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    Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
    5.
    发明授权
    Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation 有权
    使用替代氟化硼前体的硼离子注入，以及用于植入的大的硼氢化物的形成

    公开(公告)号：US08389068B2

    公开(公告)日：2013-03-05

    申请号：US12913757

    申请日：2010-10-27

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： C23C14/48 ,  C23C14/06 ,  H01L21/04 ,  H01L21/425 ,  C23C14/16

    CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

    摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    摘要翻译： 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

    Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
    6.
    发明授权
    Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation 有权
    使用替代氟化硼前体的硼离子注入，以及用于植入的大的硼氢化物的形成

    公开(公告)号：US07943204B2

    公开(公告)日：2011-05-17

    申请号：US12065503

    申请日：2006-08-30

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： C23C14/48 ,  H01L21/425 ,  C23C16/48

    CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

    摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    摘要翻译： 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION
    7.
    发明申请
    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION 有权
    使用替代性氟化硼前体的硼离子植入和形成用于植入的大量硼氢化合物

    公开(公告)号：US20110065268A1

    公开(公告)日：2011-03-17

    申请号：US12913757

    申请日：2010-10-27

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： H01L21/265

    CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

    摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    摘要翻译： 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

    Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source
    8.
    发明申请
    Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source 审中-公开
    将低压掺杂气体输送到高电压离子源

    公开(公告)号：US20080220596A1

    公开(公告)日：2008-09-11

    申请号：US12065471

    申请日：2006-08-29

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： H01L21/265 ,  H01J37/317 ,  H01J37/08

    CPC分类号： H01J37/08 ,  H01J27/02 ,  H01J37/3172 ,  H01J2237/0203

    摘要： A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.

    摘要翻译： 一种用于在半导体衬底的掺杂中向高电压离子源传送低压掺杂气体的系统，其中在进入高压离子源之前，气体的不期望的电离被抑制，通过调制 高电压离子源，使得电子加速效应降低到低于支持电子离子化级联的水平。 具体应用中的气体输送系统包括气体流动通道，与气体流动通道的至少一部分电耦合以在其上施加电场的电压发生器，以及阻塞结构，其被展开以调制电子的加速度长度 相对于气体的电离电位的低压气体，抑制气体流路中的电离。

    System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
    9.
    发明授权
    System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers 失效
    用于原位生成用于清洗半导体处理室的氟自由基和/或含氟卤代（XFn）化合物的系统

    公开(公告)号：US06841141B2

    公开(公告)日：2005-01-11

    申请号：US10065219

    申请日：2002-09-26

    申请人： Jose I. Arno ,  W. Karl Olander

    发明人： Jose I. Arno ,  W. Karl Olander

    IPC分类号： B08B7/00 ,  C23C16/44 ,  C01B7/00 ,  A61L2/00 ,  C01D3/02

    CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405

    摘要： A system for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen compounds XFn (wherein X is Cl, Br, or I, and n is an odd integer). Such system comprises a fluorine source, a halogen source for supplying halogen species other than fluorine, a chamber for mixing fluorine with halogen species other than fluorine, and an energy source to supply energy to such chamber to facilitate reaction between fluorine and the halogen species other than fluorine. The chamber may be a semiconductor processing chamber, wherein the in situ generated fluorine radicals and/or fluorine-containing interhalogens are employed for cleaning the processing chamber.

    摘要翻译： 用于原位产生氟自由基和/或含氟卤代化合物XFn（其中X为Cl，Br或I，n为奇整数）的系统。 这种系统包括氟源，用于提供除氟之外的卤素物质的卤素源，用于将氟与氟以外的卤素物质混合的室，以及向该室供应能量以促进氟与卤素物质之间的反应的能量源 比氟。 腔室可以是半导体处理腔室，其中原位产生的氟自由基和/或含氟中间卤素用于清洁处理室。