Method for observing specimen and device therefor
    2.
    发明授权
    Method for observing specimen and device therefor 有权
    观察标本及其装置的方法

    公开(公告)号:US06756589B1

    公开(公告)日:2004-06-29

    申请号:US09743560

    申请日:2001-01-09

    IPC分类号: H01L2166

    摘要: During closer inspection with a local defect area being magnified, it is desirable to reduce image acquisition time by making the number of stage moves as few as possible so that a defect can be observed efficiently. To accomplish this, the invention offers a method of observing samples characterized by: acquiring a reference sample image not including any defect on a sample by capturing an image of the sample, based on the information on the defect developed on the sample and detected by an inspection apparatus; adjusting the position of the sample so that the defect will fall within the field of view of image capture, based on the above information; acquiring a defective sample image including the defect on the sample by capturing an image of the sample in the adjusted position; locating the defect on the defective sample image by comparing the reference sample image and the defective sample image; acquiring a magnified image of the defect by capturing a magnified view of the local area where the located defect exists within the field of view of image capture; and displaying the magnified image of the defect on a screen.

    摘要翻译: 在局部缺陷区域放大的仔细检查中,期望通过使台数移动尽可能少地减少图像获取时间,从而可以有效地观察到缺陷。 为了实现这一点,本发明提供了一种观察样本的方法,其特征在于:基于在样品上形成的缺陷的信息,通过采集样本的检测信息来获取样本上不包括任何缺陷的参考样本图像, 检验仪器; 基于上述信息,调整样本的位置使得缺陷落入图像捕获视野内; 通过在调整位置拍摄样本的图像来获取包含样本上的缺陷的缺陷样本图像; 通过比较参考样本图像和有缺陷的样本图像来定位缺陷样本图像上的缺陷; 通过在图像捕获视野内捕获定位缺陷的局部区域的放大视图来获取缺陷的放大图像; 并在屏幕上显示缺陷的放大图像。

    Method for analyzing circuit pattern defects and a system thereof
    3.
    发明授权
    Method for analyzing circuit pattern defects and a system thereof 失效
    电路图形缺陷分析方法及其系统

    公开(公告)号:US07352890B2

    公开(公告)日:2008-04-01

    申请号:US11356210

    申请日:2006-02-17

    IPC分类号: G06K9/00

    摘要: A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.

    摘要翻译: 一种用于分析电子电路图案缺陷的系统,包括:将结构缺陷的位置信息与电气故障的位置信息进行比较,并提取在结构缺陷和电气故障之间具有共同位置信息的证实缺陷; 基于预先存储的分类规则将提取的确证缺陷的图像分类为关键缺陷图像和非关键缺陷图像,该分类规则通过参考缺陷图像,缺陷位置信息和执行电子化的结果来定义关键和非关键缺陷 测试; 通过校正显示在屏幕上的分类缺陷图像的分类来修改预先存储的分类规则; 并对每个后续对象重复操作,其中对于被检查的每个当前对象,使用关于先前对象的经修改的预先存储的分类规则作为关于本对象的操作的预先存储的分类规则。

    Method for analyzing circuit pattern defects and a system thereof
    4.
    发明申请
    Method for analyzing circuit pattern defects and a system thereof 失效
    电路图形缺陷分析方法及其系统

    公开(公告)号:US20060140472A1

    公开(公告)日:2006-06-29

    申请号:US11356210

    申请日:2006-02-17

    IPC分类号: G06K9/00

    摘要: A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.

    摘要翻译: 一种用于分析电子电路图案缺陷的系统,包括:将结构缺陷的位置信息与电气故障的位置信息进行比较,并提取在结构缺陷和电气故障之间具有共同位置信息的证实缺陷; 基于预先存储的分类规则将提取的确证缺陷的图像分类为关键缺陷图像和非关键缺陷图像,该分类规则通过参考缺陷图像,缺陷位置信息和执行电子化的结果来定义关键和非关键缺陷 测试; 通过校正显示在屏幕上的分类缺陷图像的分类来修改预先存储的分类规则; 并对每个后续对象重复操作,其中对于被检查的每个当前对象,使用关于先前对象的经修改的预先存储的分类规则作为关于本对象的操作的预先存储的分类规则。

    Method and system for analyzing circuit pattern defects
    5.
    发明授权
    Method and system for analyzing circuit pattern defects 失效
    分析电路图形缺陷的方法和系统

    公开(公告)号:US07062081B2

    公开(公告)日:2006-06-13

    申请号:US09783604

    申请日:2001-02-15

    IPC分类号: G06K9/00

    摘要: In order to allow critical flaws in an inspected item to be determined early during a production process, the present invention includes the following steps: a step of detecting defects in a production process for the inspected item and storing defect positions; a step of collecting detailed defect information and storing the detailed information in association with defect positions; a step of storing positions at which flaws were generated based on a final inspection of the inspected item; a step of comparing defect positions with positions at which flaws were generated; and a step of classifying and displaying detailed information based on the comparison results.

    摘要翻译: 为了在生产过程中早期确定检查项目中的关键缺陷,本发明包括以下步骤:检测检查项目的生产过程中的缺陷并存储缺陷位置的步骤; 收集详细缺陷信息并存储与缺陷位置相关联的详细信息的步骤; 基于检查项目的最终检查来存储产生缺陷的位置的步骤; 将缺陷位置与产生缺陷的位置进行比较的步骤; 并根据比较结果对详细信息进行分类和显示。

    Sample dimension-measuring method and charged particle beam apparatus
    7.
    发明授权
    Sample dimension-measuring method and charged particle beam apparatus 有权
    样品尺寸测量方法和带电粒子束装置

    公开(公告)号:US07476856B2

    公开(公告)日:2009-01-13

    申请号:US10875509

    申请日:2004-06-25

    IPC分类号: G01N23/00 G01B11/10

    摘要: A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, the method and apparatus may execute the following steps: calculating an average of the dimensional values of a plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of the feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be determined precisely.

    摘要翻译: 提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。 例如,该方法和装置可以执行以下步骤:计算多个扫描的特征对象的维度值的平均值; 并且基于计算的平均值与照射光时获得的特征对象的尺寸值之间的差异来计算尺寸值的偏移。 可以精确地确定光学测量装置与扫描电子显微镜之间的测量值之间的偏移。