公开(公告)号：US20050048789A1

公开(公告)日：2005-03-03

申请号：US10655231

申请日：2003-09-03

申请人： Walter Merry ,  Cecilia Mak ,  Kam Law

发明人： Walter Merry ,  Cecilia Mak ,  Kam Law

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/30655 ,  H01L21/31116

摘要： A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.

摘要翻译： 一种蚀刻在衬底上形成的包括一系列处理循环的电介质层的方法，其中每个循环包括沉积非活性聚合物膜，激活该膜以蚀刻该结构并除去该膜的步骤。 在一个实施方案中，该方法使用碳氟化合物气体来形成聚合物膜和衬底偏压以激活这种膜。

公开(公告)号：US20060252278A1

公开(公告)日：2006-11-09

申请号：US11483034

申请日：2006-07-07

申请人： Cecilia Mak ,  Kam Law

发明人： Cecilia Mak ,  Kam Law

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3124 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/31695 ,  H01L2221/1047

摘要： A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon from the codeposit to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition. After codeposition, the codeposit is exposed to a selective silicon removal reagent that can preferentially remove the silicon in the codeposit, leaving behind a porous structure. Repeated execution of the codeposition and the selective silicon removal steps build up thickness of the porous film. A porous film with highly uniform small pores and a desired porosity profile can be obtained with this method. This method is advantageous for forming a broad range of low-k dielectrics for semiconductor integrated circuit fabrication. The general method is also advantageous for forming other porous films for other applications.

摘要翻译： 提供了一种用于沉积多孔二氧化硅和掺杂二氧化硅膜的方法。 该方法使用循环方案，其中每个循环包括首先将二氧化硅与硅共沉积，然后从共沉积物中选择性除去硅以形成多孔结构。 在优选的实施方案中，共沉积通过等离子体增强化学气相沉积进行。 共沉积后，共沉积物暴露于选择性硅去除剂，其可优先除去共沉积物中的硅，留下多孔结构。 重复执行共沉积和选择性硅去除步骤建立了多孔膜的厚度。 使用该方法可以获得具有高度均匀的小孔和所需孔隙率分布的多孔膜。 该方法有利于形成用于半导体集成电路制造的宽范围的低k电介质。 一般方法对于形成用于其它应用的其它多孔膜也是有利的。

公开(公告)号：US20060040507A1

公开(公告)日：2006-02-23

申请号：US10920602

申请日：2004-08-17

申请人： Cecilia Mak ,  Kam Law

发明人： Cecilia Mak ,  Kam Law

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3124 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/31695 ,  H01L2221/1047

摘要： A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition. The reagent feed stream comprises a mixture of codeposition reagents and a selective silicon removal reagent. RF power modulation is used to control the codeposition and the selective silicon removal steps with the later proceeds whenever the RF power is turned off or reduced to a low level. A porous film with highly uniform small pores and a desired porosity profile can be obtained with this method. This method is advantageous for forming a broad range of low-k dielectrics for semiconductor integrated circuit fabrication. The method is also advantageous for forming other porous films for other applications.

公开(公告)号：US20050220984A1

公开(公告)日：2005-10-06

申请号：US10817611

申请日：2004-04-02

申请人： Sheng Sun ,  Cecilia Mak ,  Kam Law

发明人： Sheng Sun ,  Cecilia Mak ,  Kam Law

IPC分类号： C23C4/12 ,  C23C8/36 ,  C23C16/52 ,  G02B6/132 ,  H01J37/32 ,  H01L21/66 ,  B05D1/00

CPC分类号： C23C4/12 ,  C23C4/134 ,  C23C8/36 ,  C23C16/52 ,  G02B6/132 ,  H01J37/32935 ,  H01J37/3299

摘要： Methods and systems are provided for processing a film over a substrate in a process chamber using plasma deposition. A plasma is formed in the process chamber and a process gas mixture suitable for processing the film is flowed into the process chamber under a set of process conditions. The process gas mixture may include a silicon-containing gas and an oxygen-containing gas to deposit a silicate glass, which may in some instances also be doped to obtain specifically desired optical properties. A parameter is monitored during processing of the film so that the process conditions may be changed in accordance with a correlation among a value of the parameter, an optical property of the film, and the process conditions.

摘要翻译： 提供了用于使用等离子体沉积在处理室中的衬底上处理膜的方法和系统。 在处理室中形成等离子体，并且适合于处理膜的处理气体混合物在一组工艺条件下流入处理室。 工艺气体混合物可以包括含硅气体和含氧气体以沉积硅酸盐玻璃，其在一些情况下也可以被掺杂以获得特别期望的光学性质。 在膜的处理期间监测参数，使得可以根据参数值，膜的光学性质和工艺条件之间的相关性来改变工艺条件。

公开(公告)号：US20050115921A1

公开(公告)日：2005-06-02

申请号：US09734950

申请日：2000-12-11

申请人： Cecilia Mak ,  John White ,  Kam Law ,  Dan Maydan

发明人： Cecilia Mak ,  John White ,  Kam Law ,  Dan Maydan

IPC分类号： G02B6/12 ,  G02B6/13 ,  G02B6/132 ,  B29D11/00

CPC分类号： G02B6/12004 ,  G02B6/13 ,  G02B6/132

摘要： In one aspect, the invention provides methods and apparatus for forming optical devices on large area substrates. The large area substrates are preferably made of quartz, silica or fused silica. The large area substrates enable larger optical devices to be formed on a single die. In another aspect, the invention provides methods and apparatus for forming integrated optical devices on large area substrates, such as quartz, silica or fused silica substrates. In another aspect, the invention provides methods and apparatus for forming optical devices using damascene techniques on large area substrates or silicon substrates. In another aspect, methods for forming optical devices by bonding an upper cladding layer on a lower cladding and a core is provided.

摘要翻译： 一方面，本发明提供了用于在大面积基板上形成光学装置的方法和装置。 大面积基板优选由石英，二氧化硅或熔融二氧化硅制成。 大面积基板使得能够在单个管芯上形成更大的光学器件。 另一方面，本发明提供了用于在大面积衬底（例如石英，二氧化硅或熔融二氧化硅衬底）上形成集成光学器件的方法和装置。 在另一方面，本发明提供了使用大面积衬底或硅衬底上的镶嵌技术形成光学器件的方法和装置。 在另一方面，提供了通过将下包层和芯上的上包层结合来形成光器件的方法。