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    Semiconductor Processing Methods, And Methods Of Forming Isolation Structures
    1.
    发明申请
    Semiconductor Processing Methods, And Methods Of Forming Isolation Structures 有权
    半导体加工方法和形成隔离结构的方法

    公开(公告)号：US20120329231A1

    公开(公告)日：2012-12-27

    申请号：US13603100

    申请日：2012-09-04

    申请人： Vladimir Mikhalev ,  Jim Fulford ,  Yongjun Jeff Hu ,  Gordon A. Haller ,  Lequn Liu

    发明人： Vladimir Mikhalev ,  Jim Fulford ,  Yongjun Jeff Hu ,  Gordon A. Haller ,  Lequn Liu

    IPC分类号： H01L21/762 ,  H01L21/336

    CPC分类号： H01L21/823462 ,  H01L21/02107 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/265 ,  H01L21/76224 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823425 ,  H01L21/823481 ,  H01L29/66575 ,  H01L29/78 ,  H01L29/7846

    摘要： Some embodiments include methods of forming isolation structures. A semiconductor base may be provided to have a crystalline semiconductor material projection between a pair of openings. SOD material (such as, for example, polysilazane) may be flowed within said openings to fill the openings. After the openings are filled with the SOD material, one or more dopant species may be implanted into the projection to amorphize the crystalline semiconductor material within an upper portion of said projection. The SOD material may then be annealed at a temperature of at least about 400° C. to form isolation structures. Some embodiments include semiconductor constructions that include a semiconductor material base having a projection between a pair of openings. The projection may have an upper region over a lower region, with the upper region being at least 75% amorphous, and with the lower region being entirely crystalline.

    摘要翻译： 一些实施方案包括形成隔离结构的方法。 可以提供半导体基底以在一对开口之间具有晶体半导体材料突起。 SOD材料（例如，聚硅氮烷）可以在所述开口内流动以填充开口。 在用SOD材料填充开口之后，可以将一种或多种掺杂剂物质注入到投影中，使晶体半导体材料在所述突起的上部非晶化。 然后可以在至少约400℃的温度下对SOD材料进行退火以形成隔离结构。 一些实施例包括半导体结构，其包括在一对开口之间具有突起的半导体材料基底。 突起可以在下部区域上方具有上部区域，其中上部区域为至少75％的无定形，并且下部区域是完全结晶的。

    Semiconductor processing methods, and methods of forming isolation structures
    2.
    发明授权
    Semiconductor processing methods, and methods of forming isolation structures 有权
    半导体加工方法和形成隔离结构的方法

    公开(公告)号：US08906771B2

    公开(公告)日：2014-12-09

    申请号：US13603100

    申请日：2012-09-04

    申请人： Vladimir Mikhalev ,  Jim Fulford ,  Yongjun Jeff Hu ,  Gordon A. Haller ,  Lequn Liu

    发明人： Vladimir Mikhalev ,  Jim Fulford ,  Yongjun Jeff Hu ,  Gordon A. Haller ,  Lequn Liu

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/02 ,  H01L21/265 ,  H01L29/78 ,  H01L29/66

    CPC分类号： H01L21/823462 ,  H01L21/02107 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/265 ,  H01L21/76224 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823425 ,  H01L21/823481 ,  H01L29/66575 ,  H01L29/78 ,  H01L29/7846

    摘要： Some embodiments include methods of forming isolation structures. A semiconductor base may be provided to have a crystalline semiconductor material projection between a pair of openings. SOD material (such as, for example, polysilazane) may be flowed within said openings to fill the openings. After the openings are filled with the SOD material, one or more dopant species may be implanted into the projection to amorphize the crystalline semiconductor material within an upper portion of said projection. The SOD material may then be annealed at a temperature of at least about 400° C. to form isolation structures. Some embodiments include semiconductor constructions that include a semiconductor material base having a projection between a pair of openings. The projection may have an upper region over a lower region, with the upper region being at least 75% amorphous, and with the lower region being entirely crystalline.

