Materials for use in programmed material consolidation processes
    7.
    发明申请
    Materials for use in programmed material consolidation processes 审中-公开
    用于程序化材料合并流程的材料

    公开(公告)号:US20060008739A1

    公开(公告)日:2006-01-12

    申请号:US11216938

    申请日:2005-08-31

    IPC分类号: G03C1/00

    摘要: Materials for use in programmed material consolidation processes, such as stereolithography, include a selectively consolidatable material and a filler. The filler may be included to optimize one or more physical properties of the material. The material is both selectively consolidatable and includes the desired physical property. Examples of physical properties that may optimized in a selectively consolidatable compound by mixing a filler material with a selectively consolidatable material include, without limitation, coefficient of thermal expansion, rigidity, fracture toughness, thermal stability, and strength.

    摘要翻译: 用于程序化材料固结方法(例如立体光刻)的材料包括可选择的可固结材料和填料。 可以包括填料以优化材料的一种或多种物理性质。 该材料既可选择性地整合,并且包括所需的物理性质。 通过将填充材料与可选择性地可固结的材料混合可以在可选择地可固化的化合物中优化的物理性质的实例包括但不限于热膨胀系数,刚性,断裂韧性,热稳定性和强度。

    Support structure for thinning semiconductor substrates and thinning methods employing the support structure
    10.
    发明申请
    Support structure for thinning semiconductor substrates and thinning methods employing the support structure 有权
    用于减薄半导体衬底的支撑结构和采用支撑结构的薄化方法

    公开(公告)号:US20050064681A1

    公开(公告)日:2005-03-24

    申请号:US10666742

    申请日:2003-09-19

    摘要: A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface. Assemblies that include the support structure and a semiconductor substrate are also within the scope of the present invention, as are methods for forming the support structures and thinning and post-thinning processes that include use of the support structures.

    摘要翻译: 在半导体衬底的薄化或后研磨以及后稀化处理期间与半导体衬底一起使用的支撑结构包括基本上沿半导体衬底的外周延伸并且围绕半导体衬底的外周延伸的部分,以使薄化半导体 基板具有刚性。 支撑结构可以被配置为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。 包括支撑结构和半导体衬底的组件也在本发明的范围内,形成支撑结构的方法和包括使用支撑结构的减薄和后变薄工艺也是如此。