Abstract:
A method for manufacturing light-emitting diode (LED) first provides a substrate, then a protrusive patterned layer is formed on the substrate. The protrusive patterned layer exposes portions of the substrate, and the exposed portions are defined as a plurality of exposed regions. Next, a plurality of island semiconductor multi-layer is individually formed in each exposed region of the substrate.
Abstract:
A light-emitting diode (LED) module includes a plurality of LED units and a converter having a first side. The LED units respectively include a circuit board having a second side perpendicular to the first side and a third side parallel to the first side, a plurality of LEDs positioned on the circuit board, and a connector positioned on the second side proximal to the converter. The LED module further includes a plurality of flexible flat cables (FFCs) used to electrically connect the connectors to the converter, respectively.
Abstract:
A direct type backlight module including a frame, a plurality of light sources, an optical plate and an upper frame is provided. The frame includes a bottom frame and a side frame extending upward from the edge of the bottom frame. The light sources are disposed on the bottom frame, and the optical plate is disposed on the side frame above the light sources. The frame and the upper frame are assembled, wherein the optical plate is located between the upper frame and the frame. The upper frame has at lease one protrusion located above the optical plate and protruding to the optical plate. Therefore, the deformation of the optical plate can be reduced.
Abstract:
A back light module includes a frame, multiple light sources and an optical film. The frame has a bottom and several laterals. The bottom having multiple holes is connected with the laterals. The light sources correspond to the holes, respectively, and are fixed inside the frame. The optical film is disposed on the frame and above the light sources.
Abstract:
A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.
Abstract:
A method for fabricating a ceramic device is provided. A green sheet is adhered on an adhesive film. A photoresist film is then formed on the green sheet. A photolithographic process is carried out to form circuit trenches in the photoresist film. The circuit trenches are filled with metal paste, thereby forming a circuit pattern. The photoresist film is then removed.
Abstract:
A light-emitting diode (LED) module includes a plurality of LED units and a converter having a first side. The LED units respectively include a circuit board having a second side perpendicular to the first side and a third side parallel to the first side, a plurality of LEDs positioned on the circuit board, and a connector positioned on the second side proximal to the converter. The LED module further includes a plurality of flexible flat cables (FFCs) used to electrically connect the connectors to the converter, respectively.
Abstract:
A direct-type backlight module is disclosed, which includes a frame, at least one lamp support structure, at least one lamp and a diffusion plate. The frame has a bottom plate, and at least one opening is disposed in the bottom plate. The lamp support structure including a base and at least one holding and fixing member is fixed in the opening, wherein the base is disposed outside the bottom plate of the frame, and the holding and fixing member is disposed on the base and through the opening. The holding and fixing member has a lamp holding portion and a fixing portion, wherein the fixing portion is fixed in the opening, and the lamp holding portion is suitable for holding the lamp. The diffusion plate is disposed above the lamp.
Abstract:
A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.
Abstract:
A backlight module includes a housing and a plurality of U-type lamps and a plurality of straight-type lamps. The U-type lamps and the straight-type lamps are arranged in an alternate way so that the pitches between the U-type lamps and the straight-type lamps may be various to provide a variation of brightness of the backlight module.