    摘要翻译： 一些实施方案包括形成隔离结构的方法。 可以提供半导体基底以在一对开口之间具有晶体半导体材料突起。 SOD材料（例如，聚硅氮烷）可以在所述开口内流动以填充开口。 在用SOD材料填充开口之后，可以将一种或多种掺杂剂物质注入到投影中，使晶体半导体材料在所述突起的上部非晶化。 然后可以在至少约400℃的温度下对SOD材料进行退火以形成隔离结构。 一些实施例包括半导体结构，其包括在一对开口之间具有突起的半导体材料基底。 突起可以在下部区域上方具有上部区域，其中上部区域为至少75％的无定形，并且下部区域是完全结晶的。

    Semiconductor constructions
    3.
    发明授权
    Semiconductor constructions 失效
    半导体结构

    公开(公告)号：US08274081B2

    公开(公告)日：2012-09-25

    申请号：US12728942

    申请日：2010-03-22

    申请人： Vladimir Mikhalev ,  Jim Fulford ,  Yongjun Jeff Hu ,  Gordon A. Haller ,  Lequn Liu

    发明人： Vladimir Mikhalev ,  Jim Fulford ,  Yongjun Jeff Hu ,  Gordon A. Haller ,  Lequn Liu

    IPC分类号： H01L29/04 ,  H01L33/16

    CPC分类号： H01L21/823462 ,  H01L21/02107 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/265 ,  H01L21/76224 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823425 ,  H01L21/823481 ,  H01L29/66575 ,  H01L29/78 ,  H01L29/7846

    摘要： Some embodiments include methods of forming isolation structures. A semiconductor base may be provided to have a crystalline semiconductor material projection between a pair of openings. SOD material (such as, for example, polysilazane) may be flowed within said openings to fill the openings. After the openings are filled with the SOD material, one or more dopant species may be implanted into the projection to amorphize the crystalline semiconductor material within an upper portion of said projection. The SOD material may then be annealed at a temperature of at least about 400° C. to form isolation structures. Some embodiments include semiconductor constructions that include a semiconductor material base having a projection between a pair of openings. The projection may have an upper region over a lower region, with the upper region being at least 75% amorphous, and with the lower region being entirely crystalline.

    摘要翻译： 一些实施方案包括形成隔离结构的方法。 可以提供半导体基底以在一对开口之间具有晶体半导体材料突起。 SOD材料（例如，聚硅氮烷）可以在所述开口内流动以填充开口。 在用SOD材料填充开口之后，可以将一种或多种掺杂剂物质注入到投影中，使晶体半导体材料在所述突起的上部非晶化。 然后可以在至少约400℃的温度下对SOD材料进行退火以形成隔离结构。 一些实施例包括半导体结构，其包括在一对开口之间具有突起的半导体材料基底。 突起可以在下部区域上方具有上部区域，其中上部区域为至少75％的无定形，并且下部区域是完全结晶的。

    Semiconductor Constructions, Semiconductor Processing Methods, And Methods Of Forming Isolation Structures
    4.
    发明申请
    Semiconductor Constructions, Semiconductor Processing Methods, And Methods Of Forming Isolation Structures 失效
    半导体结构，半导体加工方法和形成隔离结构的方法

    公开(公告)号：US20110227071A1

    公开(公告)日：2011-09-22

    申请号：US12728942

    申请日：2010-03-22

    申请人： Vladimir Mikhalev ,  Jim Fulford ,  Yongjun Jeff Hu ,  Gordon A. Haller ,  Lequn Liu

    发明人： Vladimir Mikhalev ,  Jim Fulford ,  Yongjun Jeff Hu ,  Gordon A. Haller ,  Lequn Liu

    IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L21/22 ,  H01L21/336

    CPC分类号： H01L21/823462 ,  H01L21/02107 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/265 ,  H01L21/76224 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823425 ,  H01L21/823481 ,  H01L29/66575 ,  H01L29/78 ,  H01L29/7846

    摘要： Some embodiments include methods of forming isolation structures. A semiconductor base may be provided to have a crystalline semiconductor material projection between a pair of openings. SOD material (such as, for example, polysilazane) may be flowed within said openings to fill the openings. After the openings are filled with the SOD material, one or more dopant species may be implanted into the projection to amorphize the crystalline semiconductor material within an upper portion of said projection. The SOD material may then be annealed at a temperature of at least about 400° C. to form isolation structures. Some embodiments include semiconductor constructions that include a semiconductor material base having a projection between a pair of openings. The projection may have an upper region over a lower region, with the upper region being at least 75% amorphous, and with the lower region being entirely crystalline.

