Methods and apparatus for cleaning semiconductor wafers
    1.
    发明授权
    Methods and apparatus for cleaning semiconductor wafers 有权
    用于清洁半导体晶片的方法和设备

    公开(公告)号:US08580042B2

    公开(公告)日:2013-11-12

    申请号:US12734983

    申请日:2007-12-10

    IPC分类号: B08B3/00 B08B7/00

    CPC分类号: H01L21/67051

    摘要: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

    摘要翻译: 用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘,腔室,用于收集具有一个或多个排出口的清洁溶液的可旋转托盘,用于收集多个清洁溶液的多个受体,用于驱动的​​第一马达 卡盘和第二马达驱动托盘。 托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。 由托盘收集的清洁溶液可以被引导到指定的受体中。 该设备的一个特征是具有坚固且精确控制的清洁溶液循环,具有最小的交叉污染。

    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS
    2.
    发明申请
    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 有权
    清洗半导体波形的方法和装置

    公开(公告)号:US20110114120A1

    公开(公告)日:2011-05-19

    申请号:US12734983

    申请日:2007-12-10

    IPC分类号: B08B3/00

    CPC分类号: H01L21/67051

    摘要: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

    摘要翻译: 用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘,腔室,用于收集具有一个或多个排出口的清洁溶液的可旋转托盘,用于收集多个清洁溶液的多个受体,用于驱动的​​第一马达 卡盘和第二马达驱动托盘。 托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。 由托盘收集的清洁溶液可以被引导到指定的受体中。 该设备的一个特征是具有坚固且精确控制的清洁溶液循环,具有最小的交叉污染。

    Plating apparatus for metallization on semiconductor workpiece
    3.
    发明授权
    Plating apparatus for metallization on semiconductor workpiece 有权
    用于在半导体工件上进行金属化的电镀装置

    公开(公告)号:US08518224B2

    公开(公告)日:2013-08-27

    申请号:US12734438

    申请日:2007-11-02

    摘要: The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

    摘要翻译: 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡,聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。

    PLATING APPARATUS FOR METALLIZATION ON SEMICONDUCTOR WORKPIECE
    4.
    发明申请
    PLATING APPARATUS FOR METALLIZATION ON SEMICONDUCTOR WORKPIECE 有权
    用于金属化半导体工件的镀层设备

    公开(公告)号:US20100307913A1

    公开(公告)日:2010-12-09

    申请号:US12734438

    申请日:2007-11-02

    IPC分类号: C25D17/00 C25D17/02 C25D17/10

    摘要: The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

    摘要翻译: 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡,聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。

    Method and apparatus for thermal treatment of semiconductor workpieces
    5.
    发明授权
    Method and apparatus for thermal treatment of semiconductor workpieces 有权
    半导体工件热处理方法和装置

    公开(公告)号:US08383429B2

    公开(公告)日:2013-02-26

    申请号:US12733436

    申请日:2007-08-29

    IPC分类号: H01L21/00

    摘要: The present invention provides an apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpiece.

    摘要翻译: 本发明提供了一种用于在两个紧密布置的热处理室中快速均匀地热处理半导体工件的装置和方法,其间具有可伸缩门。 可伸缩门在加热或冷却过程中在两个热处理室之间移动,并且为半导体工件的双面热处理提供附加的加热和冷却源。

    SOLUTION PREPARATION APPARATUS AND METHOD FOR TREATING INDIVIDUAL SEMICONDUCTOR WORKPIECE
    6.
    发明申请
    SOLUTION PREPARATION APPARATUS AND METHOD FOR TREATING INDIVIDUAL SEMICONDUCTOR WORKPIECE 审中-公开
    解决方案制备设备和处理个人半导体工件的方法

    公开(公告)号:US20110079247A1

    公开(公告)日:2011-04-07

    申请号:US12736178

    申请日:2008-03-17

    IPC分类号: B08B3/00

    摘要: The invention discloses a low-cost apparatus for chemical solution preparation with controlled process parameters such as chemical age, temperature, yield of active ingredients at the point of use. In addition, this apparatus provides chamber-to-chamber consistency on these parameters across multiple processing chambers on a single wafer wet-clean system. The invention also discloses a method to use chemical solution mixture resident time to achieve optimal combined effect of temperature, reactivity and yield of active ingredients of chemical solution mixture for best wafer treatment results.

