摘要:
Using an imaging system in relation to a plurality of material layers in an initial alignment state is provided, a first of the plurality of material layers at least partially obscuring a second of the plurality of material layers in the initial alignment state. The first material layer is moved from a first position corresponding to the initial alignment state to a second position out of a field of view of the imaging system, and a first image of the second material layer is stored. The first material layer is moved back the first position to restore the initial alignment state. A second image of the first material layer is acquired. The second image and the stored first image are processed to determine the initial alignment state.
摘要:
An imprint apparatus and method employ an effective pressure in imprint lithography. The imprint apparatus includes a compressible chamber that encloses an imprint mold having a mold pattern and a sample to be imprinted. The chamber is compressed to imprint the mold pattern on the sample. The mold is pressed against the sample with the effective pressure. The effective pressure is controlled by a selected ratio of a cavity area of the chamber to a contact area between the mold and the sample.
摘要:
A contact lithography apparatus, system and method use a hydraulic deformation to facilitate pattern transfer. The apparatus, system and method include a spacer that provides a spaced apart proximal orientation of lithographic elements, and a hydraulic force member that provides the hydraulic deformation. One or more of the lithographic elements and the spacer is deformable, such that hydraulic deformation thereof facilitates the pattern transfer.
摘要:
A displacement estimation system comprising a data acquisition system and a processing system is provided. The data acquisition system is configured to capture a first frame from a first substrate including a first pattern and a second substrate including a second pattern at a first time and capture a second frame from a third substrate including a third pattern and a fourth substrate including a fourth pattern at a second time subsequent to the first time. The first pattern and the third pattern are substantially identical, and the second pattern and the fourth pattern are substantially identical. The processing system is configured to calculate a first displacement between the first pattern and the third pattern using the first frame and the second frame and calculate a second displacement between the second pattern and the fourth pattern using the first frame and the second frame.
摘要:
An imprint apparatus and method employ an effective pressure in imprint lithography. The imprint apparatus includes a compressible chamber that encloses an imprint mold having a mold pattern and a sample to be imprinted. The chamber is compressed to imprint the mold pattern on the sample. The mold is pressed against the sample with the effective pressure. The effective pressure is controlled by a selected ratio of a cavity area of the chamber to a contact area between the mold and the sample.
摘要:
A contact lithography apparatus, system and method use a hydraulic deformation to facilitate pattern transfer. The apparatus, system and method include a spacer that provides a spaced apart proximal orientation of lithographic elements, and a hydraulic force member that provides the hydraulic deformation. One or more of the lithographic elements and the spacer is deformable, such that hydraulic deformation thereof facilitates the pattern transfer.
摘要:
A method and system are disclosed for aligning a lithography template having a pattern with a substrate in preparation for transferring the pattern to a surface of the substrate. The system includes an optical imaging system adapted to image a first alignment structure formed on a top surface of the template using light of a first wavelength and a second alignment structure formed on a top surface of the substrate using light of a second wavelength.
摘要:
Lithography tools and substrates are aligned by generating geometric interference patterns using optical gratings associated with the lithography tools and substrates. In some embodiments, the relative position between a substrate and lithography tool is adjusted to cause at least one geometric shape to have a predetermined size or shape representing acceptable alignment. In additional embodiments, Moiré patterns that exhibit varying sensitivity are used to align substrates and lithography tools. Furthermore, lithography tools and substrates are aligned by causing radiation to interact with optical gratings positioned between the lithography tools and substrates. Lithography tools include an optical grating configured to generate a portion of an interference pattern that exhibits a sensitivity that increases as the relative position between the tools and a substrate moves towards a predetermined alignment position.
摘要:
Using an imaging system in relation to a plurality of material layers in an initial alignment state is provided, a first of the plurality of material layers at least partially obscuring a second of the plurality of material layers in the initial alignment state. The first material layer is moved from a first position corresponding to the initial alignment state to a second position out of a field of view of the imaging system, and a first image of the second material layer is stored. The first material layer is moved back the first position to restore the initial alignment state. A second image of the first material layer is acquired. The second image and the stored first image are processed to determine the initial alignment state.
摘要:
A displacement estimation system including a data acquisition system and a processing system is provided. The data acquisition system is configured to capture a first frame from a first substrate including a first pattern and a second substrate including a second pattern at a first time and capture a second frame from a third substrate including a third pattern and a fourth substrate including a fourth pattern at a second time subsequent to the first time. The first pattern and the third pattern are substantially identical, and the second pattern and the fourth pattern are substantially identical. The processing system is configured to calculate a first displacement between the first pattern and the third pattern using the first frame and the second frame and calculate a second displacement between the second pattern and the fourth pattern using the first frame and the second frame.