    摘要翻译： 一些实施方案包括形成隔离结构的方法。 可以提供半导体基底以在一对开口之间具有晶体半导体材料突起。 SOD材料（例如，聚硅氮烷）可以在所述开口内流动以填充开口。 在用SOD材料填充开口之后，可以将一种或多种掺杂剂物质注入到投影中，使晶体半导体材料在所述突起的上部非晶化。 然后可以在至少约400℃的温度下对SOD材料进行退火以形成隔离结构。 一些实施例包括半导体结构，其包括在一对开口之间具有突起的半导体材料基底。 突起可以在下部区域上方具有上部区域，其中上部区域为至少75％的无定形，并且下部区域是完全结晶的。

    Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells
    5.
    发明授权
    Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells 有权
    形成场效应晶体管，多个场效应晶体管和包括多个单独存储单元的DRAM电路的方法

    公开(公告)号：US08409946B2

    公开(公告)日：2013-04-02

    申请号：US13528028

    申请日：2012-06-20

    申请人： Paul Grisham ,  Gordon A. Haller ,  Sahn D. Tang

    发明人： Paul Grisham ,  Gordon A. Haller ,  Sahn D. Tang

    IPC分类号： H01L21/8236

    CPC分类号： H01L29/7851 ,  H01L21/76232 ,  H01L27/10823 ,  H01L27/10826 ,  H01L27/10876 ,  H01L27/10879 ,  H01L29/66818 ,  H01L29/7854

    摘要： A method of forming a field effect transistor includes forming trench isolation material within a semiconductor substrate and on opposing sides of a semiconductor material channel region along a length of the channel region. The trench isolation material is formed to comprise opposing insulative projections extending toward one another partially under the channel region along the channel length and with semiconductor material being received over the projections. The trench isolation material is etched to expose opposing sides of the semiconductor material along the channel length. The exposed opposing sides of the semiconductor material are etched along the channel length to form a channel fin projecting upwardly relative to the projections. A gate is formed over a top and opposing sides of the fin along the channel length. Other methods and structures are disclosed.

    摘要翻译： 形成场效应晶体管的方法包括在半导体衬底内形成沟槽隔离材料，并在沟道区的长度上在半导体材料沟道区的相对侧上形成沟道隔离材料。 沟槽隔离材料形成为包括沿着沟道长度部分地在沟道区域下方朝向彼此延伸的相对的绝缘突起，并且半导体材料被接收在突起上。 蚀刻沟槽隔离材料以沿着沟道长度露出半导体材料的相对侧。 半导体材料的暴露的相对侧沿通道长度被蚀刻以形成相对于突出部向上突出的通道翅片。 栅极沿着沟道长度形成在鳍的顶部和相对侧上。 公开了其它方法和结构。

    Memory structure for reduced floating body effect
    8.
    发明授权
    Memory structure for reduced floating body effect 有权
    用于减少浮体效应的记忆结构

    公开(公告)号：US07626223B2

    公开(公告)日：2009-12-01

    申请号：US11673922

    申请日：2007-02-12

    申请人： Gordon A. Haller

    发明人： Gordon A. Haller

    IPC分类号： H01L27/108

    CPC分类号： H01L27/0218 ,  H01L27/10823 ,  H01L27/10861 ,  H01L27/10876 ,  H01L27/10891

    摘要： Methods of reducing the floating body effect in vertical transistors are disclosed. The floating body effect occurs when an active region in a pillar is cut off from the substrate by a depletion region and the accompanying electrostatic potential created. In a preferred embodiment, a word line is recessed into the substrate to tie the upper active region to the substrate. The resulting memory cells are preferably used in dynamic random access memory (DRAM) devices.

