和第二脉冲。
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公开(公告)号：US08299462B2
公开(公告)日：2012-10-30
申请号：US13280556
申请日：2011-10-25
申请人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
发明人： Cancheepuram V. Srividya , Noel Rocklein , John Vernon , Jeff Nelson , F. Daniel Gealy , David Korn
IPC分类号： H01L29/12
CPC分类号： C23C16/405 , C23C16/40 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L28/40
摘要： The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.
摘要翻译： 本发明包括来自ALD型方法的介电模式，其中使用两种或更多种不同的前体与一种或多种反应物形成电介质材料。 在特定方面，前体是由铪前体制成的材料的铝和铪和/或锆，氧化铪主要是四方晶相。
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公开(公告)号：US07687844B2
公开(公告)日：2010-03-30
申请号：US12052124
申请日：2008-03-20
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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公开(公告)号：US06858894B2
公开(公告)日：2005-02-22
申请号：US10773780
申请日：2004-02-09
IPC分类号： H01L21/02 , H01L21/334 , H01L21/4763 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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