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公开(公告)号:US20090087585A1
公开(公告)日:2009-04-02
申请号:US11864100
申请日:2007-09-28
申请人: WEI TI LEE , Yen-Chih Wang , Mohd Fadzli Anwar Hassan , Ryeun Kwan Kim , Hyung Chul Park , Ted Guo , Alan A. Ritchie
发明人: WEI TI LEE , Yen-Chih Wang , Mohd Fadzli Anwar Hassan , Ryeun Kwan Kim , Hyung Chul Park , Ted Guo , Alan A. Ritchie
IPC分类号: H05H1/24
CPC分类号: H01J37/34 , C23C14/0036 , C23C14/0089 , C23C14/0641 , H01J37/32449 , H01J37/32706 , H01L21/2855 , H01L21/28556 , H01L21/32051 , H01L21/76831 , H01L21/76843 , H01L21/76876 , H01L21/76879 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要: Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.
摘要翻译: 本文所述的实施例提供了一种通过不同PVD工艺形成两种氮化钛材料的方法,使得最初通过金属模式的PVD工艺形成金属氮化钛层,并且在金属钛的一部分上形成氮化钛延迟层 氮化物层通过PVD工艺处于毒液模式。 随后,通过CVD工艺可以在金属氮化钛层的暴露部分上选择性地沉积第一铝层,例如铝籽晶层。 此后,在铝PVD工艺期间,可以在第一铝层和氮化钛延迟层的暴露部分上沉积第二铝层,例如铝本体层。
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公开(公告)号:US07824743B2
公开(公告)日:2010-11-02
申请号:US11864100
申请日:2007-09-28
申请人: Wei Ti Lee , Yen-Chih Wang , Mohd Fadzli Anwar Hassan , Ryeun Kwan Kim , Hyung Chul Park , Ted Guo , Alan A. Ritchie
发明人: Wei Ti Lee , Yen-Chih Wang , Mohd Fadzli Anwar Hassan , Ryeun Kwan Kim , Hyung Chul Park , Ted Guo , Alan A. Ritchie
IPC分类号: B05D5/12 , H01L21/04 , H01L21/203 , H05H1/24
CPC分类号: H01J37/34 , C23C14/0036 , C23C14/0089 , C23C14/0641 , H01J37/32449 , H01J37/32706 , H01L21/2855 , H01L21/28556 , H01L21/32051 , H01L21/76831 , H01L21/76843 , H01L21/76876 , H01L21/76879 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要: Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.
摘要翻译: 本文所述的实施例提供了通过不同PVD工艺形成两种氮化钛材料的方法,使得最初通过金属模式的PVD工艺形成金属氮化钛层,并且在金属钛的一部分上形成氮化钛延迟层 氮化物层通过PVD工艺处于毒液模式。 随后,通过CVD工艺可以在金属氮化钛层的暴露部分上选择性地沉积第一铝层,例如铝籽晶层。 此后,在铝PVD工艺期间,可以在第一铝层和氮化钛延迟层的暴露部分上沉积第二铝层,例如铝本体层。
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