    摘要翻译： 公开了降低垂直晶体管中的浮体效应的方法。 当通过耗尽区从衬底切断柱中的有源区域并产生伴随的静电势时，发生浮体效应。 在一个优选实施例中，字线凹陷到衬底中以将上部有源区域连接到衬底。 所得到的存储单元优选地用于动态随机存取存储器（DRAM）装置。

    Vertical transistors
    9.
    发明授权
    Vertical transistors 有权
    垂直晶体管

    公开(公告)号：US07521322B2

    公开(公告)日：2009-04-21

    申请号：US11491066

    申请日：2006-07-21

    申请人： Sanh Dang Tang ,  Gordon A. Haller

    发明人： Sanh Dang Tang ,  Gordon A. Haller

    IPC分类号： H01L29/72

    CPC分类号： H01L27/10885 ,  H01L21/28132 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/66666

    摘要： Vertical transistors for memory cells, such as 4F2 memory cells, are disclosed. The memory cells use digit line connections formed within the isolation trench to connect the digit line with the lower active area. Vertical transistor pillars can be formed from epitaxial silicon or etched from bulk silicon. Memory cells can be formed by creating a cell capacitor electrically connected to each transistor pillar.

    摘要翻译： 公开了用于存储器单元的垂直晶体管，例如4F2存储器单元。 存储单元使用形成在隔离沟槽内的数字线连接来将数字线连接到较低有效区域。 垂直晶体管柱可以由外延硅形成，也可以从体硅中蚀刻。 可以通过产生电连接到每个晶体管柱的单元电容器来形成存储单元。

    Acceleration of etch selectivity for self-aligned contact
    10.
    发明授权
    Acceleration of etch selectivity for self-aligned contact 失效
    加速自对准接触的蚀刻选择性

    公开(公告)号：US5804506A

    公开(公告)日：1998-09-08

    申请号：US516461

    申请日：1995-08-17

    申请人： Gordon A. Haller ,  Randhir P. S. Thakur ,  Kirk Prall

    发明人： Gordon A. Haller ,  Randhir P. S. Thakur ,  Kirk Prall

    IPC分类号： H01L21/311 ,  H01L21/60 ,  H01L21/461

    CPC分类号： H01L21/76897 ,  H01L21/31116

    摘要： A method of fabricating an integrated circuit on a semiconductor substrate is provided including the steps of forming a tungsten silicide conductor structure having a nitride encapsulating layer on the substrate and disposing a doped nonconducting layer over the conductor structure. A self-aligned contact etch is performed wherein the etch is a selective etch of the conductor structure and the nonconducting layer. The selective etch preferentially removes material forming the nonconducting layer rather than material forming the conductor structure. The semiconductor layer is preferably doped with germanium but may also be doped with phosphorous or other known dopants. A germanium concentration of 5% to 25% provides the preferred increased selectivity of the etch. The nonconducting layer can be formed of SG, BPSG, BSG, PSG and TEOS. Transistor regions are formed in the substrate in the vicinity of the tungsten silicide structure and electrical contacts are electrically coupled to the transistor regions by way of openings provided with the selective etch.

    摘要翻译： 提供一种在半导体衬底上制造集成电路的方法，包括以下步骤：在衬底上形成具有氮化物封装层的硅化钨导体结构，并在导体结构上设置掺杂的非导电层。 执行自对准接触蚀刻，其中蚀刻是导体结构和非导电层的选择性蚀刻。 选择性蚀刻优先去除形成不导电层的材料，而不是形成导体结构的材料。 半导体层优选掺杂锗，但也可掺杂磷或其它已知掺杂剂。 5％至25％的锗浓度提供优选的蚀刻选择性。 不导电层可以由SG，BPSG，BSG，PSG和TEOS形成。 晶体管区域形成在硅化钨结构附近的衬底中，并且电触点通过提供有选择性蚀刻的开口电耦合到晶体管区域。