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公开(公告)号：US06667553B2
公开(公告)日：2003-12-23
申请号：US09990000
申请日：2001-11-21
IPC分类号： H01L2348
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/31633
摘要： This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.
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2.发明授权公开(公告)号：US06593248B2
公开(公告)日：2003-07-15
申请号：US10103331
申请日：2002-03-20
申请人： Mark Jon Loboda , Byung Keun Hwang
发明人： Mark Jon Loboda , Byung Keun Hwang
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/30 , C23C16/325 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/3122 , H01L21/31629 , H01L21/31633
摘要： A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.
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公开(公告)号：US07189664B2
公开(公告)日：2007-03-13
申请号：US10543672
申请日：2004-01-26
申请人： Mark Jon Loboda , Byung Keun Hwang
发明人： Mark Jon Loboda , Byung Keun Hwang
IPC分类号： H01L21/469
CPC分类号： C23C16/30
摘要： A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
摘要翻译： 一种具有低介电常数的氢化硅碳化氢（H：SiOC）薄膜的制造方法。 该方法包括使用等离子体辅助聚合反应含有至少一个应变硅键的环状硅烷化合物以制备膜。 所得膜可用于形成半导体器件。
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公开(公告)号：US5818071A
公开(公告)日：1998-10-06
申请号：US382701
申请日：1995-02-02
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532 , H05K1/09 , H01L31/0312 , H01L29/04 , H01L31/036 , H01L31/0376
CPC分类号： H01L23/5329 , H01L2924/0002 , H01L2924/3011
摘要： Disclosed is the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material. This advancement allows for the use of low resistivity metals and low dielectric constant dielectric layers in integrated circuits and wiring boards.
摘要翻译： 公开了使用碳化硅作为阻挡层来防止金属原子在被介电材料分隔的相邻导体之间的扩散。 这种进步允许在集成电路和布线板中使用低电阻率金属和低介电常数电介质层。
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公开(公告)号：US09187602B2
公开(公告)日：2015-11-17
申请号：US12526521
申请日：2008-02-04
摘要： Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared.
摘要翻译： 描述了杂质硅氧烷聚合物。 异质元素硅氧烷聚合物可以具有线性结构，环状结构，支链结构和三维网状结构及其组合。 可以使用源自热固性有机硅聚合物的固化化学品固化异硅氧烷聚合物，并且可以制备凝胶，涂层，斑块，部件和其它有用的制品。
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6.发明授权Method for producing hydrogenated silicon oxycarbide films having low dielectric constant 有权制备具有低介电常数的氢化硅碳化硅薄膜的方法公开(公告)号：US06593655B1
公开(公告)日：2003-07-15
申请号：US09639410
申请日：2000-08-14
IPC分类号： H01L2348
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/31633
摘要： This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
摘要翻译： 本发明涉及具有低介电常数的氢化硅氧化碳（H：SiOC）薄膜的制造方法。 该方法包括使用等离子体增强或臭氧辅助化学气相沉积在受控的氧环境中使含甲基的硅烷反应以产生膜。 所得膜可用于半导体器件的形成并具有3.6或更小的介电常数。
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公开(公告)号：US20100041851A1
公开(公告)日：2010-02-18
申请号：US12526521
申请日：2008-02-04
IPC分类号： C08G79/00
摘要： Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared.
摘要翻译： 描述了杂质硅氧烷聚合物。 异质元素硅氧烷聚合物可以具有线性结构，环状结构，支链结构和三维网状结构及其组合。 可以使用源自热固性有机硅聚合物的固化化学品固化异硅氧烷聚合物，并且可以制备凝胶，涂层，斑块，部件和其它有用的制品。
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公开(公告)号：US06268262B1
公开(公告)日：2001-07-31
申请号：US08999951
申请日：1997-08-11
申请人： Mark Jon Loboda
发明人： Mark Jon Loboda
IPC分类号： H01L2900
CPC分类号： H01L23/5329 , H01L21/7682 , H01L23/4821 , H01L23/5381 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method for making an air bridge in an electronic device. This method uses amorphous silicon carbide to protect electrical conductors in the device during formation of the bridge. The silicon carbide also provides hermetic and physical protection to the device after formation.
摘要翻译： 公开了一种在电子设备中制造空气桥的方法。 该方法使用非晶碳化硅来保护桥梁形成期间设备中的电导体。 碳化硅还可在形成后为器件提供气密和物理保护。
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9.发明授权
公开(公告)号：US6159871A
公开(公告)日：2000-12-12
申请号：US86811
申请日：1998-05-29
IPC分类号： C01B31/36 , C23C16/30 , C23C16/42 , H01B3/02 , H01L21/285 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/31633
摘要： This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
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公开(公告)号：US5863595A
公开(公告)日：1999-01-26
申请号：US780946
申请日：1997-01-10
申请人： Robert Charles Camilletti , Diana Kay Deese , Loren Andrew Haluska , Mark Jon Loboda , Keith Winton Michael
发明人： Robert Charles Camilletti , Diana Kay Deese , Loren Andrew Haluska , Mark Jon Loboda , Keith Winton Michael
IPC分类号： C23C24/08 , C04B41/50 , C04B41/52 , C04B41/87 , C04B41/89 , C23C26/00 , H01L21/316 , H01L21/48 , H01L23/498 , B05D5/12
CPC分类号： H01L27/0203 , C04B41/009 , C04B41/5035 , C04B41/52 , C04B41/87 , C04B41/89 , H01L21/316 , H01L21/481 , H01L23/291 , H01L23/49894 , H01L23/573 , C04B2111/00844 , H01L2924/0002
摘要： This invention pertains to a method of forming a coating on an electronic substrate and to the electronic substrates coated thereby. The method comprises applying on the electronic substrate a coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH).sub.3 where R is selected from the group consisting of an alkyl radical having from 1 to 3 carbon atoms, the vinyl radical, the 3,3,3-trifluoropropyl radical, the gamma-glycidoxypropyl radical and the gamma-methacryloxypropyl radical with the provision that at least 70% of the R radicals are methyl, and thereafter ceramifying the coating by heating at a temperature of about 200.degree. C. to 1000.degree. C. The use of the coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH).sub.3 allows for the formation of thick planarizing coatings on the electronic substrate.
摘要翻译： 本发明涉及在电子基板上形成涂层的方法以及由此涂覆的电子基板。 该方法包括在电子基材上涂覆涂料组合物，该涂料组合物包含胶体二氧化硅的链烷醇水溶液和RSi（OH）3的部分缩合物，其中R选自具有1至3个碳原子的烷基，乙烯基 自由基，3,3,3-三氟丙基，γ-环氧丙氧基丙基和γ-甲基丙烯酰氧基丙基，其条件是至少70％的R基团是甲基，然后通过在约1℃的温度下加热使涂层陶瓷化 使用包含胶体二氧化硅的链烷醇水溶液和RSi（OH）3的部分缩合物的涂料组合物允许在电子基材上形成厚的平坦化涂层。
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