摘要:
Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.
摘要:
Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.
摘要:
Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.
摘要:
Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.
摘要:
Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.
摘要:
Materials for use in programmed material consolidation processes, such as stereolithography, include a selectively consolidatable material and a filler. The filler may be included to optimize one or more physical properties of the material. The material is both selectively consolidatable and includes the desired physical property. Examples of physical properties that may optimized in a selectively consolidatable compound by mixing a filler material with a selectively consolidatable material include, without limitation, coefficient of thermal expansion, rigidity, fracture toughness, thermal stability, and strength.
摘要:
Methods for optimizing physical properties of selectively consolidatable materials, such as photoimageable materials, include mixing filler materials with the selectively consolidatable materials. The resulting compound has the desired physical property, as well as selective consolidatability. Examples of physical properties that may optimized in a selectively consolidatable compound by mixing a filler material with a selectively consolidatable material include, without limitation, coefficient of thermal expansion, rigidity, fracture toughness, thermal stability, and strength.
摘要:
A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.
摘要:
A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface. Assemblies that include the support structure and a semiconductor substrate are also within the scope of the present invention, as are methods for forming the support structures and thinning and post-thinning processes that include use of the support structures.
摘要:
A fabrication substrate for use in fabricating integrated circuits and other electronic devices includes a substrate that comprises semiconductor material, as well as a support structure on an active surface of the substrate. The support structure is located at or adjacent to an entire outer peripheral edge of the substrate. The support structure may be configured as a ring-like element or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.