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    VERTICAL JUNCTION SOLAR CELL STRUCTURE AND METHOD
    1.
    发明申请
    VERTICAL JUNCTION SOLAR CELL STRUCTURE AND METHOD 审中-公开
    垂直结型太阳能电池结构及方法

    公开(公告)号：US20130220406A1

    公开(公告)日：2013-08-29

    申请号：US13406087

    申请日：2012-02-27

    Applicant: Stephen DAY ,  James Andrew Robert DIMMOCK ,  Matthias KAUER

    Inventor： Stephen DAY ,  James Andrew Robert DIMMOCK ,  Matthias KAUER

    IPC: H01L31/0352 ,  H01L31/18 ,  B82Y99/00

    CPC classification number: H01L31/035281 ,  B82Y30/00 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    Abstract: A non-close-packed vertical junction photovoltaic device includes a substrate, a two-dimensional array of elongate nanostructures extending substantially perpendicularly from a surface of the substrate, and a thin film solar cell disposed over the nanostructures such that the thin film solar cell substantially conforms to the topography of the nanostructures. An average separation of nearest neighbor solar cell coated nanostructures is greater than zero and less than a vacuum wavelength of light corresponding to a band gap of absorption. The thin film solar cell may include an active region that conforms to the elongate nanostructures, a first electrode that conforms to a surface of the active region, and a second electrode. A separation of opposing outer surfaces of the first electrode extending along adjacent elongate nanostructures is greater than zero and less than the vacuum wavelength of the light corresponding to the band gap of the active region.

    Abstract translation: 非紧密堆积的垂直结光伏器件包括衬底，从衬底的表面基本上垂直延伸的细长纳米结构的二维阵列，以及设置在纳米结构上的薄膜太阳能电池，使得薄膜太阳能电池基本上 符合纳米结构的形貌。 最近相邻的太阳能电池涂覆的纳米结构的平均分离大于零并且小于对应于吸收带隙的光的真空波长。 薄膜太阳能电池可以包括符合细长纳米结构的有源区，符合有源区的表面的第一电极和第二电极。 沿着相邻的细长纳米结构延伸的第一电极的相对的外表面的分离大于零并且小于对应于有源区的带隙的光的真空波长。

    SEMICONDUCTOR LAYER STRUCTURE
    2.
    发明申请
    SEMICONDUCTOR LAYER STRUCTURE 审中-公开
    半导体层结构

    公开(公告)号：US20100265976A1

    公开(公告)日：2010-10-21

    申请号：US12741217

    申请日：2008-10-21

    Applicant: Valerie Bousquet ,  Matthias Kauer ,  Wei-Sin Tan ,  Jonathan Heffernan ,  Koji Takahashi

    Inventor： Valerie Bousquet ,  Matthias Kauer ,  Wei-Sin Tan ,  Jonathan Heffernan ,  Koji Takahashi

    IPC: H01S5/323 ,  H01L33/30 ,  H01L21/20

    CPC classification number: H01L21/0254 ,  H01L21/02389 ,  H01L21/02631 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/2231 ,  H01S5/32341

    Abstract: A III-nitride compound device which has a layer of AlInN (7) having a non-zero In content, for example acting as a current blocking layer, is described. The layer of AlInN (7) has at least aperture defined therein. The layer of AlInN (7) is grown with a small lattice-mismatch with an underlying layer, for example an underlying GaN layer, thus preventing added crystal strain in the device. By using optimised growth conditions the resistivity of the AlInN is made higher than 102 ohm·cm thus preventing current flow when used as a current blocking layer in a multilayer semiconductor device with layers having smaller resistivity. As a consequence, when the AlInN layer has an opening and is placed in a laser diode device, the resistance of the device is lower resulting in a device with better performance.

