公开(公告)号：US06589329B1

公开(公告)日：2003-07-08

申请号：US09522102

申请日：2000-03-09

申请人： Thomas H. Baum ,  Chongying Xu

发明人： Thomas H. Baum ,  Chongying Xu

IPC分类号： C23C1616

CPC分类号： C23C16/18 ,  C07F1/08 ,  C07F7/0803

摘要： Compositions useful for chemical vapor delivery (CVD) formation of copper layers in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head or for circuitization of packaging components. The copper precursor formulation may include one or more copper precursors, e.g., a precursor of the formula hfac(Cu)L where L is a low-cost ligand such as an alkene and/or alkyne such as [(hfac)Cu]2 (DMDVS). The formulation may include in addition to the copper precursor(s) one or more low-cost ligand species such as alkenes, alkynes, dienes and combinations thereof, to increase thermal stability of the formulation and provide enhanced vaporization properties for CVD.

摘要翻译： 可用于半导体集成电路中铜层的化学气相传输（CVD）形成的组合物，例如半导体器件结构中的互连金属化，用于电镀的粘合种子层，用于沉积薄膜记录头或用于封装的电路化 组件。 铜前体制剂可以包括一种或多种铜前体，例如式hfac（Cu）L的前体，其中L是低成本配体如烯烃和/或炔烃，例如[（hfac）Cu] 2（ DMDVS）。 除了铜前体之外，配方可以包括一种或多种低成本配体物质，例如烯烃，炔，二烯及其组合，以增加制剂的热稳定性并提供CVD的增强的气化性质。

公开(公告)号：US06491978B1

公开(公告)日：2002-12-10

申请号：US09612854

申请日：2000-07-10

申请人： Jagadish Kalyanam

发明人： Jagadish Kalyanam

IPC分类号： C23C1616

CPC分类号： H01L21/76843 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/67069 ,  H01L21/76856 ,  H01L21/76862

摘要： A method and apparatus for depositing a metal and/or metal nitride layer on a substrate by the thermal or plasma enhanced disassociation of an organometallic precursor having the formula of (Cp(R)n)xM(CO)y−x, in the presence of a processing gas, such as argon, hydrogen, or ammonia. In one embodiment the metal or metal nitride film is deposited at a pressure of less than about 20 Torr. The deposited metal or metal nitride layer may then be exposed to a plasma to remove contaminants, densify the layer, and reduce layer resistivity. The layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

摘要翻译： 一种通过在具有式（Cp（R）n）xM（CO）yx的有机金属前体的热或等离子体增强的分离作用下在金属和/或金属氮化物层上沉积金属和/或金属氮化物层的方法和装置， 处理气体，如氩气，氢气或氨气。 在一个实施例中，在小于约20托的压力下沉积金属或金属氮化物膜。 然后可以将沉积的金属或金属氮化物层暴露于等离子体以除去污染物，使层致密，并降低层电阻率。 该层可用作在集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

公开(公告)号：US06585821B1

公开(公告)日：2003-07-01

申请号：US10345636

申请日：2003-01-15

申请人： Wei-Wei Zhuang ,  Fengyan Zhang ,  Jer-shen Maa ,  Sheng Teng Hsu

发明人： Wei-Wei Zhuang ,  Fengyan Zhang ,  Jer-shen Maa ,  Sheng Teng Hsu

IPC分类号： C23C1616

CPC分类号： H01L21/02197 ,  C01G21/00 ,  C01P2002/86 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/31604 ,  H01L21/31691

摘要： A method of monitoring the synthesis of a PGO spin-coating precursor solution includes monitoring heating of the solution with a UV spectrometer and terminating the heating step when a solution property reaches a predetermined value. The method utilizes the starting materials of lead acetate trihydrate (Pb(OAc)2.3H2O) and germanium alkoxide (Ge(OR)4 (R=C2H5 and CH(CH3)2)). The organic solvent is di(ethylene glycol)ethyl ether. The mixed solution of lead and di(ethylene glycol)ethyl ether is heated in an atmosphere of air at a temperature no greater than 190° C., and preferably no greater than 185° C. for a time period in a range of approximately eighty-five minutes. During the heating step the solution properties are monitored to determine when the reaction is complete and when decomposition of the desired product begins to take place. The solution is then added to germanium di(ethylene glycol)ethyl ether to make the PGO spin-coating solution. This second step also entails heating the solution to a temperature no greater than 190° C. for a time period in a range of 0.5 to 2.0 hours. This heating step is also monitored with a UV spectrometer to determine when the heating step should be terminated. The process results in a PGO precursor solution suitable for use in spin-coating.

摘要翻译： 监测PGO旋涂前体溶液合成的方法包括用UV光谱仪监测溶液的加热，并且当溶液性能达到预定值时终止加热步骤。 该方法采用醋酸铅三水合物（Pb（OAc）2.3H2O）和烷氧基锗（Ge（OR）4（R = C2H5和CH（CH3）2））的原料。 有机溶剂是二（乙二醇）乙醚。 将铅和二（乙二醇）乙醚的混合溶液在不大于190℃，优选不大于185℃的空气气氛中加热约80℃的时间 -5分钟。 在加热步骤期间，监测溶液性质以确定反应何时完成，并且当所需产物的分解开始发生时。 然后将该溶液加入到二（乙二醇）二乙醚中以制备PGO旋涂溶液。 该第二步骤还需要将溶液加热至不高于190℃的温度，持续0.5至2.0小时的时间。 该加热步骤也用UV光谱仪监测，以确定加热步骤何时终止。 该方法产生适合用于旋涂的PGO前体溶液。

