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    Aluminum contact integration on cobalt silicide junction
    3.
    发明授权
    Aluminum contact integration on cobalt silicide junction 失效
    硅化钴接头上的铝接触集成

    公开(公告)号：US07867900B2

    公开(公告)日：2011-01-11

    申请号：US12240816

    申请日：2008-09-29

    申请人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    发明人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

    摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

    ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION
    4.
    发明申请
    ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION 失效
    铝接点集成在钴硅酮结上

    公开(公告)号：US20090087983A1

    公开(公告)日：2009-04-02

    申请号：US12240816

    申请日：2008-09-29

    申请人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    发明人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

    摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

    METHOD OF FORMING ATO WITH HIGH THROUGHPUT AND ELLIPSOMETRY DIAGNOSTIC METHOD FOR THE TCO PROCESS
    8.
    发明申请
    METHOD OF FORMING ATO WITH HIGH THROUGHPUT AND ELLIPSOMETRY DIAGNOSTIC METHOD FOR THE TCO PROCESS 审中-公开
    用于TCO过程的具有高通量和ELLIPSOMETRY诊断方法的方法

    公开(公告)号：US20130136851A1

    公开(公告)日：2013-05-30

    申请号：US13307341

    申请日：2011-11-30

    申请人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhin-Wen Sun

    发明人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhin-Wen Sun

    IPC分类号： C23C14/54 ,  C23C14/34 ,  C23C14/08

    CPC分类号： C23C14/08 ,  C23C14/0042 ,  C23C14/3464 ,  C23C14/545 ,  C23C14/5806 ,  C23C14/5853

    摘要： A method for producing antimony doped tin oxide (ATO) films is discussed wherein the films are deposited by reactive sputtering using a non-poisoned mode and then annealed in an air ambient to fully oxidize the films and improve the resistivity and transmission characteristics, and the non-poisoned mode method could improve the throughput. A method using spectroscopic ellipsometry and an independent measurement of an additional optical or physical property is disclosed which results in a significantly improved prediction of the various optical and physical properties of the film, such that the method made the spectroscopic ellipsometry valuable for monitoring and controlling the process in real time, and valuable for determining the carrier density, mobility and their gradients within the film.

    摘要翻译： 讨论了制造锑掺杂氧化锡（ATO）膜的方法，其中通过使用非中毒模式的反应溅射沉积膜，然后在空气环境中退火以完全氧化膜并提高电阻率和传输特性， 非中毒模式方法可以提高吞吐量。 公开了一种使用光谱椭偏仪和附加光学或物理性质的独立测量的方法，其导致对膜的各种光学和物理性质的显着改进的预测，使得该方法使得光谱椭圆偏振值对于监测和控制 过程，并且对于确定电影中的载流子密度，迁移率及其梯度是有价值的。

    Physical Vapor Deposition Tool with Gas Separation
    9.
    发明申请
    Physical Vapor Deposition Tool with Gas Separation 审中-公开
    具有气体分离的物理气相沉积工具

    公开(公告)号：US20120168304A1

    公开(公告)日：2012-07-05

    申请号：US12982397

    申请日：2010-12-30

    申请人： Hien Minh Huu Le ,  Mohd Fadzli Anwar Hassan

    发明人： Hien Minh Huu Le ,  Mohd Fadzli Anwar Hassan

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3464 ,  C23C14/0036

    摘要： Embodiments of the current invention describe a physical vapor deposition tool. The physical vapor deposition tool includes a housing, a substrate support positioned within the housing and configured to support a substrate, a first process head positioned over the substrate support and having a first target, a second process head positioned over the substrate support and having a second target, and a gas line to provide gas to the first process head. The first process head and the gas line are configured such that the gas provided to the first process head through the gas line interacts with ions ejected from the first target and does not interact with ions ejected from the second target.

    摘要翻译： 本发明的实施例描述了一种物理气相沉积工具。 物理气相沉积工具包括壳体，位于壳体内并被配置为支撑衬底的衬底支撑件，位于衬底支撑件上并具有第一靶的第一工艺头，位于衬底支撑件上方的第二工艺头， 第二目标和用于向第一处理头提供气体的气体管线。 第一处理头和气体管线被配置为使得通过气体管线提供给第一处理头的气体与从第一靶标喷出的离子相互作用，并且不与从第二靶材排出的离子相互作用。

    Heat stable SnAl and SnMg based dielectrics
    10.
    发明授权
    Heat stable SnAl and SnMg based dielectrics 有权
    耐热SnAl和SnMg基电介质

    公开(公告)号：US08784934B2

    公开(公告)日：2014-07-22

    申请号：US13305550

    申请日：2011-11-28

    申请人： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

    发明人： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

    IPC分类号： B05D5/06

    CPC分类号： C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

    摘要： A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

    摘要翻译： 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。