    摘要翻译: 本发明公开了一种用于化学溶液制备的低成本装置,其具有受控的工艺参数,例如化学年龄,温度,使用时活性成分的产率。 此外,该装置在单个晶片湿清洁系统上的多个处理室上提供这些参数的腔室与室之间的一致性。 本发明还公开了一种使用化学溶液混合物驻留时间来实现化学溶液混合物的活性成分的温度,反应性和产率的最佳组合效果的方法,以获得最佳的晶片处理结果。

    ELECTROCHEMICAL DEPOSITION SYSTEM
    7.
    发明申请
    ELECTROCHEMICAL DEPOSITION SYSTEM 审中-公开
    电化学沉积系统

    公开(公告)号:US20110073469A1

    公开(公告)日:2011-03-31

    申请号:US12736176

    申请日:2008-03-19

    IPC分类号: C25D17/00

    摘要: A electrochemical deposition system which has a 3-D stacked architecture comprises a factory interface for receiving semiconductor wafers, a mainframe comprising a mainframe transfer robot and a plurality of wafer holder assemblies which disposed on the top thereof, a plurality of electroplating cells disposed within the mainframe, a plurality of cleaning cells disposed within the mainframe and located below the electroplating cells, a plurality of thermal treatment chambers disposed in between the mainframe and the factory interface, and a fluid distribution system fluidly connected to the electroplating cells and the cleaning cells, wherein the mainframe transfer robot transfers the semiconductor wafer from the factory interface and within the electroplating cells, the cleaning cells, and the thermal treatment chambers. As a result, the system of the present invention is expandable to accommodate newly-added processing units without overmuch increased footprint.

    摘要翻译: 具有3-D堆叠结构的电化学沉积系统包括用于接收半导体晶片的工厂接口,包括主机传送机器人的主机和设置在其顶部的多个晶片保持器组件,多个电镀单元 主机,设置在主机内并位于电镀单元下方的多个清洁单元,设置在主机和工厂界面之间的多个热处理室,以及流体连接到电镀单元和清洁单元的流体分配系统, 其中所述主机传送机器人从所述工厂接口和所述电镀单元,所述清洁单元和所述热处理室中传送所述半导体晶片。 结果,本发明的系统可扩展以容纳新增的处理单元,而不会增加占用空间。

    METHOD AND APPARATUS FOR THERMAL TREATMENT OF SEMICONDUCTOR WORKPIECES
    8.
    发明申请
    METHOD AND APPARATUS FOR THERMAL TREATMENT OF SEMICONDUCTOR WORKPIECES 有权
    半导体工件热处理方法和装置

    公开(公告)号:US20100240226A1

    公开(公告)日:2010-09-23

    申请号:US12733436

    申请日:2007-08-29

    IPC分类号: H01L21/26 F28C3/00

    摘要: The present invention provides an apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpiece.

    摘要翻译: 本发明提供了一种用于在两个紧密布置的热处理室中快速均匀地热处理半导体工件的装置和方法,其间具有可伸缩门。 可伸缩门在加热或冷却过程中在两个热处理室之间移动,并且为半导体工件的双面热处理提供附加的加热和冷却源。

    Measuring alignment between a wafer chuck and polishing/plating receptacle
    9.
    发明申请
    Measuring alignment between a wafer chuck and polishing/plating receptacle 审中-公开
    测量晶片卡盘和抛光/电镀插座之间的对准

    公开(公告)号:US20070039827A1

    公开(公告)日:2007-02-22

    申请号:US10538402

    申请日:2003-12-09

    申请人: Hui Wang Voha Nuch

    发明人: Hui Wang Voha Nuch

    IPC分类号: B23H3/00

    摘要: An apparatus for electropolishing and/or electroplating metal layers on a semiconductor wafer includes a receptacle having a plurality of section walls. The apparatus includes a wafer chuck configured to hold the semiconductor wafer and to position the semiconductor wafer within the receptacle with a surface of the semiconductor wafer adjacent to top portions of the plurality of section walls. The apparatus also includes a first plurality of sensors configured to measure alignment between the center of one of the plurality of section walls to the center of the wafer chuck, and thus the center of the semiconductor wafer.

    摘要翻译: 用于在半导体晶片上电解抛光和/或电镀金属层的装置包括具有多个部分壁的插座。 该装置包括晶片卡盘,其被配置为保持半导体晶片并且将半导体晶片定位在插座内,其中半导体晶片的表面与多个部分壁的顶部部分相邻。 该装置还包括第一多个传感器,其被配置为测量多个部分壁中的一个的中心与晶片卡盘的中心之间的对准,并且因此测量半导体晶片的中心。