    Abstract translation: 描述了具有例如用作电流阻挡层的非零In含量的AlInN（7）层的III族氮化物复合器件。 AlInN（7）的层至少具有限定在其中的孔。 AlInN（7）的层与下层（例如下面的GaN层）以较小的晶格失配生长，从而防止在器件中增加晶体应变。 通过使用优化的生长条件，使AlInN的电阻率高于102欧姆·厘米，从而防止在具有较小电阻率层的多层半导体器件中用作电流阻挡层时的电流流动。 结果，当AlInN层具有开口并且放置在激光二极管器件中时，器件的电阻较低，导致具有更好性能的器件。

    Semiconductor light-emitting device and a method of manufacture thereof
    3.
    发明申请
    Semiconductor light-emitting device and a method of manufacture thereof 失效
    半导体发光器件及其制造方法

    公开(公告)号：US20050249253A1

    公开(公告)日：2005-11-10

    申请号：US11030791

    申请日：2005-01-07

    Applicant: Katherine Johnson ,  Stewart Hooper ,  Valerie Bousquet ,  Matthias Kauer ,  Jonathan Heffernan

    Inventor： Katherine Johnson ,  Stewart Hooper ,  Valerie Bousquet ,  Matthias Kauer ,  Jonathan Heffernan

    IPC: H01S5/042 ,  H01L21/00 ,  H01L33/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323

    CPC classification number: H01S5/227 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/2215 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/32341 ,  H01S2301/173

    Abstract: A semiconductor light-emitting device and a method of manufacture thereof A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminium-containing cladding region or an aluminium-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5). The or each exposed portion of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5) Is then oxidised to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).

    Abstract translation: 一种半导体发光器件及其制造方法。一种制造半导体发光器件的方法包括：选择性地蚀刻在氮化物材料体系中制造的半导体层结构（16），并且包括含铝包层区域或铝 - （5）。 蚀刻步骤形成台面（17），并且还暴露含铝包层区域或含铝光导区域（5）的一个或多个部分。 然后，含铝包覆区域或含铝光导区域（5）的暴露部分或含铝的光导引区域（5）被氧化以形成横向邻近并从台面横向延伸的电流阻挡层（18）。 当沉积导电接触层（11）时，电流阻挡层（18）将防止接触层（11）与缓冲层（3）直接接触。

    Growth of a semiconductor layer structure
    5.
    发明授权
    Growth of a semiconductor layer structure 失效
    半导体层结构的生长

    公开(公告)号：US07504322B2

    公开(公告)日：2009-03-17

    申请号：US11558972

    申请日：2006-11-13

    Applicant: Matthias Kauer

    Inventor： Matthias Kauer

    IPC: H01L21/84

    CPC classification number: H01L33/0095 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L33/105 ,  H01L33/145 ,  H01L33/305 ,  H01L33/465 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/2226 ,  H01S5/32341

    Abstract: A method of growing a semiconductor layer structure comprises growing a first semiconductor layer and incorporating hydrogen into the first semiconductor layer. One or more further semiconductor layers are then grown over the first semiconductor layer to form a semiconductor layer structure. A selected portion of the first semiconductor layer is then annealed so as to change the electrical resistance of the selected portion of the first semiconductor layer. The electrical resistance of the one or more further semiconductor layers that have been grown over the first semiconductor layer is not significantly changed by the annealing step. The invention may be used, for example, to create a current aperture in a semiconductor layer within a semiconductor layer structure.

    Abstract translation: 生长半导体层结构的方法包括生长第一半导体层并将氢掺入第一半导体层。 然后在第一半导体层上生长一个或多个其它半导体层以形成半导体层结构。 然后对第一半导体层的选定部分进行退火，以改变第一半导体层的选定部分的电阻。 通过退火步骤，已经在第一半导体层上生长的一个或多个其它半导体层的电阻没有显着变化。 本发明可以用于例如在半导体层结构内的半导体层中形成电流孔。

    GROWTH OF A SEMICONDUCTOR LAYER STRUCTURE
    6.
    发明申请
    GROWTH OF A SEMICONDUCTOR LAYER STRUCTURE 失效
    半导体层结构的增长

    公开(公告)号：US20070108452A1

    公开(公告)日：2007-05-17

    申请号：US11558972

    申请日：2006-11-13

    Applicant: Matthias KAUER

    Inventor： Matthias KAUER

    IPC: H01L33/00

    CPC classification number: H01L33/0095 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L33/105 ,  H01L33/145 ,  H01L33/305 ,  H01L33/465 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/2226 ,  H01S5/32341

    Abstract: A method of growing a semiconductor layer structure comprises growing a first semiconductor layer and incorporating hydrogen into the first semiconductor layer. One or more further semiconductor layers are then grown over the first semiconductor layer to form a semiconductor layer structure. A selected portion of the first semiconductor layer is then annealed so as to change the electrical resistance of the selected portion of the first semiconductor layer. The electrical resistance of the one or more further semiconductor layers that have been grown over the first semiconductor layer is not significantly changed by the annealing step. The invention may be used, for example, to create a current aperture in a semiconductor layer within a semiconductor layer structure.

