公开(公告)号：US20090087585A1

公开(公告)日：2009-04-02

申请号：US11864100

申请日：2007-09-28

申请人： WEI TI LEE ,  Yen-Chih Wang ,  Mohd Fadzli Anwar Hassan ,  Ryeun Kwan Kim ,  Hyung Chul Park ,  Ted Guo ,  Alan A. Ritchie

发明人： WEI TI LEE ,  Yen-Chih Wang ,  Mohd Fadzli Anwar Hassan ,  Ryeun Kwan Kim ,  Hyung Chul Park ,  Ted Guo ,  Alan A. Ritchie

IPC分类号： H05H1/24

CPC分类号： H01J37/34 ,  C23C14/0036 ,  C23C14/0089 ,  C23C14/0641 ,  H01J37/32449 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.

摘要翻译： 本文所述的实施例提供了一种通过不同PVD工艺形成两种氮化钛材料的方法，使得最初通过金属模式的PVD工艺形成金属氮化钛层，并且在金属钛的一部分上形成氮化钛延迟层 氮化物层通过PVD工艺处于毒液模式。 随后，通过CVD工艺可以在金属氮化钛层的暴露部分上选择性地沉积第一铝层，例如铝籽晶层。 此后，在铝PVD工艺期间，可以在第一铝层和氮化钛延迟层的暴露部分上沉积第二铝层，例如铝本体层。

公开(公告)号：US07824743B2

公开(公告)日：2010-11-02

申请号：US11864100

申请日：2007-09-28

申请人： Wei Ti Lee ,  Yen-Chih Wang ,  Mohd Fadzli Anwar Hassan ,  Ryeun Kwan Kim ,  Hyung Chul Park ,  Ted Guo ,  Alan A. Ritchie

发明人： Wei Ti Lee ,  Yen-Chih Wang ,  Mohd Fadzli Anwar Hassan ,  Ryeun Kwan Kim ,  Hyung Chul Park ,  Ted Guo ,  Alan A. Ritchie

IPC分类号： B05D5/12 ,  H01L21/04 ,  H01L21/203 ,  H05H1/24

CPC分类号： H01J37/34 ,  C23C14/0036 ,  C23C14/0089 ,  C23C14/0641 ,  H01J37/32449 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.

摘要翻译： 本文所述的实施例提供了通过不同PVD工艺形成两种氮化钛材料的方法，使得最初通过金属模式的PVD工艺形成金属氮化钛层，并且在金属钛的一部分上形成氮化钛延迟层 氮化物层通过PVD工艺处于毒液模式。 随后，通过CVD工艺可以在金属氮化钛层的暴露部分上选择性地沉积第一铝层，例如铝籽晶层。 此后，在铝PVD工艺期间，可以在第一铝层和氮化钛延迟层的暴露部分上沉积第二铝层，例如铝本体层。

公开(公告)号：US07857947B2

公开(公告)日：2010-12-28

申请号：US11459531

申请日：2006-07-24

申请人： Alan A. Ritchie ,  Wei Ti Lee ,  Ted Guo

发明人： Alan A. Ritchie ,  Wei Ti Lee ,  Ted Guo

IPC分类号： C23C14/34 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C23C14/165 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45591 ,  Y10T29/497 ,  Y10T29/49826 ,  Y10T137/0491 ,  Y10T137/9029

摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

摘要翻译： 提供化学气相沉积室的阻挡板和处理阻挡板的方法。 阻挡板限定穿过其中的多个孔，并且具有至少约99.5％纯度的上表面和下表面，其最大限度地减小阻挡板上的污染颗粒的成核。 可以在阻挡板的上表面和下表面上形成物理气相沉积涂层，例如铝物理气相沉积涂层。 还提供了包括其上具有物理气相沉积涂层的阻挡板的化学气相沉积室。

公开(公告)号：US08535443B2

公开(公告)日：2013-09-17

申请号：US11459575

申请日：2006-07-24

申请人： Wei Ti Lee ,  Ted Guo ,  Steve H. Chiao ,  Alan A. Ritchie

发明人： Wei Ti Lee ,  Ted Guo ,  Steve H. Chiao ,  Alan A. Ritchie

IPC分类号： C23C16/00

CPC分类号： C23C16/45561 ,  C23C14/165 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45591 ,  Y10T29/497 ,  Y10T29/49826 ,  Y10T137/0491 ,  Y10T137/9029

摘要： A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.

摘要翻译： 提供了一种用于处理室的气体管线系统和形成用于处理室的气体管线系统的方法。 气体管线系统包括连接电抛光线性气体管线的电抛光多通阀。 通过使用多通阀而不是三通阀，并对线性气体管线进行电解抛光，可以减少气体管线系统中污染颗粒的成核。

公开(公告)号：US09087679B2

公开(公告)日：2015-07-21

申请号：US13365876

申请日：2012-02-03

申请人： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

发明人： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01J37/32

CPC分类号： H01J37/34 ,  H01J37/32082 ,  H01J37/3441

摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的

公开(公告)号：US07389645B2

公开(公告)日：2008-06-24

申请号：US11267058

申请日：2005-11-04

申请人： Alan A. Ritchie

发明人： Alan A. Ritchie

IPC分类号： B01D8/00

CPC分类号： F04B37/08 ,  C23C14/564

摘要： A method and apparatus to shield a cryogenic pump in a physical vapor deposition chamber comprising a physical vapor deposition chamber, a gasket in thermal contact with the physical vapor deposition chamber, at least one post in contact with the gasket, a radiation shield connected at the top of the post, and at least one intermediate ring in contact with the post. A method and apparatus for a radiation shield for a cryogenic pump comprising a cryogenic pump with a region upstream from the cryogenic pump, a gasket in thermal contact the region upstream from the cryogenic pump, at least one post in contact with the gasket, a radiation shield connected at the top of the post, and at least one intermediate ring in contact with the post.

摘要翻译： 一种在物理气相沉积室中屏蔽低温泵的方法和装置，包括物理气相沉积室，与物理气相沉积室热接触的衬垫，与衬垫接触的至少一个柱， 该职位的顶部，以及至少一个与岗位接触的中间环。 一种用于低温泵的辐射屏蔽的方法和装置，包括：低温泵，其具有来自低温泵上游的区域，与低温泵上游区域热接触的垫圈，至少一个与垫圈接触的柱，辐射 屏蔽件连接在柱的顶部，以及至少一个与柱接触的中间环。

公开(公告)号：US20120211354A1

公开(公告)日：2012-08-23

申请号：US13365876

申请日：2012-02-03

申请人： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

发明人： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

IPC分类号： H01L21/203 ,  C23C14/06 ,  C23C14/35 ,  H01L21/28 ,  H01L21/31

CPC分类号： H01J37/34 ,  H01J37/32082 ,  H01J37/3441

摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的