公开(公告)号：US06541067B1

公开(公告)日：2003-04-01

申请号：US09506962

申请日：2000-02-18

申请人： Eugene P. Marsh ,  Stefan Uhlenbrock

发明人： Eugene P. Marsh ,  Stefan Uhlenbrock

IPC分类号： C23C1616

CPC分类号： C23C16/18 ,  C23C16/40 ,  H01L21/28556 ,  H01L28/60 ,  Y10S427/101

摘要： A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

摘要翻译： 提供了一种通过采用化学气相沉积技术分解钌前体制剂来将氧化钌或氧化钌的膜形成到衬底的表面的方法。 本发明的钌前体制剂包括钌前体化合物和能够溶解钌前体化合物的溶剂。 还提供了一种用于制备用于将钌和钌的​​材料化学气相沉积到基底上的蒸发的钌前体的方法，其中具有含钌前体化合物的钌前体制剂和能够使含钌 前体化合物蒸发。

公开(公告)号：US06281125B1

公开(公告)日：2001-08-28

申请号：US09573034

申请日：2000-05-17

申请人： Brian A. Vaartstra ,  Eugene P. Marsh

发明人： Brian A. Vaartstra ,  Eugene P. Marsh

IPC分类号： C23C1616

CPC分类号： H01L28/60 ,  C23C16/40 ,  H01L21/28556

摘要： The present invention provides methods for the preparation of ruthenium oxide films from liquid ruthenium complexes of the formula (diene)Ru(CO)3 wherein “diene” refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, combinations thereof, or derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or O.

摘要翻译： 本发明提供了由式（二烯）Ru（CO）3的液态钌络合物制备氧化钌膜的方法，其中“二烯”是指直链，支链或环状二烯，双环二烯，三环二烯，其氟化衍生物 ，其组合，或另外含有卤素，Si，S，Se，P，As，N或O的杂原子的衍生物。

公开(公告)号：US06517616B2

公开(公告)日：2003-02-11

申请号：US10012668

申请日：2001-10-30

申请人： Eugene P. Marsh ,  Stefan Uhlenbrock

发明人： Eugene P. Marsh ,  Stefan Uhlenbrock

IPC分类号： C23C1616

CPC分类号： H01L28/60 ,  C23C16/18 ,  C23C16/40 ,  H01L21/28556

摘要： A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

公开(公告)号：US06444263B1

公开(公告)日：2002-09-03

申请号：US09663209

申请日：2000-09-15

申请人： Ajit P. Paranjpe ,  Randhir S. Bubber ,  Sanjay Gopinath ,  Thomas R. Omstead ,  Mehrdad M. Moslehi

发明人： Ajit P. Paranjpe ,  Randhir S. Bubber ,  Sanjay Gopinath ,  Thomas R. Omstead ,  Mehrdad M. Moslehi

IPC分类号： C23C1616

CPC分类号： C23C16/16 ,  C23C16/0281

摘要： A method for chemical-vapor deposition of a material film adds precursor decomposition by-product to the precursor flow to suppress premature gas-phase precursor decomposition and improve process repeatability and film quality. In one embodiment, CVD cobalt films are deposited with carbonyl precursors with reduced premature gas-phase reaction and particulate generation by the addition of excess carbon monoxide to the process chamber comprising the precursor flow. The addition of carbon monoxide not only suppresses gas-phase reaction but also improves cobalt film purity. The addition of excess carbon monoxide to CVD cobalt precursor flow provides repeatable deposition of glue and nucleation layers to support CVD copper, and is extendable to the deposition of high purity CVD cobalt for other applications and with other precursors, and also extendable for CVD CoSi2 films and other cobalt-containing applications.

摘要翻译： 材料膜的化学气相沉积方法将前体分解副产物添加到前体流中以抑制过早气相前体分解，并提高工艺重复性和膜质量。 在一个实施方案中，通过在包含前体流的处理室中加入过量的一氧化碳，将CVD钴膜沉积在羰基前体中，同时减少过早的气相反应和颗粒产生。 加入一氧化碳不仅抑制了气相反应，而且还提高了钴膜的纯度。 过量的一氧化碳添加到CVD钴前体流中提供了可重复沉积的胶和成核层以支持CVD铜，并且可扩展到用于其它应用和其它前体的高纯度CVD钴的沉积，并且还可用于CVD CoSi 2膜 和其他含钴应用。

公开(公告)号：US06228426B1

公开(公告)日：2001-05-08

申请号：US09343187

申请日：1999-06-30

申请人： Kew Ho Lee ,  Chang-Soo Jun

发明人： Kew Ho Lee ,  Chang-Soo Jun

IPC分类号： C23C1616

CPC分类号： B01D67/0041 ,  B01D67/0044 ,  B01D71/022 ,  B01D2323/12 ,  B01J35/065 ,  B01J37/0203 ,  B01J37/086 ,  C01B3/505 ,  C23C18/00

摘要： A process for manufacturing a composite inorganic membrane, comprising depositing one or a mixture of organometallic compounds according to formula (1): M[allyl][cyclopentadienyl]  (1) in which: M is Pd, Nb, or Ni; on a surface of a porous supporter and then passing a reductive gas through the opposite side of said porous supporter to form a metal film at room temperature is discussed.

摘要翻译： 一种制备复合无机膜的方法，包括沉积根据式（1）的有机金属化合物或其混合物：其中：M是Pd，Nb或Ni; 在多孔载体的表面上，然后使还原气体通过所述多孔载体的相对侧，以在室温下形成金属膜。