    Abstract translation: 生长半导体层结构的方法包括生长第一半导体层并将氢掺入第一半导体层。 然后在第一半导体层上生长一个或多个其它半导体层以形成半导体层结构。 然后对第一半导体层的选定部分进行退火，以改变第一半导体层的选定部分的电阻。 通过退火步骤，已经在第一半导体层上生长的一个或多个其它半导体层的电阻没有显着变化。 本发明可以用于例如在半导体层结构内的半导体层中形成电流孔。

    MECHANICAL STACKING STRUCTURE FOR MULTI-JUNCTION PHOTOVOLTAIC DEVICES AND METHOD OF MAKING
    8.
    发明申请
    MECHANICAL STACKING STRUCTURE FOR MULTI-JUNCTION PHOTOVOLTAIC DEVICES AND METHOD OF MAKING 审中-公开
    用于多功能光伏器件的机械堆叠结构及其制造方法

    公开(公告)号：US20120180854A1

    公开(公告)日：2012-07-19

    申请号：US13008425

    申请日：2011-01-18

    Applicant: Mathieu BELLANGER ,  Stephen Day ,  Matthias Kauer

    Inventor： Mathieu BELLANGER ,  Stephen Day ,  Matthias Kauer

    IPC: H01L31/06 ,  H01L31/0232

    CPC classification number: H01L31/0687 ,  H01L31/043 ,  Y02E10/52 ,  Y02E10/544

    Abstract: A multi-junction photovoltaic structure which includes a first photovoltaic sub-cell having at least one junction, a second photovoltaic sub-cell having at least one junction and having a band gap smaller than a smallest band gap of the first photovoltaic sub-cell, and an interlayer that provides optical coupling between the first and second photovoltaic cells, wherein the interlayer has a physical thickness substantially similar or less than a vacuum wavelength of light corresponding to a smallest band gap of the second photovoltaic sub-cell.

    Abstract translation: 一种多结光伏结构，其包括具有至少一个结的第一光伏子电池，具有至少一个结的具有小于第一光伏子电池的最小带隙的带隙的第二光伏子电池， 以及在所述第一和第二光伏电池之间提供光耦合的中间层，其中所述中间层具有与第二光伏子电池的最小带隙相对应的光的真空波长基本相似或小于的物理厚度。

    Manufacture of a semiconductor light-emitting device
    10.
    发明申请
    Manufacture of a semiconductor light-emitting device 审中-公开
    制造半导体发光装置

    公开(公告)号：US20050227404A1

    公开(公告)日：2005-10-13

    申请号：US11082586

    申请日：2005-03-17

    Applicant: Katherine Johnson ,  Stewart Hooper ,  Valerie Bousquet ,  Matthias Kauer ,  Jonathan Heffernan

    Inventor： Katherine Johnson ,  Stewart Hooper ,  Valerie Bousquet ,  Matthias Kauer ,  Jonathan Heffernan

    IPC: H01L21/461 ,  H01L33/36

    CPC classification number: H01L33/36 ,  H01L2933/0016

    Abstract: A method of manufacturing a semiconductor light-emitting device is provided. The method includes the step of depositing an electrically conductive material on one or more selected portions of the surface of a semiconductor wafer including a substrate and a layer structure, the layer structure having at least a first semiconductor layer of a first conductivity type and a second semiconductor conductivity layer of a second conductivity type different from the first conductivity type, the first layer being between the second layer and the substrate, such that the electrically conductive material forms a contact to the first semiconductor layer. The method further includes the step of dicing the wafer to form a plurality of light-emitting devices, each light-emitting device having a respective part of the electrically conductive material.

    Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括在包括衬底和层结构的半导体晶片的表面的一个或多个选定部分上沉积导电材料的步骤，该层结构具有至少第一导电类型的第一半导体层和第二导电类型的第二半导体层 不同于第一导电类型的第二导电类型的半导体导电层，第一层在第二层和衬底之间，使得导电材料与第一半导体层形成接触。 该方法还包括切割晶片以形成多个发光器件的步骤，每个发光器件具有导电材料的相应部分。

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