公开(公告)号：US08580042B2

公开(公告)日：2013-11-12

申请号：US12734983

申请日：2007-12-10

申请人： Voha Nuch ,  David Wang ,  Yue Ma ,  Fufa Chen ,  Jian Wang ,  Yunwen Huang ,  Liangzhi Xie ,  Chuan He

发明人： Voha Nuch ,  David Wang ,  Yue Ma ,  Fufa Chen ,  Jian Wang ,  Yunwen Huang ,  Liangzhi Xie ,  Chuan He

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67051

摘要： An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

摘要翻译： 用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘，腔室，用于收集具有一个或多个排出口的清洁溶液的可旋转托盘，用于收集多个清洁溶液的多个受体，用于驱动的​​第一马达 卡盘和第二马达驱动托盘。 托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。 由托盘收集的清洁溶液可以被引导到指定的受体中。 该设备的一个特征是具有坚固且精确控制的清洁溶液循环，具有最小的交叉污染。

公开(公告)号：US20110114120A1

公开(公告)日：2011-05-19

申请号：US12734983

申请日：2007-12-10

申请人： Voha Nuch ,  David Wang ,  Yue Ma ,  Fufa Chen ,  Jian Wang ,  Yunwen Huang ,  Liangzhi Xie ,  Chuan He

发明人： Voha Nuch ,  David Wang ,  Yue Ma ,  Fufa Chen ,  Jian Wang ,  Yunwen Huang ,  Liangzhi Xie ,  Chuan He

IPC分类号： B08B3/00

CPC分类号： H01L21/67051

摘要： An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

摘要翻译： 用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘，腔室，用于收集具有一个或多个排出口的清洁溶液的可旋转托盘，用于收集多个清洁溶液的多个受体，用于驱动的​​第一马达 卡盘和第二马达驱动托盘。 托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。 由托盘收集的清洁溶液可以被引导到指定的受体中。 该设备的一个特征是具有坚固且精确控制的清洁溶液循环，具有最小的交叉污染。

公开(公告)号：US09492852B2

公开(公告)日：2016-11-15

申请号：US13262264

申请日：2009-03-31

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC分类号： B08B3/00 ,  B08B3/12 ,  H01L21/67

CPC分类号： H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针或逆时针转动半导体衬底或超/超声波装置，在清洁过程期间，为了卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US20120097195A1

公开(公告)日：2012-04-26

申请号：US13262264

申请日：2009-03-31

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Yue Ma ,  Hui Wang

IPC分类号： B08B3/00

CPC分类号： H01L21/02068 ,  B08B3/12 ,  H01L21/02063 ,  H01L21/67051

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or count clockwise.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，通过顺时针旋转半导体衬底或超/超声波装置，顺时针或顺时针方向计数，在清洁过程中，通过卡盘的每次旋转来改变半导体衬底和超/超声波装置之间的间隙。

公开(公告)号：US09595457B2

公开(公告)日：2017-03-14

申请号：US13133826

申请日：2008-12-12

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

IPC分类号： H01L21/67 ,  B08B3/12

CPC分类号： H01L21/67051 ,  B08B3/08 ,  B08B3/12 ,  B08B3/123 ,  H01L21/02063 ,  H01L21/67023 ,  H01L21/6708

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。 对于卡盘的每次旋转，间隙可以增加或减小0.5λ/ N，其中λ是超/兆声波的波长，N是2和1000之间的整数。间隙在0.5λn的范围内变化 在清洁过程中，其中λ是超/兆声波的波长，n是从1开始的整数。

公开(公告)号：US20110290277A1

公开(公告)日：2011-12-01

申请号：US13133826

申请日：2008-12-12

申请人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

发明人： Jian Wang ,  Sunny Voha Nuch ,  Liangzhi Xie ,  Junping Wu ,  Zhaowei Jia ,  Yunwen Huang ,  Zhifeng Gao ,  Hui Wang

IPC分类号： B08B3/12

CPC分类号： H01L21/67051 ,  B08B3/08 ,  B08B3/12 ,  B08B3/123 ,  H01L21/02063 ,  H01L21/67023 ,  H01L21/6708

摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

摘要翻译： 一种使用超声波超声波装置清洗半导体衬底的方法，包括通过使用卡盘保持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，并在半导体衬底和 超声波/超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。 对于卡盘的每次旋转，间隙可以增加或减小0.5λ/ N，其中λ是超/兆声波的波长，N是2和1000之间的整数。间隙在0.5λn的范围内变化 在清洁过程中，其中λ是超/兆声波的波长，n是从1开始的整数。

公开(公告)号：US08518224B2

公开(公告)日：2013-08-27

申请号：US12734438

申请日：2007-11-02

申请人： Yue Ma ,  Xi Wang ,  Yunwen Huang ,  Zhenxu Pang ,  Voha Nuch ,  David Wang

发明人： Yue Ma ,  Xi Wang ,  Yunwen Huang ,  Zhenxu Pang ,  Voha Nuch ,  David Wang

IPC分类号： C25D17/00 ,  C25D17/02 ,  C25D21/04 ,  C25D7/12

CPC分类号： C25D17/00 ,  C25D17/001 ,  C25D17/10 ,  C25D21/04

摘要： The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

摘要翻译： 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡，聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。

公开(公告)号：US20100307913A1

公开(公告)日：2010-12-09

申请号：US12734438

申请日：2007-11-02

申请人： Yue Ma ,  Xi Wang ,  Yunwen Huang ,  Zhenxu Pang ,  Voha Nuch ,  David Wang

发明人： Yue Ma ,  Xi Wang ,  Yunwen Huang ,  Zhenxu Pang ,  Voha Nuch ,  David Wang

IPC分类号： C25D17/00 ,  C25D17/02 ,  C25D17/10

CPC分类号： C25D17/00 ,  C25D17/001 ,  C25D17/10 ,  C25D21/04

摘要： The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

摘要翻译： 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡，聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。